JPH02181117A - Production of liquid crystal panel - Google Patents
Production of liquid crystal panelInfo
- Publication number
- JPH02181117A JPH02181117A JP28238089A JP28238089A JPH02181117A JP H02181117 A JPH02181117 A JP H02181117A JP 28238089 A JP28238089 A JP 28238089A JP 28238089 A JP28238089 A JP 28238089A JP H02181117 A JPH02181117 A JP H02181117A
- Authority
- JP
- Japan
- Prior art keywords
- liquid crystal
- impurities
- elution
- liquid
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 43
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 239000011521 glass Substances 0.000 claims abstract description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 11
- 239000010703 silicon Substances 0.000 claims abstract description 11
- 238000000576 coating method Methods 0.000 claims abstract description 9
- 239000007788 liquid Substances 0.000 claims abstract description 8
- 239000011248 coating agent Substances 0.000 claims abstract description 7
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000011574 phosphorus Substances 0.000 claims abstract description 6
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 25
- 239000000203 mixture Substances 0.000 claims description 7
- 238000005507 spraying Methods 0.000 claims description 5
- 239000000654 additive Substances 0.000 claims description 4
- 150000007522 mineralic acids Chemical class 0.000 claims description 4
- 238000007598 dipping method Methods 0.000 claims description 3
- 230000000996 additive effect Effects 0.000 claims description 2
- 238000007645 offset printing Methods 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 claims description 2
- 239000012535 impurity Substances 0.000 abstract description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 8
- 238000010828 elution Methods 0.000 abstract description 8
- 239000000126 substance Substances 0.000 abstract description 7
- 229910052681 coesite Inorganic materials 0.000 abstract description 4
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 4
- 239000000377 silicon dioxide Substances 0.000 abstract description 4
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 4
- 229910052682 stishovite Inorganic materials 0.000 abstract description 4
- 229910052905 tridymite Inorganic materials 0.000 abstract description 4
- 210000002858 crystal cell Anatomy 0.000 abstract description 3
- 238000010438 heat treatment Methods 0.000 abstract description 3
- 239000002253 acid Substances 0.000 abstract description 2
- 238000001354 calcination Methods 0.000 abstract 2
- 210000004027 cell Anatomy 0.000 description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 229910020489 SiO3 Inorganic materials 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 150000002484 inorganic compounds Chemical class 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- CMSGUKVDXXTJDQ-UHFFFAOYSA-N 4-(2-naphthalen-1-ylethylamino)-4-oxobutanoic acid Chemical compound C1=CC=C2C(CCNC(=O)CCC(=O)O)=CC=CC2=C1 CMSGUKVDXXTJDQ-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- -1 Cd are mixed in Chemical class 0.000 description 1
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical group OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- KXKVLQRXCPHEJC-UHFFFAOYSA-N acetic acid trimethyl ester Natural products COC(C)=O KXKVLQRXCPHEJC-UHFFFAOYSA-N 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 239000000052 vinegar Substances 0.000 description 1
- 235000021419 vinegar Nutrition 0.000 description 1
- 230000002747 voluntary effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野1
本発明は主として電界効果型の液晶パネルに用いるガラ
ス基板の製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application 1] The present invention mainly relates to a method of manufacturing a glass substrate used in a field-effect liquid crystal panel.
