JPS6420659A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6420659A
JPS6420659A JP17740187A JP17740187A JPS6420659A JP S6420659 A JPS6420659 A JP S6420659A JP 17740187 A JP17740187 A JP 17740187A JP 17740187 A JP17740187 A JP 17740187A JP S6420659 A JPS6420659 A JP S6420659A
Authority
JP
Japan
Prior art keywords
region
wirings
junction
type
influence
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17740187A
Other languages
Japanese (ja)
Inventor
Koji Shirai
Takeshi Kawamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP17740187A priority Critical patent/JPS6420659A/en
Publication of JPS6420659A publication Critical patent/JPS6420659A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To eliminate a decrease in the breakdown strength of a P-N junction due to the influence of wirings by providing a semiconductor layer interposed between insulating films at the intermediate of the wirings and a semiconductor substrate, and providing the P-N junction to the other end of the semiconductor layer. CONSTITUTION:An N-type diffused layer 26 is provided in a P-type silicon substrate 21, and connected to an N-type polysilicon 27 which becomes a field plate. The other end of the plate is extended farther from the position of a depleted layer if it is not provided, and a P-type polysilicon 28 is connected to the end. Aluminum wirings 24 of substantially the same potential as that of the substrate 21 is penetrated through an SiO2 film 23 formed thereon. When the region 28 becomes lower potential due to the influence of the wirings 24, since there is a P-N junction of the type biased reversely to the region 27, even if the region 27 becomes a high potential, charge is not moved from the region 28. Accordingly, the end of the region 28 continues to be a low potential. Thus, the breakdown strength of the P-N junction can not be reduced by the influence of the wirings.
JP17740187A 1987-07-16 1987-07-16 Semiconductor device Pending JPS6420659A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17740187A JPS6420659A (en) 1987-07-16 1987-07-16 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17740187A JPS6420659A (en) 1987-07-16 1987-07-16 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS6420659A true JPS6420659A (en) 1989-01-24

Family

ID=16030284

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17740187A Pending JPS6420659A (en) 1987-07-16 1987-07-16 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS6420659A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006351753A (en) * 2005-06-15 2006-12-28 Mitsubishi Electric Corp Field effect transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006351753A (en) * 2005-06-15 2006-12-28 Mitsubishi Electric Corp Field effect transistor

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