JPS6420610A - Hot wall epitaxial growth apparatus - Google Patents
Hot wall epitaxial growth apparatusInfo
- Publication number
- JPS6420610A JPS6420610A JP17759687A JP17759687A JPS6420610A JP S6420610 A JPS6420610 A JP S6420610A JP 17759687 A JP17759687 A JP 17759687A JP 17759687 A JP17759687 A JP 17759687A JP S6420610 A JPS6420610 A JP S6420610A
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- epitaxial layer
- source
- substrate
- growth apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
PURPOSE:To prevent the epitaxial layer thickness from changing even if the source amount changes, by providing a thin section to the evaporation path of a crucible when an epitaxial growth apparatus is composed of a crucible containing epitaxial layer forming source and a substrate arranged opposite to the upper opening in a vacuum vessel. CONSTITUTION:When a crucible 21 containing source 3 for epitaxial layer forming is arranged in a vacuum vessel 1, the bottom of the crucible 21 enclosed by heaters 2 is closed and the upper end is open, and at the same time, a circular protrusion 20 is prepared in the inner wall of a part of the evaporation path of source 3 to provide a thin section. Then a substrate 6 is attached at the lower side of a substrate base 8 opposing to the upper opening of the crucible 21. The thickness and the composition of an epitaxial layer accumulated on the surface of the substrate 6 do not change thereby if the amount of source 3 in the crucible 21 changes, and an epitaxial layer of good characteristics can be acquired.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17759687A JPS6420610A (en) | 1987-07-15 | 1987-07-15 | Hot wall epitaxial growth apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17759687A JPS6420610A (en) | 1987-07-15 | 1987-07-15 | Hot wall epitaxial growth apparatus |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6420610A true JPS6420610A (en) | 1989-01-24 |
Family
ID=16033760
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17759687A Pending JPS6420610A (en) | 1987-07-15 | 1987-07-15 | Hot wall epitaxial growth apparatus |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6420610A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002353569A (en) * | 2001-05-23 | 2002-12-06 | Akihiro Ishida | Semiconductor laser element and semiconductor laser |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59156996A (en) * | 1983-02-23 | 1984-09-06 | Koito Mfg Co Ltd | Method and device for manufacturing crystalline film of compound |
JPS61144833A (en) * | 1984-12-19 | 1986-07-02 | Fujitsu Ltd | Semiconductor device |
-
1987
- 1987-07-15 JP JP17759687A patent/JPS6420610A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59156996A (en) * | 1983-02-23 | 1984-09-06 | Koito Mfg Co Ltd | Method and device for manufacturing crystalline film of compound |
JPS61144833A (en) * | 1984-12-19 | 1986-07-02 | Fujitsu Ltd | Semiconductor device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002353569A (en) * | 2001-05-23 | 2002-12-06 | Akihiro Ishida | Semiconductor laser element and semiconductor laser |
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