[従来の技術]
電界効果型液晶表示パネル用セルは、第1図に示すこと
(液晶分子をライス)〜配向さぜ、電界印加でその分子
を電界に対してほぼ平行にならしめ液晶の光学的変化を
生じさせるもので、このセルの上下に偏光鈑を合わせる
ことにより表示を可能ならしめている。この場合、液晶
は抵抗が高いために電流はほとんど流れずその結果消費
電力も小さい。また液晶中に流れる電流が少ないために
液晶の劣化がほとんどなくまた透明電極の劣化も抑える
ことができ全体的に非常に寿命の長い表示パネルが可能
になる。しかし通常の充分に精製された液晶中には液晶
を入れる容器からまた液晶をセル中に封入する際に不純
物の混入がある。更にパネルを長期間駆動してい(うち
透明電極中の不純物がイオンとして溶けこんだりする。[Prior art] A cell for a field-effect liquid crystal display panel is manufactured by the process shown in Fig. 1 (liquid crystal molecules are oriented) and then applied with an electric field to make the molecules almost parallel to the electric field. The display is made possible by placing polarizing plates above and below this cell. In this case, since the liquid crystal has a high resistance, almost no current flows, resulting in low power consumption. Furthermore, since the current flowing through the liquid crystal is small, there is almost no deterioration of the liquid crystal, and deterioration of the transparent electrodes can also be suppressed, making it possible to create a display panel with a very long life overall. However, impurities may be mixed into ordinary, sufficiently purified liquid crystals from the containers containing the liquid crystals or when the liquid crystals are sealed in cells. Furthermore, if the panel is operated for a long period of time, impurities in the transparent electrode may dissolve in the form of ions.
このために液晶の抵抗値が低(なり消費電力の増大、液
晶の劣化等の問題が生じて長寿命化、高信頼性を得るの
が困難となっている。For this reason, the resistance value of the liquid crystal is low (which causes problems such as increased power consumption and deterioration of the liquid crystal, making it difficult to achieve long life and high reliability).
従来上記した問題に対して第2図に示す様な対策がなさ
れている。この対策とは予めパター形成した透明電極の
表面をスパッタ蒸着法、真空蒸着法、CVD法等でSi
O□膜をオーバーコートして透明電極中の不純物がイオ
ンとして溶出するのを防止したり、或いは不可避的に流
れる電流のための透明電極の劣化を防止したりしている
。しかしスパッタ蒸着法、真空蒸着法、或いはCVD法
といったコーティング処理方法は量産性が悪く、更にま
た熟練した処理工程管理を必要としたり、或いは装置入
手のための莫大な投資を強いられ、パネル製造工程への
投入は困難となっている。Conventionally, countermeasures as shown in FIG. 2 have been taken to address the above-mentioned problems. This countermeasure is to apply Si to the surface of the transparent electrode, which has been patterned in advance, by sputtering, vacuum evaporation, CVD, etc.
The O□ film is overcoated to prevent impurities in the transparent electrode from being eluted as ions, or to prevent deterioration of the transparent electrode due to the inevitable flow of current. However, coating processing methods such as sputter evaporation, vacuum evaporation, and CVD are not suitable for mass production, and they also require skilled process management or require a huge investment to acquire equipment, which can slow down the panel manufacturing process. It has become difficult to invest in
以上の蒸着法の欠点をさけるために次に示すような改良
された技術も提案されている。即ち、特開昭52−13
0344号公報には、有機シリコンを溶質としてエタノ
ールを溶媒とする溶液を塗布焼成されることが開示され
ているが、リンの元素を無機酸の形で前記リンを810
2に対して1%〜10%添加されていないものであって
、単に絶縁膜のはがれ、クラックの発生防止ができるも
のである。また単純なSiO□膜ができるものである。In order to avoid the above drawbacks of the vapor deposition method, the following improved techniques have also been proposed. That is, JP-A-52-13
Publication No. 0344 discloses that a solution containing organic silicon as a solute and ethanol as a solvent is applied and fired.
It does not contain 1% to 10% of the amount added to 2, and can simply prevent peeling of the insulating film and the occurrence of cracks. Moreover, a simple SiO□ film can be formed.
