JPS6424244A - Method for opening window in photoresist - Google Patents

Method for opening window in photoresist

Info

Publication number
JPS6424244A
JPS6424244A JP18135787A JP18135787A JPS6424244A JP S6424244 A JPS6424244 A JP S6424244A JP 18135787 A JP18135787 A JP 18135787A JP 18135787 A JP18135787 A JP 18135787A JP S6424244 A JPS6424244 A JP S6424244A
Authority
JP
Japan
Prior art keywords
layer
patterning
diluent
executed
lower layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18135787A
Other languages
Japanese (ja)
Inventor
Shigeki Higuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP18135787A priority Critical patent/JPS6424244A/en
Publication of JPS6424244A publication Critical patent/JPS6424244A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)

Abstract

PURPOSE:To attain an accurate patterning by executing the patterning on a lower layer which is a polymethylmetacrylate layer by using a reacting ion etching method in which a gas mixed oxygen with diluent is set as a reaction gas. CONSTITUTION:The polymethylmetacrylate layer 2 is set as the lower layer and a novolack system photoresist layer 3 is set as an upper layer so as to form two-layer film. And the patterning is executed by exposing and developing the upper layer 3 and the patterning is executed to the lower layer 2 by using the reacting ion etching method in which the gas mixed the oxygen with the diluent is set as the reaction gas. Nitrogen, chlorine, bromine, nitric oxide and argon, etc., can be used as the diluent, but it is desirable to select them according to a base part. Thus, the patterning can be executed in an accurate shape even if the base part has level difference.
JP18135787A 1987-07-21 1987-07-21 Method for opening window in photoresist Pending JPS6424244A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18135787A JPS6424244A (en) 1987-07-21 1987-07-21 Method for opening window in photoresist

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18135787A JPS6424244A (en) 1987-07-21 1987-07-21 Method for opening window in photoresist

Publications (1)

Publication Number Publication Date
JPS6424244A true JPS6424244A (en) 1989-01-26

Family

ID=16099304

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18135787A Pending JPS6424244A (en) 1987-07-21 1987-07-21 Method for opening window in photoresist

Country Status (1)

Country Link
JP (1) JPS6424244A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03183644A (en) * 1989-10-04 1991-08-09 Ppg Ind Inc Strand for weaving glass fiber and its improvement
US5910453A (en) * 1996-01-16 1999-06-08 Advanced Micro Devices, Inc. Deep UV anti-reflection coating etch
WO2015073064A1 (en) * 2013-06-21 2015-05-21 Eastman Kodak Company Patterning for selective area deposition

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03183644A (en) * 1989-10-04 1991-08-09 Ppg Ind Inc Strand for weaving glass fiber and its improvement
US5910453A (en) * 1996-01-16 1999-06-08 Advanced Micro Devices, Inc. Deep UV anti-reflection coating etch
WO2015073064A1 (en) * 2013-06-21 2015-05-21 Eastman Kodak Company Patterning for selective area deposition

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