JPS6417364A - Electron beam device - Google Patents

Electron beam device

Info

Publication number
JPS6417364A
JPS6417364A JP17303787A JP17303787A JPS6417364A JP S6417364 A JPS6417364 A JP S6417364A JP 17303787 A JP17303787 A JP 17303787A JP 17303787 A JP17303787 A JP 17303787A JP S6417364 A JPS6417364 A JP S6417364A
Authority
JP
Japan
Prior art keywords
temperature
magnetic pole
beam irradiating
deflecting lens
hysteresis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17303787A
Other languages
Japanese (ja)
Inventor
Taizo Iwami
Eishin Murakami
Masashi Yasunaga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP17303787A priority Critical patent/JPS6417364A/en
Publication of JPS6417364A publication Critical patent/JPS6417364A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To lessen the extent of errors in a beam irradiating position attributable to a hysteresis characteristic as well as to make high beam irradiating positional accuracy securable by performing temperature control over a magnetic pole of a deflecting lens consisting of ferrite material so as to make hysteresis lessen. CONSTITUTION:In a magnetic pole 14 of a deflecting lens 6, there are provided with a thermometric device 21, a heating device 22 and a cooling device 23, and also there is provided with a controller 24 which controls these heating and cooling devices 22 and 23 so as to cause the temperature measured by the thermometric device 21 to become the preset temperature. With this constitution, temperature in ferrite material for the magnetic pole 14 of the deflecting lens 6 is kept constant in such a temperature that coercive force comes to the smallest within the temperature range of less than a Curie point of the magnetic pole 14, thus a hysteresis loop is reduced and the extent of errors in a beam irradiating position is lessened.
JP17303787A 1987-07-13 1987-07-13 Electron beam device Pending JPS6417364A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17303787A JPS6417364A (en) 1987-07-13 1987-07-13 Electron beam device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17303787A JPS6417364A (en) 1987-07-13 1987-07-13 Electron beam device

Publications (1)

Publication Number Publication Date
JPS6417364A true JPS6417364A (en) 1989-01-20

Family

ID=15953031

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17303787A Pending JPS6417364A (en) 1987-07-13 1987-07-13 Electron beam device

Country Status (1)

Country Link
JP (1) JPS6417364A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05190428A (en) * 1992-01-13 1993-07-30 Fujitsu Ltd Method and apparatus for charged particle beam exposure
KR100245942B1 (en) * 1996-04-04 2000-03-02 다니구찌 이찌로오 Static semiconductor memory device including a bipolar transistor in a memory cell, semiconductor device including bipolar transistor and method of manufacturing bipolar transistors
JP2002361119A (en) * 2001-06-05 2002-12-17 Nordson Kk Nozzle cap of adhesive discharge device
DE10235455A1 (en) * 2002-08-02 2004-02-12 Leo Elektronenmikroskopie Gmbh Magnetic field particle optical device for using a magnetic field to deflect charged particles in a beam has a magnetic-flux-conducting body, a current conductor and a temperature moderator
EP1498929A2 (en) * 2003-07-14 2005-01-19 FEI Company Magnetic lens
US8013311B2 (en) 2003-07-14 2011-09-06 Fei Company Dual beam system
US8183547B2 (en) 2009-05-28 2012-05-22 Fei Company Dual beam system

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05190428A (en) * 1992-01-13 1993-07-30 Fujitsu Ltd Method and apparatus for charged particle beam exposure
KR100245942B1 (en) * 1996-04-04 2000-03-02 다니구찌 이찌로오 Static semiconductor memory device including a bipolar transistor in a memory cell, semiconductor device including bipolar transistor and method of manufacturing bipolar transistors
JP2002361119A (en) * 2001-06-05 2002-12-17 Nordson Kk Nozzle cap of adhesive discharge device
DE10235455A1 (en) * 2002-08-02 2004-02-12 Leo Elektronenmikroskopie Gmbh Magnetic field particle optical device for using a magnetic field to deflect charged particles in a beam has a magnetic-flux-conducting body, a current conductor and a temperature moderator
US6914248B2 (en) 2002-08-02 2005-07-05 Carl Zeiss Nts Gmbh Particle-optical apparatus and method for operating the same
DE10235455B4 (en) * 2002-08-02 2007-09-27 Leo Elektronenmikroskopie Gmbh Particle-optical device and method of operating the same
DE10235455B9 (en) * 2002-08-02 2008-01-24 Leo Elektronenmikroskopie Gmbh Particle-optical device and method of operating the same
EP1498929A2 (en) * 2003-07-14 2005-01-19 FEI Company Magnetic lens
EP1498929A3 (en) * 2003-07-14 2009-09-02 FEI Company Magnetic lens
US8013311B2 (en) 2003-07-14 2011-09-06 Fei Company Dual beam system
US8399864B2 (en) 2003-07-14 2013-03-19 Fei Company Dual beam system
US8183547B2 (en) 2009-05-28 2012-05-22 Fei Company Dual beam system

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