次に特開昭50−131549号公報には珪素の有機溶
液により絶縁膜を形成する際にPPb、Cdなとの金属
を有機または無機の化合物の形で加える点は開示されて
いますが、その量が定められていないばかりか、絶縁膜
形成の目的が、こすりによる電極の配向処理の安定化あ
るいは長寿命化にあるものである。他には特開昭50−
131548号公報には、珪素の有機ン容液にP、Pb
、Cdなどの有機または無機化合物を混入することは開
示されていますが、その量は示されず、混入の目的は、
熱処理温度を下げるものである。Next, JP-A-50-131549 discloses that metals such as PPb and Cd are added in the form of organic or inorganic compounds when forming an insulating film using an organic solution of silicon. Not only is the amount not determined, but the purpose of forming the insulating film is to stabilize the electrode alignment process by rubbing or to extend the life of the electrode. Others include JP-A-1975-
No. 131548 discloses that P and Pb are added to an organic solution of silicon.
Although it is disclosed that organic or inorganic compounds such as Cd are mixed in, the amount is not indicated and the purpose of mixing is
This lowers the heat treatment temperature.
[発明が解決しようとする課題]
従来から公゛知となっている技術では、液晶セル基板か
ら液晶組成物中へ溶出する不純物を押えきれない問題点
があった。また蒸着技術を用いた絶縁膜形成法ではコス
トが大幅に上昇し、工業的に製造することは困難であっ
た。[Problems to be Solved by the Invention] Conventionally known techniques have the problem of not being able to suppress impurities eluted from the liquid crystal cell substrate into the liquid crystal composition. Furthermore, the method of forming an insulating film using vapor deposition technology significantly increases the cost, making it difficult to manufacture the film on an industrial scale.
本発明は以上の問題点を解決し、液晶セル基板から液晶
組成物中への不純物溶出を完全に押えられ、かつ安価に
製造できる製造方法を提供しようとするものである。The present invention aims to solve the above-mentioned problems and provide a manufacturing method that can completely suppress the elution of impurities from a liquid crystal cell substrate into a liquid crystal composition and can be manufactured at low cost.
[課題を解決するための手段]
本発明の液晶パネルの製造方法は、透明電極を上下対向
させて形成したガラスセルに液晶組成物をツイスト配向
させて封入し液晶の電気的光学的特性を利用して表示を
行なう液晶表示パネルの製造方法において、前記セルの
上下対向させたセル基板の表面を、ケイ素のオーガニッ
クソリューション(一般式;Si (OR) 4.R;
アルキル基)に、リンの元素を無機酸の形で前記リンを
SiO3に対して1%〜10%の割合で添加して調合し
た処理液を用いて、SiO□十添加物含有膜でコートし
、該コートした膜厚が500〜3000人であって、前
記処理液の塗布方法として、刷毛塗りスピンナー振り切
り法、スプレー吹付は法、浸漬等速引き上げ法、オフセ
ラ1〜印刷法によることを特徴とするものである。[Means for Solving the Problems] The method for manufacturing a liquid crystal panel of the present invention utilizes the electrical and optical properties of liquid crystal by enclosing a liquid crystal composition in a twisted orientation in a glass cell formed by vertically opposing transparent electrodes. In the manufacturing method of a liquid crystal display panel that displays images, the surfaces of the cell substrates facing each other are coated with a silicon organic solution (general formula: Si (OR) 4.R;
Using a treatment solution prepared by adding the phosphorus element in the form of an inorganic acid at a ratio of 1% to 10% relative to SiO3 to the alkyl group, the film is coated with a film containing SiO , the coated film has a thickness of 500 to 3000, and the treatment liquid is applied by a brush coating spinner shake-off method, a spraying method, a dipping constant velocity pulling method, or an off-sera 1-printing method. It is something to do.
〔実 施 例1 以下本発明の詳細な説明する。[Implementation example 1] The present invention will be explained in detail below.
ケイ素のオーガニックソリューションとはその化学式を
一般的にSi (OR)−(R=アルキル基)で示さ
れる、オルソアルコキシシランである。Organic solutions of silicon are orthoalkoxysilanes whose chemical formula is generally represented by Si (OR)-(R=alkyl group).
