JPS6439378A - Production of thin silicon film - Google Patents
Production of thin silicon filmInfo
- Publication number
- JPS6439378A JPS6439378A JP19460087A JP19460087A JPS6439378A JP S6439378 A JPS6439378 A JP S6439378A JP 19460087 A JP19460087 A JP 19460087A JP 19460087 A JP19460087 A JP 19460087A JP S6439378 A JPS6439378 A JP S6439378A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- silicon film
- thin silicon
- hydrogen
- atmosphere
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Chemical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
Abstract
PURPOSE:To form the title high-quality thin silicon film on the surface of a substrate by treating the substrate at a temp. equal to the deposition temp. of the thin silicon film in the atmosphere of a gaseous mixture of hydrogen and chlorine at the time of pretreating the substrate to be deposited with the thin silicon film. CONSTITUTION:The substrate is cleaned by the conventional process to remove the natural-oxidation film by a hydrofluoric acid soln., and then dried in an nitrogen atmosphere. The substrate is then pretreated at 400-600 deg.C in an electric furnace filled with the atmosphere contg. a gaseous mixture of chlorine and hydrogen or further gaseous hydrogen chloride and an inert gas, if necessary, while preventing the formation of the natural-oxidation film. The substrate must have a silicon crystal on at least a part of the surface. The substrate is isolated from the external air, monosilane kept at 500-600 deg.C or a higher silane kept at 400-600 deg.C is supplied onto the substrate, and a thin silicon film is formed on the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19460087A JPH0660401B2 (en) | 1987-08-04 | 1987-08-04 | Silicon thin film manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19460087A JPH0660401B2 (en) | 1987-08-04 | 1987-08-04 | Silicon thin film manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6439378A true JPS6439378A (en) | 1989-02-09 |
| JPH0660401B2 JPH0660401B2 (en) | 1994-08-10 |
Family
ID=16327243
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19460087A Expired - Lifetime JPH0660401B2 (en) | 1987-08-04 | 1987-08-04 | Silicon thin film manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0660401B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0445754B1 (en) * | 1990-03-06 | 1996-02-14 | Sumitomo Electric Industries, Ltd. | Method for growing a diamond or c-BN thin film |
| JP2005294690A (en) * | 2004-04-02 | 2005-10-20 | Hitachi Kokusai Electric Inc | Method for manufacturing semiconductor device and substrate processing apparatus |
| US7357274B2 (en) | 2001-06-18 | 2008-04-15 | Hewett Christopher B | Tissue dispenser |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000357659A (en) * | 1999-06-14 | 2000-12-26 | Nec Corp | Manufacture of semiconductor device |
-
1987
- 1987-08-04 JP JP19460087A patent/JPH0660401B2/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0445754B1 (en) * | 1990-03-06 | 1996-02-14 | Sumitomo Electric Industries, Ltd. | Method for growing a diamond or c-BN thin film |
| US7357274B2 (en) | 2001-06-18 | 2008-04-15 | Hewett Christopher B | Tissue dispenser |
| JP2005294690A (en) * | 2004-04-02 | 2005-10-20 | Hitachi Kokusai Electric Inc | Method for manufacturing semiconductor device and substrate processing apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0660401B2 (en) | 1994-08-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |