JPS6428970A - Semiconductor photodetector - Google Patents
Semiconductor photodetectorInfo
- Publication number
- JPS6428970A JPS6428970A JP62185927A JP18592787A JPS6428970A JP S6428970 A JPS6428970 A JP S6428970A JP 62185927 A JP62185927 A JP 62185927A JP 18592787 A JP18592787 A JP 18592787A JP S6428970 A JPS6428970 A JP S6428970A
- Authority
- JP
- Japan
- Prior art keywords
- ingaasp
- intermediate layer
- inp
- beta
- alpha
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To make high-speed response attainable in the case of low intensity of a hitero-interface electric field and to make low noise obtainable the case of high intensity of it, by making carriers, which are larger in an ionization factor in an intermediate layer adjacent to an avalanche multiplying layer, identical with carriers which are larger in the ionization factor in the avalanche multiplying layer. CONSTITUTION:An InGaAsP intermediate layer is divided into at least a first n-InGaAsP intermediate layer 4 and a second n-InGaAsP intermediate layer 4'. Carriers larger in an ionization factor in the second n-InGaAsP intermediate layer 4' adjacent to an n-InP avalanche layer 5 are set identical with InP. In the case of InP, an ionization factor beta of hole carriers is larger than an ionization factor alpha of electron carriers. A relation alpha>beta is defined centrarily in the case of InGaAs. InGaAs composition of alpha>beta and that of beta>alpha exist in InGaAsP with a forbidden band width Eg which is an intermediate value of their widths between InP and InGaAs. when the InGaAsP of Eg>=1.14eV is formed as the second intermediate layer 4' and even if a hetero-electric field is high (e.g., E>250KV/cm) enough to generate avalanche multiplication in the InGaAsP, no noise occurs because of beta>alpha similarly with InP.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62185927A JPS6428970A (en) | 1987-07-24 | 1987-07-24 | Semiconductor photodetector |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62185927A JPS6428970A (en) | 1987-07-24 | 1987-07-24 | Semiconductor photodetector |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6428970A true JPS6428970A (en) | 1989-01-31 |
Family
ID=16179309
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62185927A Pending JPS6428970A (en) | 1987-07-24 | 1987-07-24 | Semiconductor photodetector |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6428970A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5610416A (en) * | 1995-02-16 | 1997-03-11 | Hewlett-Packard Company | Avalanche photodiode with epitaxially regrown guard rings |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5854685A (en) * | 1981-09-28 | 1983-03-31 | Kokusai Denshin Denwa Co Ltd <Kdd> | Avalanche photodiode and manufacture thereof |
JPS58215084A (en) * | 1982-06-08 | 1983-12-14 | Fujitsu Ltd | Semiconductor photo detector |
-
1987
- 1987-07-24 JP JP62185927A patent/JPS6428970A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5854685A (en) * | 1981-09-28 | 1983-03-31 | Kokusai Denshin Denwa Co Ltd <Kdd> | Avalanche photodiode and manufacture thereof |
JPS58215084A (en) * | 1982-06-08 | 1983-12-14 | Fujitsu Ltd | Semiconductor photo detector |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5610416A (en) * | 1995-02-16 | 1997-03-11 | Hewlett-Packard Company | Avalanche photodiode with epitaxially regrown guard rings |
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