JPS6417364A - Electron beam device - Google Patents
Electron beam deviceInfo
- Publication number
- JPS6417364A JPS6417364A JP17303787A JP17303787A JPS6417364A JP S6417364 A JPS6417364 A JP S6417364A JP 17303787 A JP17303787 A JP 17303787A JP 17303787 A JP17303787 A JP 17303787A JP S6417364 A JPS6417364 A JP S6417364A
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- magnetic pole
- beam irradiating
- deflecting lens
- hysteresis
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To lessen the extent of errors in a beam irradiating position attributable to a hysteresis characteristic as well as to make high beam irradiating positional accuracy securable by performing temperature control over a magnetic pole of a deflecting lens consisting of ferrite material so as to make hysteresis lessen. CONSTITUTION:In a magnetic pole 14 of a deflecting lens 6, there are provided with a thermometric device 21, a heating device 22 and a cooling device 23, and also there is provided with a controller 24 which controls these heating and cooling devices 22 and 23 so as to cause the temperature measured by the thermometric device 21 to become the preset temperature. With this constitution, temperature in ferrite material for the magnetic pole 14 of the deflecting lens 6 is kept constant in such a temperature that coercive force comes to the smallest within the temperature range of less than a Curie point of the magnetic pole 14, thus a hysteresis loop is reduced and the extent of errors in a beam irradiating position is lessened.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17303787A JPS6417364A (en) | 1987-07-13 | 1987-07-13 | Electron beam device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17303787A JPS6417364A (en) | 1987-07-13 | 1987-07-13 | Electron beam device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6417364A true JPS6417364A (en) | 1989-01-20 |
Family
ID=15953031
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17303787A Pending JPS6417364A (en) | 1987-07-13 | 1987-07-13 | Electron beam device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6417364A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05190428A (en) * | 1992-01-13 | 1993-07-30 | Fujitsu Ltd | Method and apparatus for charged particle beam exposure |
KR100245942B1 (en) * | 1996-04-04 | 2000-03-02 | 다니구찌 이찌로오 | Static semiconductor memory device including a bipolar transistor in a memory cell, semiconductor device including bipolar transistor and method of manufacturing bipolar transistors |
JP2002361119A (en) * | 2001-06-05 | 2002-12-17 | Nordson Kk | Nozzle cap of adhesive discharge device |
DE10235455A1 (en) * | 2002-08-02 | 2004-02-12 | Leo Elektronenmikroskopie Gmbh | Magnetic field particle optical device for using a magnetic field to deflect charged particles in a beam has a magnetic-flux-conducting body, a current conductor and a temperature moderator |
EP1498929A2 (en) * | 2003-07-14 | 2005-01-19 | FEI Company | Magnetic lens |
US8013311B2 (en) | 2003-07-14 | 2011-09-06 | Fei Company | Dual beam system |
US8183547B2 (en) | 2009-05-28 | 2012-05-22 | Fei Company | Dual beam system |
-
1987
- 1987-07-13 JP JP17303787A patent/JPS6417364A/en active Pending
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05190428A (en) * | 1992-01-13 | 1993-07-30 | Fujitsu Ltd | Method and apparatus for charged particle beam exposure |
KR100245942B1 (en) * | 1996-04-04 | 2000-03-02 | 다니구찌 이찌로오 | Static semiconductor memory device including a bipolar transistor in a memory cell, semiconductor device including bipolar transistor and method of manufacturing bipolar transistors |
JP2002361119A (en) * | 2001-06-05 | 2002-12-17 | Nordson Kk | Nozzle cap of adhesive discharge device |
DE10235455A1 (en) * | 2002-08-02 | 2004-02-12 | Leo Elektronenmikroskopie Gmbh | Magnetic field particle optical device for using a magnetic field to deflect charged particles in a beam has a magnetic-flux-conducting body, a current conductor and a temperature moderator |
US6914248B2 (en) | 2002-08-02 | 2005-07-05 | Carl Zeiss Nts Gmbh | Particle-optical apparatus and method for operating the same |
DE10235455B4 (en) * | 2002-08-02 | 2007-09-27 | Leo Elektronenmikroskopie Gmbh | Particle-optical device and method of operating the same |
DE10235455B9 (en) * | 2002-08-02 | 2008-01-24 | Leo Elektronenmikroskopie Gmbh | Particle-optical device and method of operating the same |
EP1498929A2 (en) * | 2003-07-14 | 2005-01-19 | FEI Company | Magnetic lens |
EP1498929A3 (en) * | 2003-07-14 | 2009-09-02 | FEI Company | Magnetic lens |
US8013311B2 (en) | 2003-07-14 | 2011-09-06 | Fei Company | Dual beam system |
US8399864B2 (en) | 2003-07-14 | 2013-03-19 | Fei Company | Dual beam system |
US8183547B2 (en) | 2009-05-28 | 2012-05-22 | Fei Company | Dual beam system |
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