JPS6420659A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS6420659A JPS6420659A JP17740187A JP17740187A JPS6420659A JP S6420659 A JPS6420659 A JP S6420659A JP 17740187 A JP17740187 A JP 17740187A JP 17740187 A JP17740187 A JP 17740187A JP S6420659 A JPS6420659 A JP S6420659A
- Authority
- JP
- Japan
- Prior art keywords
- region
- wirings
- junction
- type
- influence
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To eliminate a decrease in the breakdown strength of a P-N junction due to the influence of wirings by providing a semiconductor layer interposed between insulating films at the intermediate of the wirings and a semiconductor substrate, and providing the P-N junction to the other end of the semiconductor layer. CONSTITUTION:An N-type diffused layer 26 is provided in a P-type silicon substrate 21, and connected to an N-type polysilicon 27 which becomes a field plate. The other end of the plate is extended farther from the position of a depleted layer if it is not provided, and a P-type polysilicon 28 is connected to the end. Aluminum wirings 24 of substantially the same potential as that of the substrate 21 is penetrated through an SiO2 film 23 formed thereon. When the region 28 becomes lower potential due to the influence of the wirings 24, since there is a P-N junction of the type biased reversely to the region 27, even if the region 27 becomes a high potential, charge is not moved from the region 28. Accordingly, the end of the region 28 continues to be a low potential. Thus, the breakdown strength of the P-N junction can not be reduced by the influence of the wirings.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17740187A JPS6420659A (en) | 1987-07-16 | 1987-07-16 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17740187A JPS6420659A (en) | 1987-07-16 | 1987-07-16 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6420659A true JPS6420659A (en) | 1989-01-24 |
Family
ID=16030284
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17740187A Pending JPS6420659A (en) | 1987-07-16 | 1987-07-16 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6420659A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006351753A (en) * | 2005-06-15 | 2006-12-28 | Mitsubishi Electric Corp | Field effect transistor |
-
1987
- 1987-07-16 JP JP17740187A patent/JPS6420659A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006351753A (en) * | 2005-06-15 | 2006-12-28 | Mitsubishi Electric Corp | Field effect transistor |
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