JPS642367A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS642367A
JPS642367A JP15801487A JP15801487A JPS642367A JP S642367 A JPS642367 A JP S642367A JP 15801487 A JP15801487 A JP 15801487A JP 15801487 A JP15801487 A JP 15801487A JP S642367 A JPS642367 A JP S642367A
Authority
JP
Japan
Prior art keywords
wiring
oxide film
integrated circuit
impurity concentration
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15801487A
Other languages
Japanese (ja)
Other versions
JPH012367A (en
Inventor
Yasuo Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP62-158014A priority Critical patent/JPH012367A/en
Priority claimed from JP62-158014A external-priority patent/JPH012367A/en
Publication of JPS642367A publication Critical patent/JPS642367A/en
Publication of JPH012367A publication Critical patent/JPH012367A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

PURPOSE:To form the structure of a MOSFET using the other wiring as a gate, to shape a high resistance load element capable of controlling the potential of the other wiring in one wiring and to improve the degree of integration by forming one of the wirings crossing through an insulating film by a semiconductor and shaping a crossing region in the wirings in low impurity concentration in a conductivity type different from that of other regions. CONSTITUTION:A first layer wiring 1 extending in the vertical direction in a semiconductor integrated circuit and a second layer wiring 2 extending in the parallel direction are formed by polycrystalline silicon, and laminated onto a field oxide film 3 on a semiconductor substrate 1 through an inter-layer thermal oxide film 4. The wiring 1 is buried into a CVD oxide film 5, only a crossing region 21 in which the wiring 2 crosses is shaped in n-type polycrystalline silicon in low impurity concentration, and p-n junctions are formed with p-type other regions 22 having high impurity concentration and low resistance. When the oxide film 3 is thinned, the resistance of the n<-> region 21 in the wiring 2 is changed by the potential fluctuation of the wiring 1, thus increasing the density of integration of the integrated circuit and lowering power consumption thereof.
JP62-158014A 1987-06-25 Semiconductor integrated circuit device Pending JPH012367A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62-158014A JPH012367A (en) 1987-06-25 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62-158014A JPH012367A (en) 1987-06-25 Semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPS642367A true JPS642367A (en) 1989-01-06
JPH012367A JPH012367A (en) 1989-01-06

Family

ID=

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5468162A (en) * 1994-02-09 1995-11-21 The Whitaker Corporation Locking connector

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58215064A (en) * 1982-06-07 1983-12-14 Toshiba Corp Lamination type semiconductor device
JPS612357A (en) * 1984-06-15 1986-01-08 Hitachi Ltd Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58215064A (en) * 1982-06-07 1983-12-14 Toshiba Corp Lamination type semiconductor device
JPS612357A (en) * 1984-06-15 1986-01-08 Hitachi Ltd Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5468162A (en) * 1994-02-09 1995-11-21 The Whitaker Corporation Locking connector

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