JPS6126679A - Liquid forming electrically conductive transparent coating film - Google Patents

Abstract

PURPOSE:To provide the titled film-forming liquid containing a specific organic indium compound forming an electrically conductive transparent metal oxide by baking, an electrical resistance controlling agent and an organic solvent, and giving a coating film having long life, high mass-productivity excellent conductivity, transparency, etc. CONSTITUTION:The objective film-forming liquid contains (A) an organic indium compound capable of forming an electrically conductive transparent metal oxide by baking and represented by the formula I [X is alkyl of formula CnH2n+1 (n is 1-4), alkene of formula CnH2n (n is 3-5) or alkoxy of formula OCnH2n+1 (n is 1-4)] (e.g. trismethylacetate indium), (B) an electrical resistance controlling agent of preferably the formula II (X is beta-diketone; Y is alkyl) (e.g. dimethyltin acetope) and (C) an organic solvent dissolving the components A and B.

Description

Detailed Description of the Invention [Field of Application of the Invention] The present invention relates to a transparent conductive film forming solution suitable for a dipping method, and particularly to a transparent conductive film forming solution containing an organometallic compound that becomes a transparent conductive metal oxide upon firing. Regarding film forming liquid.

In is formed on an insulating substrate such as glass or ceramics.
It is well known that oxide films such as , Sn, Sb, and ca have high light transmittance and good conductivity.
Used in semiconductor devices, liquid crystal display devices, etc., or as one of the components of electronic functional devices that involve light and electric fields, such as electrophotographic recording media, as well as photoelectric conversion elements such as solar cells and image pickup tubes. It has also been used as a functional film for transparent heat generating elements (defroster), transparent heat insulators, resistors, infrared reflectors, etc.

Methods for forming this metal oxide transparent conductive film include a chemical spray method, a vacuum evaporation method, a sputtering method, and a screen printing method. Although the chemical spray method is advantageous in obtaining a film with a relatively large area, it requires a large amount of equipment and is difficult to control properties. Recently, the vacuum evaporation method has developed into a mask evaporation method, which eliminates the need for etching, but since the process is a batch process, there is a problem in terms of mass production. Like the vacuum evaporation method, the sputtering method also has problems in terms of mass production because the processing is a batch process. Like the vacuum evaporation method, the sputtering method is also a batch process, and is therefore unsuitable for obtaining large-area products. The screen printing method has poor workability during printing, and is particularly difficult to print fine patterns stably.
Further, there was a drawback that the conductivity of the formed film varied widely.

In recent years, the immersion method has attracted attention as a solution to these drawbacks. This method forms a film of any shape on a substrate through the simple steps of (a) applying an organometallic compound solution onto the substrate, (b) drying, (c) baking, and (d) etching. Moreover, it does not require expensive equipment, and it is easy to produce a large amount of electricity.

Various materials have been studied as raw materials for this dipping method, but they have not been put to practical use due to various problems. That is, In0d, , InNOs, Snug,
.

5107? When an organic solvent dispersion of an inorganic salt such as *- is used, there are drawbacks such as the formed film becomes cloudy, has low mechanical strength, and is easily scratched.

On the other hand, it is mainly composed of alkoxy-substituted organic indium compounds such as octyl ribbed indium or indium triptoxide l:IH (004H), and tetrabutoxytin CSn (O
A solution containing an alkoxy-substituted organic tin compound such as OaHo), ) has been used as a transparent conductive film forming solution. However, since these organometallic compounds are easily hydrolyzed, the immersion liquid lacks stability, and the life of the liquid is short, causing problems in workability during film formation. Further, when applied to an insulating substrate, hydrolysis occurs and the coating becomes cloudy, and even if the transparent coating is rubbed, physical properties such as sheet resistance and mechanical strength are insufficient. Furthermore, since it is easily hydrolyzed, the film properties of the formed transparent conductive film tend to vary, making it impossible to obtain a conductive film of stable quality.

[Purpose of the invention]

The purpose of the present invention is to overcome the above-mentioned drawbacks of the prior art, to provide a transparent conductive coating that has a long immersion liquid life, is excellent in mass production, and has low resistance, high transparency, and high adhesion strength. [Summary of the Invention] In order to achieve this object, the present invention provides an organic gold-tin compound that becomes a transparent conductive metal oxide by firing, and an electrical resistance value. In a transparent conductive film forming liquid containing an Il adjustment agent and an organic solvent that dissolves these organometallic compounds and an electrical resistance value adjusting agent, the organometallic compound has the following general structure in which the element is directly coordinated to rl. It is characterized by being an organic indium compound having the formula.

