JPS6439759A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS6439759A
JPS6439759A JP19677587A JP19677587A JPS6439759A JP S6439759 A JPS6439759 A JP S6439759A JP 19677587 A JP19677587 A JP 19677587A JP 19677587 A JP19677587 A JP 19677587A JP S6439759 A JPS6439759 A JP S6439759A
Authority
JP
Japan
Prior art keywords
substrate
conducting film
power source
source wire
film layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19677587A
Other languages
Japanese (ja)
Inventor
Norihiko Kamiyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC IC Microcomputer Systems Co Ltd
Original Assignee
NEC IC Microcomputer Systems Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC IC Microcomputer Systems Co Ltd filed Critical NEC IC Microcomputer Systems Co Ltd
Priority to JP19677587A priority Critical patent/JPS6439759A/en
Publication of JPS6439759A publication Critical patent/JPS6439759A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0925—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising an N-well only in the substrate

Abstract

PURPOSE:To enhance conducting power without increasing the occupation area of a substrate as well as to contrive accomplishment of high integration of a semiconductor integrated circuit device having large driving power by a method wherein a conducting film layer, to be used for a power source wire, is housed in a longitudinal groove provided on a semiconductor substrate. CONSTITUTION:A conducting film layer 19, to be used for a power source wire, is formed in the longitudinal groove 20 perforated on a P-type silicon substrate 11 through the intermediary of a silicon oxide film 15 in such a manner that the layer 19 is dielectrically isolated from the substrate 11. The numbers 13 and 14 in the diagram are the conducting film layers to be used for a signal wire. In the wiring structure in which said conducting film layer for power source wire is housed in the substrate, the thickness or the width of the conducting film can be set thickly or widely irrespective of the other structures on the substrate in order to resist a large current driving.
JP19677587A 1987-08-05 1987-08-05 Semiconductor integrated circuit device Pending JPS6439759A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19677587A JPS6439759A (en) 1987-08-05 1987-08-05 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19677587A JPS6439759A (en) 1987-08-05 1987-08-05 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS6439759A true JPS6439759A (en) 1989-02-10

Family

ID=16363425

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19677587A Pending JPS6439759A (en) 1987-08-05 1987-08-05 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS6439759A (en)

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