GB1237712A - Semiconductor intergrated circuits - Google Patents

Semiconductor intergrated circuits

Info

Publication number
GB1237712A
GB1237712A GB4147568A GB4147568A GB1237712A GB 1237712 A GB1237712 A GB 1237712A GB 4147568 A GB4147568 A GB 4147568A GB 4147568 A GB4147568 A GB 4147568A GB 1237712 A GB1237712 A GB 1237712A
Authority
GB
United Kingdom
Prior art keywords
collector
junction
base
region
highly doped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4147568A
Inventor
Julian Robert Anthony Beale
Brian Colin Easton
Charles Edward Fuller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Components Ltd
Original Assignee
Mullard Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mullard Ltd filed Critical Mullard Ltd
Priority to GB4147568A priority Critical patent/GB1237712A/en
Publication of GB1237712A publication Critical patent/GB1237712A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0821—Collector regions of bipolar transistors

Abstract

1,237,712. Semi-conductor devices. MULLARD Ltd. 30 Aug., 1968, No. 41475/68. Heading H1K. The collector region of a high-switching speed transistor formed in an epitaxial layer on a substrate 1 has a highly doped part lying directly under the collector-base junction comprising a first portion 11, under that part 8 of the junction which lies directly below the emitter region 5, closer to the free surface 2 than a second portion 12 below an adjoining second part 9 of that junction. The doping concentration of the impurity in the collector region or base region at positions adjacent to the second part 9 of the collector-base junction is smaller than each of the doping concentrations of the impurity in the collector and base regions at positions adjacent to the first part. 8 of the junction. This configuration combines a low collector series resistance with a low collector-base junction capacitance. The highly doped part of the collector extends to the surface 2 and a collector contact 24 is provided together with contacts 21 and 22 for the emitter and base. The epitaxial layers which are silicon may be deposited in specially prepared cavities in a silicon body, the highly doped portion of the collector having been previously formed into the cavity surface 4 by diffusion or ion implantation. The epitaxial deposition may be carried out in one or two stages, and in the latter case the second layer has a higher resistivity than the first layer. Impurities used as dopants are boron, phosphorus and arsenic. In the case of transistors forming part of an integrated circuit, the contacts, of aluminium, provide conductive paths over the insulating layer 3 of silicon oxide. The devices are separated by reverse biased PN junctions and a highly doped surface region 27 is present to prevent parasitic inversion channels. Various configurations of device are described.
GB4147568A 1968-08-30 1968-08-30 Semiconductor intergrated circuits Expired GB1237712A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB4147568A GB1237712A (en) 1968-08-30 1968-08-30 Semiconductor intergrated circuits

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB4147568A GB1237712A (en) 1968-08-30 1968-08-30 Semiconductor intergrated circuits

Publications (1)

Publication Number Publication Date
GB1237712A true GB1237712A (en) 1971-06-30

Family

ID=10419859

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4147568A Expired GB1237712A (en) 1968-08-30 1968-08-30 Semiconductor intergrated circuits

Country Status (1)

Country Link
GB (1) GB1237712A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4032372A (en) * 1971-04-28 1977-06-28 International Business Machines Corporation Epitaxial outdiffusion technique for integrated bipolar and field effect transistors
EP0398247A2 (en) * 1989-05-17 1990-11-22 Kabushiki Kaisha Toshiba Semidonductor device and method of manufacturing the same
US5227654A (en) * 1989-05-17 1993-07-13 Kabushiki Kaisha Toshiba Semiconductor device with improved collector structure

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4032372A (en) * 1971-04-28 1977-06-28 International Business Machines Corporation Epitaxial outdiffusion technique for integrated bipolar and field effect transistors
EP0398247A2 (en) * 1989-05-17 1990-11-22 Kabushiki Kaisha Toshiba Semidonductor device and method of manufacturing the same
EP0398247A3 (en) * 1989-05-17 1992-04-29 Kabushiki Kaisha Toshiba Semidonductor device and method of manufacturing the same
US5227654A (en) * 1989-05-17 1993-07-13 Kabushiki Kaisha Toshiba Semiconductor device with improved collector structure

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