General formula However, X in the formula is general formula 0HH2n4.1 (n -1
-4) or an alkyl group represented by OnHgn
(n-3 to 5), or 00
It is an alkoxy group represented by nH2n+1 (n-1 to 4).

Examples of the indium acetoacetate compound represented by this general formula include indium trisisobutylacetoacetate (2).

In addition, the electrical resistance value adjusting agent used in the present invention includes:
Organotin compounds represented by the following general formula are preferred.

General formula % formula % () However, is X in the formula β-G? ), Y is the general formula cnl
(2n+1 (however, n -1~s) Te ab Sah
;6゜As the organic tin compound represented by this general formula,
For example, dibutyltin acetope O(04H@)2 Sn (αcac)*, which is a combination of acetylacetone and butane.
, dimethyltin acetope (OHM) tsn (α
cac), , diethyltin acetope (C!H1
) * Sn (αcac) etc. are used.

As the organic solvent for dissolving the above-mentioned organic indium compound and electrical resistance value adjusting agent, organic solvents with a low boiling point, such as methanol, are recommended due to their ease of volatilization in the drying process before firing, stability of the solution, economic efficiency, etc. , lower alcohols such as ethanol, esters such as ethyl acetate and tetravir acetate, ketones such as acetone and methyl ketone, and hydrocarbon compounds such as benzene and hexane.

Next, a method for forming a transparent conductive film on a substrate using the forming liquid of the present invention will be described. As the base material, a plate-like material such as glass or ceramic or a material in other shapes is selected depending on the purpose. Further, the concentration of the forming liquid and the pulling speed are adjusted depending on the desired film thickness. After the forming liquid is applied onto the base material in this manner, it is dried. As for drying conditions, if the film is left at 140° C. for 10 minutes, the solvent will sufficiently evaporate and a transparent film will be formed on the substrate. Then 500 in the air
Bake for 30 minutes at ℃. This treatment completely decomposes the organic matter and forms a transparent conductive film on the substrate. If the film thickness is insufficient with this one treatment, repeat the same treatment to achieve the desired film thickness. A transparent conductive film with excellent mechanical strength can be obtained. The following will be described in more detail according to examples.

[Embodiments of the invention]

Example 1 In an indium compound (X is the general formula c'n) Izn
+1 (alkyl group represented by n-1 to 4)), and repeated studies were conducted to find an organic solvent in which these compounds are soluble.

The results for each compound in which n is 1 to 4 are shown in Tables 1 to 4 accordingly. Regarding the solution stability and solution transparency in the table, it is assumed that there is no sediment, dirt, or foreign matter such as floating substances on the surface of the immersion solution for one month after the immersion solution is adjusted, and the condition immediately after adjustment is maintained. Those judged to be immersed in water are marked with ◎, those where the above-mentioned chemical properties have changed are marked with ○, and those where it is judged that the immersion liquid has deteriorated significantly compared to immediately after adjustment are marked with X. Regarding film formation properties during immersion, ◎ marks are judged to be excellent, ○ marks are judged to be good, and X marks are judged to be poor.

15 As is clear from these tables, the organic solvent is preferably methyl ethyl ketone, ethyl acetate, or a mixed solvent of the two. The immersion liquid using these organic solvents was chemically stable for a long period of one month or more, and it was possible to obtain an immersion liquid without deterioration of the liquid.

On the other hand, immersion liquids using alcohols such as methanol or ethanol or ether as organic solvents are
Sedimentation occurred over time, and crystalline floating substances were formed on the liquid surface, resulting in the immersion liquid becoming cloudy and significantly reducing its transparency. Further, as n increased, solubility in various organic solvents also increased, but the chemical properties of the compounds were the same in the cases of n-3 and n-4.

In the organic indium compound to be used (X has the general formula 0
nH2n (alkenes represented by n -3 to 5))
We conducted repeated studies to find organic solvents in which these compounds are soluble. The results for the respective compounds with n from 3 to 5 are shown accordingly in Tables 5 to 7. Note that the criteria for determining each property in the table were based on Example 1.

As is clear from the above table, in the case of n-5, a solution with excellent solubility in organic solvents and other chemical properties can be provided. On the other hand, in the case of n-3 and n-4, it was found that the solubility and other chemical properties were inferior to those of the organic indium compound of Example 1.