この物質をアルコール、酢酸メチル、酢酸エチル、アセ
トン、キシレン、塩酸、硫酸、酢酸、ギ酢などを溶媒と
して調合し処理液として、アルカリ洗浄、酸洗浄、純水
洗浄等、洗浄を充分性なったガラス基板に刷毛塗り、ス
ピンナー回転振り切り法、スプレー吹付は法、浸漬等速
引き上げ法、オフセット印刷法等のいずれかの方法で塗
布し、150 ’C〜200°C程度の温度でプレ焼成
を施すと若干強固な膜になる。更に400°C以上の高
温て焼成して不純物の溶出を防止する効果の高い(以下
高質という)SiO2膜を得る。この処理したガラス基
板で組み立てた液晶表示パネルは従来の処理とほぼ同し
レベル或いはそれ以上の品質のものが得られる。また前
述した処理方法で得た純粋なSiO□膜を高質にする為
に、前記処理液にリンの元素を無機酸の形で前記リンを
適当な割合で添加して処理液を調合し、前記諸方法のい
ずれかの方法を使ってパネル用ガラス基板に処理液塗布
した後、プレ焼成、高温焼成して前記物質の添加された
SiO□膜を得る。この処理したガラス基板でパネル用
セルを組み立てた液晶表示パネルは純粋なSiO□膜の
オーバーコート処理より寿命の長いパネルが得られる。This substance is mixed with alcohol, methyl acetate, ethyl acetate, acetone, xylene, hydrochloric acid, sulfuric acid, acetic acid, formic vinegar, etc. as a solvent and used as a processing solution for thorough cleaning such as alkaline cleaning, acid cleaning, and pure water cleaning. It is applied to a glass substrate by any of the following methods: brush coating, spinner spin-off method, spraying method, immersion uniform speed pulling method, offset printing method, etc., and pre-baking is performed at a temperature of approximately 150'C to 200°C. This results in a slightly stronger film. Further, by firing at a high temperature of 400° C. or higher, a SiO2 film having a high effect of preventing impurity elution (hereinafter referred to as high quality) is obtained. A liquid crystal display panel assembled using this treated glass substrate can have a quality that is almost the same as or higher than that obtained by conventional treatment. In addition, in order to improve the quality of the pure SiO□ film obtained by the above-mentioned treatment method, a treatment solution is prepared by adding phosphorus element in the form of an inorganic acid in an appropriate proportion to the treatment solution. After applying a treatment solution to a glass substrate for a panel using any one of the above-mentioned methods, pre-baking and high-temperature baking are performed to obtain a SiO□ film to which the above-mentioned substance is added. A liquid crystal display panel in which a panel cell is assembled using this treated glass substrate can have a longer lifespan than a panel treated with a pure SiO□ film overcoat.
これはSiO□膜に前記物質を添加することにより高質
の膜が得られたためである。尚添加量の割合はSiO2
に対し、1%〜10%が好ましく、それ以上でも、それ
以下でも効果がうすれる。特に10%を越えれば、逆に
前記物質が液晶組成物中に溶出して配向の乱れを生ずる
欠点がある。1%より少なi−1れば前記物質の添加が
少なすぎて従来の結果に近くなってしまう。This is because a high quality film was obtained by adding the above substance to the SiO□ film. The addition amount ratio is SiO2
1% to 10% is preferable, and the effect will be diminished if it is more or less than that. In particular, if it exceeds 10%, there is a disadvantage that the substance will be eluted into the liquid crystal composition, resulting in disordered alignment. If i-1 is less than 1%, the amount of the substance added will be too small and the result will be close to the conventional result.
