JPS6428970A - Semiconductor photodetector - Google Patents

Semiconductor photodetector

Info

Publication number
JPS6428970A
JPS6428970A JP62185927A JP18592787A JPS6428970A JP S6428970 A JPS6428970 A JP S6428970A JP 62185927 A JP62185927 A JP 62185927A JP 18592787 A JP18592787 A JP 18592787A JP S6428970 A JPS6428970 A JP S6428970A
Authority
JP
Japan
Prior art keywords
ingaasp
intermediate layer
inp
beta
alpha
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62185927A
Other languages
Japanese (ja)
Inventor
Toshitaka Torikai
Kikuo Makita
Kenko Taguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62185927A priority Critical patent/JPS6428970A/en
Publication of JPS6428970A publication Critical patent/JPS6428970A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To make high-speed response attainable in the case of low intensity of a hitero-interface electric field and to make low noise obtainable the case of high intensity of it, by making carriers, which are larger in an ionization factor in an intermediate layer adjacent to an avalanche multiplying layer, identical with carriers which are larger in the ionization factor in the avalanche multiplying layer. CONSTITUTION:An InGaAsP intermediate layer is divided into at least a first n-InGaAsP intermediate layer 4 and a second n-InGaAsP intermediate layer 4'. Carriers larger in an ionization factor in the second n-InGaAsP intermediate layer 4' adjacent to an n-InP avalanche layer 5 are set identical with InP. In the case of InP, an ionization factor beta of hole carriers is larger than an ionization factor alpha of electron carriers. A relation alpha>beta is defined centrarily in the case of InGaAs. InGaAs composition of alpha>beta and that of beta>alpha exist in InGaAsP with a forbidden band width Eg which is an intermediate value of their widths between InP and InGaAs. when the InGaAsP of Eg>=1.14eV is formed as the second intermediate layer 4' and even if a hetero-electric field is high (e.g., E>250KV/cm) enough to generate avalanche multiplication in the InGaAsP, no noise occurs because of beta>alpha similarly with InP.
JP62185927A 1987-07-24 1987-07-24 Semiconductor photodetector Pending JPS6428970A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62185927A JPS6428970A (en) 1987-07-24 1987-07-24 Semiconductor photodetector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62185927A JPS6428970A (en) 1987-07-24 1987-07-24 Semiconductor photodetector

Publications (1)

Publication Number Publication Date
JPS6428970A true JPS6428970A (en) 1989-01-31

Family

ID=16179309

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62185927A Pending JPS6428970A (en) 1987-07-24 1987-07-24 Semiconductor photodetector

Country Status (1)

Country Link
JP (1) JPS6428970A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5610416A (en) * 1995-02-16 1997-03-11 Hewlett-Packard Company Avalanche photodiode with epitaxially regrown guard rings

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5854685A (en) * 1981-09-28 1983-03-31 Kokusai Denshin Denwa Co Ltd <Kdd> Avalanche photodiode and manufacture thereof
JPS58215084A (en) * 1982-06-08 1983-12-14 Fujitsu Ltd Semiconductor photo detector

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5854685A (en) * 1981-09-28 1983-03-31 Kokusai Denshin Denwa Co Ltd <Kdd> Avalanche photodiode and manufacture thereof
JPS58215084A (en) * 1982-06-08 1983-12-14 Fujitsu Ltd Semiconductor photo detector

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5610416A (en) * 1995-02-16 1997-03-11 Hewlett-Packard Company Avalanche photodiode with epitaxially regrown guard rings

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