Regarding the organic indium compounds represented by the formula (X is an alkoxy group generally represented by 2〇〇nHgn+1 (n-1 to 4)), repeated studies were conducted to find an organic solvent in which these compounds can be dissolved. The results for the respective compounds with n from 1 to 4 are shown accordingly in Tables 8 to 11.

Note that the criteria for determining each property in the table were based on Example 1.

As is clear from these tables, methyl ethyl ketone, ethyl acetate, a mixed solvent of the two, and benzene are preferred as the organic solvent. The immersion liquid using organic indium compounds with n of 1 and 2 was chemically stable for a long period of one month or more, and it was possible to obtain an immersion liquid without deterioration of the liquid. The immersion liquid used as an alcoholic solvent such as methanol or ethanol will precipitate within 2 to 3 days after adjustment, and crystalline suspended matter will form on the surface of the liquid. Significantly decreased. Immersion solutions using organic indium compounds with n of 3 and 4 undergo severe hydrolysis, and precipitates occur within a few hours after the solution is prepared, turning cloudy, resulting in a significant decrease in transparency and making it unusable as an immersion solution. The thing has become clear.

Example 4 From the results of Examples 1 to 3, it was found that methyl ethyl ketone, ethyl acetate, a mixed solvent of the above two types, and benzene were preferable as organic solvents in which the organic indium compound was soluble. We investigated organic tin compounds for value adjustment.

First, as an organic indium compound, the general formula OnHla
In the alkyl group represented by n+1, two types of n-3 and n-4) were used, and dibutylsucedope (a, n,) was used as an organic tin compound for adjusting the electrical resistance value.
Two types of immersion liquids were prepared using sn (acac)1 and methyl ethyl ketone as an organic solvent, each having the following composition ratio.

(Solvent) Methyl ethyl ketone 100-y weight
Make it into a liquid.

(Organic metal) (Solvent) Methyl ethyl ketone 100-y The immersion liquid of the overlying silicone is referred to as B liquid.

However, in the composition, X is the content of the organic tin compound in the mixture of the organic indium compound and the organic tin compound, and y is the content of the organic tin compound (organic indium compound + organic tin compound) in the immersion liquid.

The content y of the organometallic compound in the A and B solutions was defined as 10% by weight, and the film type ti was created by changing the content X of the organotin compound in the organometallic compound. A soda glass substrate having a width of 50 mm x 25 mm and a thickness of 1 rNR was immersed in the solution.

The substrate was pulled out of the solution at a pulling rate of 20 cflK/min and pre-dried at 140°C for 10 minutes. Next, it was baked in a belt furnace at 500° C. for 30 minutes to obtain a transparent conductive film on the glass substrate.

The physical properties of this film, such as surface resistance, film thickness, light transmittance, and film strength, were measured. The relationship between the surface resistance and the content X of the organic tin compound is shown in FIG. Point IA in the figure indicates immersion liquid A, and point WB indicates immersion liquid B. Also A
Table 12 shows the above-mentioned film properties for the liquid, and Table 13 shows the film properties for the B liquid. Transmittance is 55
The visible light transmittance is 0 nm.

Table 12 Table 13 As is clear from these tables and figures, in all immersion liquids, the amount x of the organotin compound added is in the range of 10 to 15 times the total amount of organometallics. is preferred. Among them, a conductive film having a low sheet resistance value of 1285:% can be obtained.

However, it was found that the light transmittance was low in all cases.

Example 5 A film forming solution having the same composition ratio as in Example 4 was prepared using dimethyltin acetope (OHa)t 5n (acac) instead of dibutyltin acetope in Example 4.

Example 6 Diethyltin acetope (OxHs) t Sn (acac
') A membrane rupture-forming solution having the same composition ratio as in Example 4 is prepared using t.

It was experimentally determined that the membrane rupture forming solutions of Examples 5 and 6 exhibited almost the same tendency as the results of Example 4 in terms of organotin compounds, area resistance values, and wBk physical properties.

Example 7 A compound in which X is an alkene represented by the general formula an) (an) was used as a tin compound, dibutylsucedope was used as an organic tin compound for adjusting the electric resistance value, and as a !lie agent. An immersion liquid having the same composition ratio as in Example 4 was prepared using methyl ethyl lactone.

A transparent conductive eardrum was formed on a glass substrate using this immersion liquid, and the physical properties are shown in Table 14. Moreover, the relationship between the sheet resistance value and the content X of the organic tin compound is shown in FIG.

Table 14 As is clear from these tables, the amount X of the organic tin compound added is preferably in the range of 10 to 15% by weight based on the total amount of organic metals. Among them, those having a weight of 12.5% can provide a conductive film having a low sheet resistance value.

Example 8 Dimethyltin acetope (OH3) x SH ((Lcac),
A film forming solution having the same composition ratio as in Example 4 was prepared using the following.

Example 9 Diethyltin acetope (01H*)z SH((LC(LC
)! A film forming solution having the same composition ratio as in Example 4 was prepared using the following.

It has been experimentally confirmed that the film-forming solutions of Examples 8 and 9 exhibit almost the same tendency as the results of Example 7 in the characteristics of the organic soot compound and the sheet resistance value, as well as the physical properties of the films.

As an indium compound, x is an alkoxy group represented by the general formula 0 (3HHan+1, and n-1 and n-2 are respectively used, and as an organic tin compound for adjusting the electric resistance value, dibutyltin acetope, (04Ho)!SH(
acac)! Two types of immersion liquids having the same composition ratio as in Example 4 were prepared using methyl ethyl ketone as an organic solvent.

The forming liquid using the organic indium compound shown in the case of n-1 is called O solution, and the forming liquid using the organic indium compound of n-2 is called D solution. A transparent conductive film was obtained on a glass substrate using these two types of immersion liquid, and the physical properties of this film were measured. The physical properties of the coating for liquid C are shown in Table 15, and the physical properties of the coating for liquid D are shown in Table 16. FIG. 3 shows the relationship between the sheet resistance value of the formed conductive film and the content X of the organic tin compound. Dotted line C in the figure is for film forming liquid C;
Sample 11D is a film-forming liquid.

Table 15 Table 16 As is clear from these tables, the amount X of the organic tin compound added is preferably in the range of 10 to 15 weight based on the total amount of organic metal. 12 of them. ．． 5% by weight, a conductive film having a low sheet resistance value can be obtained.

Example 11 Dimethyltin acetope (OHI) 15n (acac) was used instead of dibutyltin acetope in Example 10.

A film forming solution having the same composition ratio as in Example 4 was prepared using the following.

Example 12 Diethyltin acetope (0xHs)*Sn (acac) was used instead of dibutyltin acetope in Example 10.
.

A film forming solution having the same composition ratio as in Example 4 was prepared using the following. .

It has been experimentally confirmed that the film-forming liquids of Examples 11 and 12 exhibit almost the same tendency as the results of Example 1O in terms of organotin compounds, physical properties, sheet resistance values, and film physical properties.

Example j3, , y According to the results of Examples 4 to 12, in organometallic compounds. The content X of organotin compounds is 12
Since it was found that 5% by weight was optimal, the appropriate content of the organometallic compound was next investigated. In order to conduct this study, a forming solution with a composition of 7 or less ε was prepared.

However, X is an alkyl group represented by the general formula cn)Ign+l, n-3 and 4 ((04Ho)tSn(cLcac)1] o, 12
5y Heavy Lid Yu (solvent) Methyl ethyl ketone 100-y Encyclopedia CH However, y is the total organometallic content.

With this composition, a film forming solution was prepared by varying the content y of the organometallic compound as shown in the table below. Table 17 shows the results of examining the resistance value Rs, light transmittance, film strength, and film thickness. The same table shows the characteristics of the film forming solution using compound n-3.

Regarding the stability of the forming solution, those that can be used for 15 days or more are marked with a circle, those that can be used for 1 to 14 days are marked with a Δ, and those that are less than that are marked with an X.

Regarding the film formability during immersion, those with noticeable white cloudiness and unevenness in film thickness after immersion were marked with an X mark, those with a slightly noticeable difference were marked with a Δ, and those with no particular problems were marked with an ○ mark. Furthermore, regarding the film surface condition after firing, those with noticeable cracks and cloudiness were marked with an X mark, those with somewhat noticeable cracks were marked with a Δ mark, and those with no particular problems were marked with an O mark.

Table 17 As is clear from this table, the total amount of flea iy contained in the total organic gold is 10
~30% by weight, preferably 15-20% by weight,
It has various excellent properties. In addition, cracks and cracks occurred in the 35-layer hood. The forming solution using the n-4 organic indium compound also showed the same characteristics as shown in Table 17. However, the light transmittance was found to be low in all cases. Example 14 Dimethyltin acetope (CHa')t Sn (αc(L
c).

