JPS6420614A - Gaas vapor growth method - Google Patents

Abstract

PURPOSE:To generate GaAs crust having a uniform thickness in a Ga source by disposing a raw gas supply tube having a gas exhaust holes which are larger in diameter toward the downstream side of a gas flow at its hole in a region directly above the source, and injecting the gas from the hole to the source. CONSTITUTION:A reaction tube 2 is inserted into a cylindrical growing furnace 1, a Ga source 5 is disposed in a high temperature region therein, and a substrate 8 held by a substrate holder 7 is disposed in a low temperature region. When a doping gas supply tube 6, an etching as supply tube 4 and a raw gas supply tube 3 are inserted from the end into the tube 2, the exhaust holes of the respective tubes are so disposed that the tube 6 is at the deepest side and the tube 3 is at the endmost side. A plurality of exhaust holes 9 are arranged directly above the source 5 along a gas flowing direction 10 at the end of the tube 3 in such a manner that the diameter of the hole is gradually increased along the direction 10. Thus, when it is epitaxially grown on a substrate 8 simultaneously upon formation of a crust at the source 5, the distribution of the GaAs crust on the source 5 becomes uniform.