JPS6417487A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS6417487A
JPS6417487A JP17322287A JP17322287A JPS6417487A JP S6417487 A JPS6417487 A JP S6417487A JP 17322287 A JP17322287 A JP 17322287A JP 17322287 A JP17322287 A JP 17322287A JP S6417487 A JPS6417487 A JP S6417487A
Authority
JP
Japan
Prior art keywords
layer
type
grown
approx
semiconductor laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17322287A
Other languages
English (en)
Other versions
JPH0716079B2 (ja
Inventor
Yoshihiro Mori
Masato Ishino
Toshiya Yokogawa
Hideki Yakida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP17322287A priority Critical patent/JPH0716079B2/ja
Publication of JPS6417487A publication Critical patent/JPS6417487A/ja
Publication of JPH0716079B2 publication Critical patent/JPH0716079B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1228—DFB lasers with a complex coupled grating, e.g. gain or loss coupling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H01S5/3432—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs the whole junction comprising only (AI)GaAs

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
JP17322287A 1987-07-10 1987-07-10 半導体レ−ザ装置 Expired - Lifetime JPH0716079B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17322287A JPH0716079B2 (ja) 1987-07-10 1987-07-10 半導体レ−ザ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17322287A JPH0716079B2 (ja) 1987-07-10 1987-07-10 半導体レ−ザ装置

Publications (2)

Publication Number Publication Date
JPS6417487A true JPS6417487A (en) 1989-01-20
JPH0716079B2 JPH0716079B2 (ja) 1995-02-22

Family

ID=15956397

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17322287A Expired - Lifetime JPH0716079B2 (ja) 1987-07-10 1987-07-10 半導体レ−ザ装置

Country Status (1)

Country Link
JP (1) JPH0716079B2 (ja)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02244116A (ja) * 1989-03-17 1990-09-28 Hitachi Ltd 光学特性変調器および光学素子
JPH03148889A (ja) * 1989-11-06 1991-06-25 Nippon Telegr & Teleph Corp <Ntt> 半導体レーザ
EP0513745A2 (en) * 1991-05-13 1992-11-19 CSELT Centro Studi e Laboratori Telecomunicazioni S.p.A. A gain-coupled distributed-feed-back semiconductor laser
JPH05503180A (ja) * 1989-12-13 1993-05-27 バイオ―ロジック・システムズ・コーポレーション コンピュータ支援による睡眠の分析
US5313484A (en) * 1991-06-13 1994-05-17 Fujitsu Limited Quantum box or quantum wire semiconductor structure and methods of producing same
US5991322A (en) * 1993-07-20 1999-11-23 Mitsubishi Denki Kabushiki Kaisha Semiconductor optical device
JP2002299752A (ja) * 2001-04-02 2002-10-11 Sumitomo Electric Ind Ltd 光集積素子の製造方法および光集積素子
JP2007157884A (ja) * 2005-12-02 2007-06-21 Nec Corp 光変調器集積光源

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02244116A (ja) * 1989-03-17 1990-09-28 Hitachi Ltd 光学特性変調器および光学素子
JPH03148889A (ja) * 1989-11-06 1991-06-25 Nippon Telegr & Teleph Corp <Ntt> 半導体レーザ
JPH05503180A (ja) * 1989-12-13 1993-05-27 バイオ―ロジック・システムズ・コーポレーション コンピュータ支援による睡眠の分析
EP0513745A2 (en) * 1991-05-13 1992-11-19 CSELT Centro Studi e Laboratori Telecomunicazioni S.p.A. A gain-coupled distributed-feed-back semiconductor laser
US5276702A (en) * 1991-05-13 1994-01-04 Cselt-Centro Studi E Laboratori Telecommunicazioni S.P.A. Gain-coupled distributed-feedback semiconductor laser
US5313484A (en) * 1991-06-13 1994-05-17 Fujitsu Limited Quantum box or quantum wire semiconductor structure and methods of producing same
US5991322A (en) * 1993-07-20 1999-11-23 Mitsubishi Denki Kabushiki Kaisha Semiconductor optical device
JP2002299752A (ja) * 2001-04-02 2002-10-11 Sumitomo Electric Ind Ltd 光集積素子の製造方法および光集積素子
JP2007157884A (ja) * 2005-12-02 2007-06-21 Nec Corp 光変調器集積光源

Also Published As

Publication number Publication date
JPH0716079B2 (ja) 1995-02-22

Similar Documents

Publication Publication Date Title
JPS57176785A (en) Semiconductor laser device
JPS6417487A (en) Semiconductor laser device
GB1500590A (en) Semiconductor laser device and a method for fabricating the same
JPS5723292A (en) Semiconductor laser device and manufacture thereof
JPS5269285A (en) Semiconductor laser device
JPH04184973A (ja) 長波長光送信ｏｅｉｃ
JPS5493380A (en) Semiconductor light emitting device
JP2758472B2 (ja) 光変調器
JPS6425590A (en) Manufacture of semiconductor laser
JPS5518094A (en) Semiconductor laser device with high optical output and horizontal fundamental mode
JPS648691A (en) Integrated semiconductor laser element
JPS57162382A (en) Semiconductor laser
JPS5524418A (en) Light integrated circuit
JPS57139984A (en) Buried photo emitting and receiving semiconductor integrated device
JPS6450591A (en) Semiconductor device and manufacture thereof
JPS5673485A (en) Semiconductor luminous element
JPS55125690A (en) Semiconductor laser
JPS55154792A (en) Semiconductor laser
JPS647582A (en) Photosemiconductor device
JPS56112786A (en) Manufacture of semiconductor laser
JPS5595387A (en) Semiconductor light emitting device
JPS55123191A (en) Semiconductor light emitting device
JPS57139982A (en) Semiconductor laser element
JPS57193080A (en) Plane light emission type high intensity light emitting diode
JPS62281384A (ja) 半導体レ−ザ素子およびその製造方法