A film forming solution having the same composition ratio as in Example 13 was prepared using the following.

Example 15 Substituent of dibutyltin acetope of Example 13') K
Sea c Chi A/ Tin acedope (C3HI+), S
n(αcac).

A film forming solution having the same composition ratio as in Example 13 was prepared using the following. It has been confirmed through experiments that the film forming liquids of Examples 14 and 15 exhibit similar tendencies to those of Example 13 in terms of the properties of the forming liquids themselves and the properties of the films created with these forming liquids. .

Example 16 A film forming solution having the same composition ratio as Example 13 was prepared using an organic indium compound (where X is n-5 in alkenes represented by the general formula 011Hzl), and an organic metal The -1 content of the compound was studied. The results are shown in Table 18. Note that the criteria for each property in the table were the same as in Example 13.

As is clear from this table, the total organometallic content y is 10~
20% by weight is preferred. Those with a weight of 10 to 17.5 @excellent have various excellent properties.

In addition, cracks and crazing occurred in the 25-story building.

Example 17 Diethyltin acetope CCtHJz sn (acac) was used instead of dibutyltin acetate in Example 16.
.

A film forming solution having the same composition ratio as in Example 16 was prepared using the following.

Example 18 Dimethyltin acetope (OHs) t sn (acac) was used instead of dibutyltin acetope in Example 16.
A film forming solution having the same composition ratio as in Example 16 was prepared using the following.

It has been confirmed through experiments that the coating forming liquids of Examples 17 and 18 exhibit similar tendencies to those of Example 16 in terms of the properties of the forming liquids themselves and the properties of the films formed with these forming liquids.

Example 19 A film-forming solution having the same composition ratio as Example 13 was prepared using an organic indium compound represented by (where X is n-1 and n-2 in the alkoxy group represented by the general formula 00nH2n+1). Table 19 shows the results of a study on the appropriate content of organometallic compounds. This is n-
These are the initial characteristics of the film forming solution using the organic indium compound in case 1.

Note that the criteria for each property in the table were based on Example 13.

Table 19 As is clear from this table, it is preferable that the content y of the organometallic compound is 10 to 25% by weight. In particular, those with 10 to 20 layers have excellent properties.

It has also been found that cracks occur when the content exceeds 30% by weight. The forming solution using an organic indium compound in the case of n-2 also showed the same characteristics as shown in Table 19.

Example 20 Diethylstinacedope CCHs)tsn(acac)t instead of dibutyltinacetope in Example 19
A film forming solution having the same composition ratio as in Example 19 was prepared using the following.

Example 21 A film forming solution having the same composition ratio as in Example 19 is prepared by using dimethyltin acetope (C2HJ@Sn(acac)2) instead of dibutyltin acetope in Example 19. Example 20 It has been experimentally confirmed that the film forming liquid of Example 21 also exhibits the same tendency as Example 19 in the properties of this forming liquid itself and the properties of the film formed with this forming liquid.

Example 22 In order to study the pot life of the conductive film forming liquid, the film forming liquids, E liquid, and F liquid according to the present invention as shown in the following composition table were used.
Prepare liquid, G liquid, and conventional film forming liquid H liquid. Each of these was left to stand at room temperature for a predetermined period of time, then a conductive film was formed, and the change in area resistance as it was left was measured.The results are shown in Figure 4. The film-forming solution H that was used showed a significant increase in the sheet resistance value as the film-forming solution was left to stand, but all of the film-forming solutions E, F, and G according to the present invention show little change over time. Even if the film-forming solution is allowed to stand for a while, a conductive film with a low sheet resistance value is always formed.

Furthermore, in the case of the conventional film forming liquid H, the stability of the liquid is not good, as it becomes cloudy within one day after preparation and completely gels on the third day. On the other hand, film forming liquids E, F, and G according to the present invention
Although the organic solvent volatilizes and the concentration changes when left to stand, it does not gel for more than 20 days and has a longer pot life than conventional ones.

