JPS6428940A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS6428940A
JPS6428940A JP62185913A JP18591387A JPS6428940A JP S6428940 A JPS6428940 A JP S6428940A JP 62185913 A JP62185913 A JP 62185913A JP 18591387 A JP18591387 A JP 18591387A JP S6428940 A JPS6428940 A JP S6428940A
Authority
JP
Japan
Prior art keywords
guard ring
layers
wiring part
impedance
potential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62185913A
Other languages
Japanese (ja)
Inventor
Toshimasa Usui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62185913A priority Critical patent/JPS6428940A/en
Publication of JPS6428940A publication Critical patent/JPS6428940A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/118—Masterslice integrated circuits
    • H01L27/11803—Masterslice integrated circuits using field effect technology
    • H01L27/11807—CMOS gate arrays

Abstract

PURPOSE:To enhance the breakdown strength of a latch-up by a method wherein a low-impedance conductor wiring part is connected to diffusion layers of an N<+> type diffusion layer and a P<+> type diffusion layer via the sufficient number of contact holes and the diffusion layers are fixed completely at a maximum operating potential and a minimum operating potential. CONSTITUTION:An N<+> type guard ring layer 33 and a P<+> type guard ring layer 32 which surround a PMOS transistor 30 and an NMOS transistor 31 completely are installed. In addition, a low-impedance aluminum wiring part 18 is installed on these guard ring layers; this aluminum wiring part 18 is connected to the respective gurad ring layers 32, 33 via a number of contact holes 13 made in an insulating film (an SiO2 film) 17 formed on the surface of a semiconductor substrate 19; the guard ring layers 32, 33 are made to be substantially low impedance; a potential of the individual guard ring layers is fixed completely to a ground or a power-supply potential. By this setup, it is possible to enhance the breakdown strength of a latch-up.
JP62185913A 1987-07-24 1987-07-24 Semiconductor integrated circuit device Pending JPS6428940A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62185913A JPS6428940A (en) 1987-07-24 1987-07-24 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62185913A JPS6428940A (en) 1987-07-24 1987-07-24 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS6428940A true JPS6428940A (en) 1989-01-31

Family

ID=16179070

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62185913A Pending JPS6428940A (en) 1987-07-24 1987-07-24 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS6428940A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0369141A (en) * 1989-08-08 1991-03-25 Nec Corp Semicustom semiconductor integrated circuit
JP2008205055A (en) * 2007-02-17 2008-09-04 Seiko Instruments Inc Semiconductor device
JP2009147378A (en) * 2009-03-24 2009-07-02 Mitsubishi Electric Corp Semiconductor device
JP2009231851A (en) * 2009-07-09 2009-10-08 Mitsubishi Electric Corp Semiconductor device
US8164112B2 (en) * 2001-01-05 2012-04-24 Macronix International Co., Ltd. Electostatic discharge protection circuit coupled on I/O pad

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0369141A (en) * 1989-08-08 1991-03-25 Nec Corp Semicustom semiconductor integrated circuit
US8164112B2 (en) * 2001-01-05 2012-04-24 Macronix International Co., Ltd. Electostatic discharge protection circuit coupled on I/O pad
JP2008205055A (en) * 2007-02-17 2008-09-04 Seiko Instruments Inc Semiconductor device
JP2009147378A (en) * 2009-03-24 2009-07-02 Mitsubishi Electric Corp Semiconductor device
JP2009231851A (en) * 2009-07-09 2009-10-08 Mitsubishi Electric Corp Semiconductor device

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