このように本発明によれば、従来のSiO□コティング
方法(例えばスパッタ蒸着法真空蒸着法、等々)に比較
して、極めて容易に添加物を加えることが出来ると共に
、添加物の割合も自由にコン1ヘロ−ルすることが可能
である。膜厚については膜の厚い方がよい長寿命を示す
が500人〜3000人の範囲が最も良好である。 本
発明方法は処理液のガラスの塗布条件を出してしまえば
プレ焼成、高温焼成を電気炉で施せばよく、細かな工程
管理を必要とぜず、また設備としては処理液の塗布装置
と電気炉或いはベルト炉があればよく大きな設備投資の
必要がなく、また量産性は従来ある方法と比較にならな
いほど大きく、全体的に非常に大きな合理化を可能にし
た。As described above, according to the present invention, additives can be added extremely easily compared to conventional SiO□ coating methods (e.g., sputter deposition, vacuum deposition, etc.), and the ratio of additives can be freely adjusted. It is possible to use Con1 Hero. Regarding the film thickness, the thicker the film, the better the long life, but the best range is between 500 and 3000 people. In the method of the present invention, once the conditions for applying the glass treatment liquid are determined, pre-firing and high-temperature firing can be performed in an electric furnace, and detailed process control is not required. There is no need for large capital investment as only a furnace or belt furnace is available, mass production is far greater than conventional methods, and overall rationalization has been made possible.
次に実施例を記して本発明を具体的に説明する。Next, the present invention will be specifically explained with reference to Examples.
なお、前述従来のケイ素をオーガニツクンリュションを
塗布して焼成したものと、本発明のリンを添加したもの
とを特性比較した状態は下表の通りである。The table below shows a comparison of the characteristics of the conventional silicon coated with organic oxide and fired and the phosphorus-added silicon of the present invention.
*膜厚 1000人
*Pの添加形態P2O3
極めて良好
良好
はぼ良好
配向性不良発生(ドメインなど)
実施例 1
ケイ素のオーガニックソリューションとしてテトラメト
キシシラン(一般式=S
(OC2H5)4)を5酸化リンとエタノール、ギ酸を
溶媒として約20%に希釈して処理液とした。この処理
液をスピンナー振り切りで透明電極をパターンニングし
たガラス基板上に塗布して150°Cで30分プレ焼成
、更に、500’C7’3時間の焼成を施した。このガ
ラス基板で組み立てた液晶表示パネルは従来の方法によ
り膜形成した液晶表示パネルと比較してほぼ同しレベル
あるいはそれ以上の長寿命パネルが得られた。* Film thickness: 1000 people The solution was diluted to about 20% using ethanol and formic acid as a solvent to prepare a treatment solution. This treatment solution was applied onto a glass substrate patterned with transparent electrodes using a spinner, pre-baked at 150°C for 30 minutes, and further fired at 500°C for 3 hours. The liquid crystal display panel assembled using this glass substrate had a long lifespan that was approximately equal to or longer than that of a liquid crystal display panel formed using a conventional method.
〔発明の効果1
本発明の、ケイ素のオーガニックソリューションに、リ
ンの元素を無機酸の形で51o2に対して1%〜10%
の割合で添加して調合した処理液を用いてS]02+添
加物含有膜てコートし、膜厚が500〜3000人であ
って、前記処理液の塗布方法として削毛塗りスピンナー
振り切り法、スプレー吹付は法、浸漬等引き」二げ法、
才フセノト印刷法によったため、極めて良質のかつ均一
な膜が形成できたため、従来の方法では全く得られなか
った、液晶パネル基板から液晶組成物への不純物の溶出
が完全に押えられ、極めて長寿命で信頼性の高い液晶パ
ネルを安価に製造することかできる格別な効果を奏する
ことができた。[Effect of the invention 1] In the silicon organic solution of the present invention, elemental phosphorus is added in the form of an inorganic acid in an amount of 1% to 10% based on 51o2.
S]02+ additive-containing film was coated using a treatment solution prepared by adding at a ratio of 500 to 3000, and the coating method for the treatment solution was a hair-shaving spinner shake-off method, a spraying method, etc. Spraying method, dipping method, etc.
Because the printing method was used, it was possible to form an extremely high-quality and uniform film, completely suppressing the elution of impurities from the liquid crystal panel substrate into the liquid crystal composition, which could not be obtained using conventional methods. We were able to achieve the extraordinary effect of being able to inexpensively manufacture a liquid crystal panel that has a long life and is highly reliable.