[Brief explanation of the drawing]

FIG. 1, FIG. 2, and FIG. 3 are characteristic diagrams showing the relationship between the organic tin compound content in the film forming solution and the sheet resistance value of the formed conductive film according to each example of the present invention, respectively; FIG. 4 is a characteristic diagram showing changes in sheet resistance values of the film-forming liquid according to the present invention and the conventional film-forming liquid as they are left for a period of time. Figure 1: Tin compound' @ content content x (wt%) Figure 2

Claims (14)

[Claims] (1) A transparent conductive film forming liquid containing an organometallic compound that becomes a transparent conductive metal oxide by firing, an electrical resistance value adjusting agent, and an organic solvent that dissolves the organometallic compound and the electrical resistance value adjusting agent. A transparent conductive film forming liquid, wherein the organometallic compound is an organoindium compound represented by the following general formula. General formula ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼ However, X in the formula is the general formula C_nH_2_n_+_1 (n
=1-4) or C_nH
It is an ankene group represented by _2_n (n=3 to 5) or an alkoxy group represented by OC_nH_2_n_+_1 (n=1 to 4). (2) Claim (1), wherein the organic indium compound is indium trismethylacetoacetate, indium trisethylacetoacetate,
A transparent conductive film forming liquid characterized by being an organic indium compound selected from the group consisting of indium trispropylacetoacetate and indium trisisobutylacetoacetate. (3) In claim (1), the organic indium compound is a group of indium tris-1-propeneacetoacetate, indium tris-1-buteneacetoacetate, and indium tris-1-pentenacetoacetate. A transparent conductive film forming liquid characterized by being an organic indium compound selected from the following. (4) In claim (1), the organic indium compound is selected from the group consisting of indium trismethoxyacetoacetate, indium trisethoxyacetoacetate, indium trispropoxyacetoacetate, and indium trisbutoxyacetoacetate. A transparent conductive film forming liquid characterized by being an organic indium compound. (5) A transparent conductive film forming liquid as set forth in claim (1), wherein the electrical resistance value adjusting agent is an organic tin compound represented by the following general formula. General formula (Y)_2Sn(X)_2 However, in the formula, X is β-diketone and Y is an alkyl group. (6) Claim (5) states that the organotin compound is at least one organotin compound selected from dibutyltin acetope, dimethyltin acetope, and diethyltin acetope. Characteristic transparent conductive film forming liquid. (7) A transparent conductive film-forming liquid according to claim (1), wherein the organic solvent is a low boiling point organic liquid. (8) A transparent conductive film forming liquid as set forth in claim (7), wherein the organic solvent is selected from the group of methyl ethyl ketone, ethyl acetate, and benzene. (9) Claim (5), wherein the organic indium compound is indium trispropylacetoacetate, and the organic tin compound is selected from the group of dibutyltin acetope, dimethyltin acetope, and diethyltin acetope. at least one organic tin compound, wherein the content of the organic tin compound in the mixture of the organic indium compound and the organic tin compound is regulated to a range of about 5 to 20% by weight. Sex film forming liquid. (10) Claim (5), wherein the organic indium compound is indium trisbutylacetoacetate, and the organic tin compound is selected from the group of dibutyltin acetope, dimethyltin acetope, and diethyltin acetope. The content of the organic tin compound in the mixture of the organic indium compound and the organic tin compound is regulated to a range of about 5 to 20% by weight. Film forming liquid. (11) Claim (5), wherein the organic indium compound is indium tris-1-pentenacetoacetate, and the organic tin compound is a group of dibutyltin acetope, dimethyltin acetope, and diethyltin acetope. At least one organic tin compound selected from the following, characterized in that the content of the organic tin compound in the mixture of the organic indium compound and the organic tin compound is regulated to a range of about 5 to 20% by weight. Transparent conductive film forming liquid. (12) Claim (5), wherein the organic indium compound is indium trismethoxyacetoacetate, and the organic tin compound is selected from the group of dibutyltin acetope, dimethyltin acetope, and diethyltin acetope. at least one organotin compound, and the content of the organotin compound in the mixture of the organoindium compound and the organotin compound is about 5%.
A transparent conductive film-forming liquid characterized by being regulated within a range of 20% by weight. (13) Claim (5), wherein the organic indium compound is indium trisethoxyacetoacetate, and the organic tin compound is selected from the group of dibutyltin acetope, dimethyltin acetope, and diethyltin acetope. at least one organotin compound, and the content of the organotin compound in the mixture of the organoindium compound and the organotin compound is about 5%.
A transparent conductive film-forming liquid characterized by being regulated within a range of 20% by weight. (14) The transparent film according to claim (5), wherein the total amount of organic metals in the organic indium compound and the organic tin compound is contained in the film forming liquid in an amount of about 6 to 40% by weight. Conductive film forming liquid.