JPS644058A - Semiconductor integrated circuit device - Google Patents
Semiconductor integrated circuit deviceInfo
- Publication number
- JPS644058A JPS644058A JP62157704A JP15770487A JPS644058A JP S644058 A JPS644058 A JP S644058A JP 62157704 A JP62157704 A JP 62157704A JP 15770487 A JP15770487 A JP 15770487A JP S644058 A JPS644058 A JP S644058A
- Authority
- JP
- Japan
- Prior art keywords
- type
- mos
- substrate
- region
- layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L24/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62157704A JPH0775246B2 (ja) | 1987-06-26 | 1987-06-26 | 半導体集積回路装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62157704A JPH0775246B2 (ja) | 1987-06-26 | 1987-06-26 | 半導体集積回路装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS644058A true JPS644058A (en) | 1989-01-09 |
JPH0775246B2 JPH0775246B2 (ja) | 1995-08-09 |
Family
ID=15655549
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62157704A Expired - Lifetime JPH0775246B2 (ja) | 1987-06-26 | 1987-06-26 | 半導体集積回路装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0775246B2 (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5780340A (en) * | 1996-10-30 | 1998-07-14 | Advanced Micro Devices, Inc. | Method of forming trench transistor and isolation trench |
US5801075A (en) * | 1996-10-30 | 1998-09-01 | Advanced Micro Devices, Inc. | Method of forming trench transistor with metal spacers |
US5874341A (en) * | 1996-10-30 | 1999-02-23 | Advanced Micro Devices, Inc. | Method of forming trench transistor with source contact in trench |
US6057194A (en) * | 1996-10-30 | 2000-05-02 | Advanced Micro Devices, Inc. | Method of forming trench transistor in combination with trench array |
US6100146A (en) * | 1996-10-30 | 2000-08-08 | Advanced Micro Devices, Inc. | Method of forming trench transistor with insulative spacers |
US7973405B2 (en) | 2003-02-14 | 2011-07-05 | Hitachi, Ltd. | Integrated circuit for driving semiconductor device and power converter |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6080243A (ja) * | 1983-10-08 | 1985-05-08 | Nippon Telegr & Teleph Corp <Ntt> | 半導体装置およびその製造方法 |
-
1987
- 1987-06-26 JP JP62157704A patent/JPH0775246B2/ja not_active Expired - Lifetime
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6080243A (ja) * | 1983-10-08 | 1985-05-08 | Nippon Telegr & Teleph Corp <Ntt> | 半導体装置およびその製造方法 |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5780340A (en) * | 1996-10-30 | 1998-07-14 | Advanced Micro Devices, Inc. | Method of forming trench transistor and isolation trench |
US5801075A (en) * | 1996-10-30 | 1998-09-01 | Advanced Micro Devices, Inc. | Method of forming trench transistor with metal spacers |
US5874341A (en) * | 1996-10-30 | 1999-02-23 | Advanced Micro Devices, Inc. | Method of forming trench transistor with source contact in trench |
US5962894A (en) * | 1996-10-30 | 1999-10-05 | Advanced Micro Devices, Inc. | Trench transistor with metal spacers |
US6005272A (en) * | 1996-10-30 | 1999-12-21 | Advanced Micro Devices, Inc. | Trench transistor with source contact in trench |
US6037629A (en) * | 1996-10-30 | 2000-03-14 | Advanced Micro Devices Inc. | Trench transistor and isolation trench |
US6057194A (en) * | 1996-10-30 | 2000-05-02 | Advanced Micro Devices, Inc. | Method of forming trench transistor in combination with trench array |
US6100146A (en) * | 1996-10-30 | 2000-08-08 | Advanced Micro Devices, Inc. | Method of forming trench transistor with insulative spacers |
US6201278B1 (en) | 1996-10-30 | 2001-03-13 | Advanced Micro Devices, Inc. | Trench transistor with insulative spacers |
US7973405B2 (en) | 2003-02-14 | 2011-07-05 | Hitachi, Ltd. | Integrated circuit for driving semiconductor device and power converter |
Also Published As
Publication number | Publication date |
---|---|
JPH0775246B2 (ja) | 1995-08-09 |
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