第1図は従来の液晶表示パネル断面図を示す。
第2図はSiO2膜によるオーバーコート処理した液晶
表示パネル断面図を示す。
ガラス基板
ネサ(透明電極)
液晶組成物
SiO3にリンの添加された膜
偏光子
反射板
以
上
第2図
手続補正書
(自発)
手
続
補
正
書
事件の表示
平成
発明の名称
ρ/−−? g 、) 39’ D
元年10月30日付提出の特許願(10)液晶パネル用
基板の製造方法
補正する者
事件との関係 出願人
東京都新宿区西新宿2丁目4番1号
(236)セイコーエプソン株式会社
代表取締役 中 村 恒 也FIG. 1 shows a sectional view of a conventional liquid crystal display panel. FIG. 2 shows a cross-sectional view of a liquid crystal display panel overcoated with a SiO2 film. Glass substrate NESA (transparent electrode) Liquid crystal composition SiO3 film with phosphorus added Polarizer Reflector plate Figure 2 Procedural amendment (voluntary) Indication of procedural amendment case Name of Heisei invention ρ/--? g,) 39'D Patent application filed on October 30, 1999 (10) Relationship with the case concerning a person amending the manufacturing method of a substrate for a liquid crystal panel Applicant: 2-4-1 Nishi-Shinjuku, Shinjuku-ku, Tokyo (236) Seiko Epson Corporation Representative Director Tsuneya Nakamura
Claims (1)
成物をツイスト配向させて封入し液晶の電気的光学的特
性を利用して表示を行なう液晶表示パネルの製造方法に
おいて、前記セルの上下対向させたセル基板の表面を、
ケイ素のオーガニックソリューション{一般式:Si(
OR)_4、R:アルキル基}に、リンの元素を無機酸
の形で前記リンをSiO_2に対して1%〜10%の割
合で添加して調合した処理液を用いて、SiO_2+添
加物含有膜でコートし、該コートした膜厚が500〜3
000Åであって、前記処理液の塗布方法として、刷毛
塗りスピンナー振り切り法、スプレー吹付け法、浸漬等
速引き上げ法、オフセット印刷法によることを特徴とす
る液晶表示パネルの製造方法。A method for manufacturing a liquid crystal display panel in which a liquid crystal composition is sealed in a twisted orientation in a glass cell formed by vertically facing transparent electrodes, and display is performed using the electrical and optical properties of the liquid crystal, wherein the cells are vertically facing each other. The surface of the cell substrate
Silicon organic solution {general formula: Si (
OR)_4, R: alkyl group}, using a treatment liquid prepared by adding the phosphorus element in the form of an inorganic acid at a ratio of 1% to 10% relative to SiO_2, SiO_2+ additive-containing coated with a film, and the coated film thickness is 500 to 3
000 Å, and the method for applying the treatment liquid is a brush coating spinner shake-off method, a spraying method, a dipping constant velocity pulling method, or an offset printing method.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP28238089A JPH02181117A (en) | 1989-10-30 | 1989-10-30 | Production of liquid crystal panel |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP28238089A JPH02181117A (en) | 1989-10-30 | 1989-10-30 | Production of liquid crystal panel |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1944178A Division JPS54112658A (en) | 1978-02-22 | 1978-02-22 | Liquid crystal display panel and production of the same |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH02181117A true JPH02181117A (en) | 1990-07-13 |
Family
ID=17651646
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP28238089A Pending JPH02181117A (en) | 1989-10-30 | 1989-10-30 | Production of liquid crystal panel |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH02181117A (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS644162A (en) * | 1987-06-26 | 1989-01-09 | Nec Corp | Multi-function telephone set |
-
1989
- 1989-10-30 JP JP28238089A patent/JPH02181117A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS644162A (en) * | 1987-06-26 | 1989-01-09 | Nec Corp | Multi-function telephone set |
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