JPS6420610A - Hot wall epitaxial growth apparatus - Google Patents

Hot wall epitaxial growth apparatus

Info

Publication number
JPS6420610A
JPS6420610A JP17759687A JP17759687A JPS6420610A JP S6420610 A JPS6420610 A JP S6420610A JP 17759687 A JP17759687 A JP 17759687A JP 17759687 A JP17759687 A JP 17759687A JP S6420610 A JPS6420610 A JP S6420610A
Authority
JP
Japan
Prior art keywords
crucible
epitaxial layer
source
substrate
growth apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17759687A
Other languages
Japanese (ja)
Inventor
Koji Ebe
Yoshito Nishijima
Koji Shinohara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP17759687A priority Critical patent/JPS6420610A/en
Publication of JPS6420610A publication Critical patent/JPS6420610A/en
Pending legal-status Critical Current

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  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

PURPOSE:To prevent the epitaxial layer thickness from changing even if the source amount changes, by providing a thin section to the evaporation path of a crucible when an epitaxial growth apparatus is composed of a crucible containing epitaxial layer forming source and a substrate arranged opposite to the upper opening in a vacuum vessel. CONSTITUTION:When a crucible 21 containing source 3 for epitaxial layer forming is arranged in a vacuum vessel 1, the bottom of the crucible 21 enclosed by heaters 2 is closed and the upper end is open, and at the same time, a circular protrusion 20 is prepared in the inner wall of a part of the evaporation path of source 3 to provide a thin section. Then a substrate 6 is attached at the lower side of a substrate base 8 opposing to the upper opening of the crucible 21. The thickness and the composition of an epitaxial layer accumulated on the surface of the substrate 6 do not change thereby if the amount of source 3 in the crucible 21 changes, and an epitaxial layer of good characteristics can be acquired.
JP17759687A 1987-07-15 1987-07-15 Hot wall epitaxial growth apparatus Pending JPS6420610A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17759687A JPS6420610A (en) 1987-07-15 1987-07-15 Hot wall epitaxial growth apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17759687A JPS6420610A (en) 1987-07-15 1987-07-15 Hot wall epitaxial growth apparatus

Publications (1)

Publication Number Publication Date
JPS6420610A true JPS6420610A (en) 1989-01-24

Family

ID=16033760

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17759687A Pending JPS6420610A (en) 1987-07-15 1987-07-15 Hot wall epitaxial growth apparatus

Country Status (1)

Country Link
JP (1) JPS6420610A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002353569A (en) * 2001-05-23 2002-12-06 Akihiro Ishida Semiconductor laser element and semiconductor laser

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59156996A (en) * 1983-02-23 1984-09-06 Koito Mfg Co Ltd Method and device for manufacturing crystalline film of compound
JPS61144833A (en) * 1984-12-19 1986-07-02 Fujitsu Ltd Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59156996A (en) * 1983-02-23 1984-09-06 Koito Mfg Co Ltd Method and device for manufacturing crystalline film of compound
JPS61144833A (en) * 1984-12-19 1986-07-02 Fujitsu Ltd Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002353569A (en) * 2001-05-23 2002-12-06 Akihiro Ishida Semiconductor laser element and semiconductor laser

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