JPS6414110A - Method for crushing high purity silicon - Google Patents

Method for crushing high purity silicon

Info

Publication number
JPS6414110A
JPS6414110A JP16856487A JP16856487A JPS6414110A JP S6414110 A JPS6414110 A JP S6414110A JP 16856487 A JP16856487 A JP 16856487A JP 16856487 A JP16856487 A JP 16856487A JP S6414110 A JPS6414110 A JP S6414110A
Authority
JP
Japan
Prior art keywords
high purity
purity silicon
liq
cooling medium
heated high
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16856487A
Other languages
Japanese (ja)
Other versions
JPH0829924B2 (en
Inventor
Toshihiro Abe
Hiroji Miyagawa
Kenji Iwata
Keiichi Ikeda
Kenji Okimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsui Toatsu Chemicals Inc
Original Assignee
Mitsui Toatsu Chemicals Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Toatsu Chemicals Inc filed Critical Mitsui Toatsu Chemicals Inc
Priority to JP16856487A priority Critical patent/JPH0829924B2/en
Publication of JPS6414110A publication Critical patent/JPS6414110A/en
Publication of JPH0829924B2 publication Critical patent/JPH0829924B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Silicon Compounds (AREA)

Abstract

PURPOSE:To minimize the contamination of silicon product crushing and to prevent the formation of fine powder or particles by crushing heated high purity silicon by rapid cooling caused by contact with a liq. inert cooling medium. CONSTITUTION:Heated high purity silicon is crushed by rapid cooling caused by contact with a liq. inert cooling medium. The heated high purity silicon is preferably in the form of granules or a melt and the pref. heating temp. is 500-1500 deg.C. The liq. inert cooling medium is a liquefied gas, preferably liquefied helium, neon, argon, nitrogen or hydrogen.
JP16856487A 1987-07-08 1987-07-08 Method for crushing high-purity silicon Expired - Lifetime JPH0829924B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16856487A JPH0829924B2 (en) 1987-07-08 1987-07-08 Method for crushing high-purity silicon

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16856487A JPH0829924B2 (en) 1987-07-08 1987-07-08 Method for crushing high-purity silicon

Publications (2)

Publication Number Publication Date
JPS6414110A true JPS6414110A (en) 1989-01-18
JPH0829924B2 JPH0829924B2 (en) 1996-03-27

Family

ID=15870373

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16856487A Expired - Lifetime JPH0829924B2 (en) 1987-07-08 1987-07-08 Method for crushing high-purity silicon

Country Status (1)

Country Link
JP (1) JPH0829924B2 (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0329163A2 (en) * 1988-02-18 1989-08-23 Advanced Silicon Materials, Inc. Method for forming presized particles from silicon rods
JPH029706A (en) * 1988-03-31 1990-01-12 Heliotronic Forsch & Entwickl Ges Solar Grunds Mbh Method for pulverizing a solid silicon lump
JPH067700A (en) * 1992-03-19 1994-01-18 Korea Res Inst Chem Technol Method for jet pulverizing of silicon particle
US20130236642A1 (en) * 2009-09-24 2013-09-12 Wacker Chemie Ag Rod-type polysilicon having improved breaking properties
JP2016527176A (en) * 2013-08-02 2016-09-08 ワッカー ケミー アクチエンゲゼルシャフトＷａｃｋｅｒ Ｃｈｅｍｉｅ ＡＧ Method for size reduction of silicon and use of size-reduced silicon in lithium ion batteries
CN111921665A (en) * 2020-07-17 2020-11-13 自贡佳源炉业有限公司 Annular material crushing treatment system and method
CN112192770A (en) * 2020-10-13 2021-01-08 浙江欧亚光电科技有限公司 Cooling liquid collecting and separating device of diamond wire silicon wafer cutting machine
CN114214723A (en) * 2021-12-14 2022-03-22 山东大学 Preparation method of quasi-intrinsic semi-insulating silicon carbide single crystal

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0329163A2 (en) * 1988-02-18 1989-08-23 Advanced Silicon Materials, Inc. Method for forming presized particles from silicon rods
JPH029706A (en) * 1988-03-31 1990-01-12 Heliotronic Forsch & Entwickl Ges Solar Grunds Mbh Method for pulverizing a solid silicon lump
JPH067700A (en) * 1992-03-19 1994-01-18 Korea Res Inst Chem Technol Method for jet pulverizing of silicon particle
US20130236642A1 (en) * 2009-09-24 2013-09-12 Wacker Chemie Ag Rod-type polysilicon having improved breaking properties
US9238866B2 (en) * 2009-09-24 2016-01-19 Wacker Chemie Ag Rod-type polysilicon having improved breaking properties
JP2016527176A (en) * 2013-08-02 2016-09-08 ワッカー ケミー アクチエンゲゼルシャフトＷａｃｋｅｒ Ｃｈｅｍｉｅ ＡＧ Method for size reduction of silicon and use of size-reduced silicon in lithium ion batteries
CN111921665A (en) * 2020-07-17 2020-11-13 自贡佳源炉业有限公司 Annular material crushing treatment system and method
CN111921665B (en) * 2020-07-17 2023-09-12 自贡佳源炉业有限公司 Annular material crushing treatment system and method
CN112192770A (en) * 2020-10-13 2021-01-08 浙江欧亚光电科技有限公司 Cooling liquid collecting and separating device of diamond wire silicon wafer cutting machine
CN114214723A (en) * 2021-12-14 2022-03-22 山东大学 Preparation method of quasi-intrinsic semi-insulating silicon carbide single crystal

Also Published As

Publication number Publication date
JPH0829924B2 (en) 1996-03-27

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