JPS643064B2 - - Google Patents

Info

Publication number
JPS643064B2
JPS643064B2 JP58020031A JP2003183A JPS643064B2 JP S643064 B2 JPS643064 B2 JP S643064B2 JP 58020031 A JP58020031 A JP 58020031A JP 2003183 A JP2003183 A JP 2003183A JP S643064 B2 JPS643064 B2 JP S643064B2
Authority
JP
Japan
Prior art keywords
polycrystalline silicon
film
layer
resistance
sio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58020031A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59145561A (ja
Inventor
Masakatsu Yoshida
Takamichi Takebayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP58020031A priority Critical patent/JPS59145561A/ja
Publication of JPS59145561A publication Critical patent/JPS59145561A/ja
Publication of JPS643064B2 publication Critical patent/JPS643064B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P95/90—

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP58020031A 1983-02-09 1983-02-09 半導体装置の製造方法 Granted JPS59145561A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58020031A JPS59145561A (ja) 1983-02-09 1983-02-09 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58020031A JPS59145561A (ja) 1983-02-09 1983-02-09 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS59145561A JPS59145561A (ja) 1984-08-21
JPS643064B2 true JPS643064B2 (OSRAM) 1989-01-19

Family

ID=12015696

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58020031A Granted JPS59145561A (ja) 1983-02-09 1983-02-09 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS59145561A (OSRAM)

Also Published As

Publication number Publication date
JPS59145561A (ja) 1984-08-21

Similar Documents

Publication Publication Date Title
US4309224A (en) Method for manufacturing a semiconductor device
JPS6072272A (ja) 半導体装置の製造方法
JPH0367334B2 (OSRAM)
JPH0564456B2 (OSRAM)
JP3307372B2 (ja) 半導体装置およびその製造方法
JP3003796B2 (ja) Ｍｏｓ型半導体装置の製造方法
JPS6226573B2 (OSRAM)
JPS643064B2 (OSRAM)
JPH0467671A (ja) 半導体装置の製造方法
JP2698585B2 (ja) ポリサイド電極の形成方法
JP3204007B2 (ja) 半導体装置の製造方法
JP3127866B2 (ja) 半導体素子の製造方法
JPH0719759B2 (ja) 半導体装置の製造方法
JPS61270869A (ja) 半導体装置の製法
JPH0127581B2 (OSRAM)
JPH04303944A (ja) 半導体装置の製造方法
JPH01220438A (ja) 半導体装置の製造方法
JP3070088B2 (ja) 半導体装置の製造方法
JPH0155585B2 (OSRAM)
JPH02277246A (ja) 薄膜トランジスタの製造方法
JPH0536911A (ja) ３次元回路素子およびその製造方法
JP3070090B2 (ja) 半導体装置の製造方法
JPH05267164A (ja) ケイ化物とのシリコン接点を備えた集積回路
JP3371414B2 (ja) 配線の形成方法
JPH02246226A (ja) Ｍｏｓトランジスタの製造方法