JPS6412579A - Schottky junction field-effect transistor - Google Patents
Schottky junction field-effect transistorInfo
- Publication number
- JPS6412579A JPS6412579A JP16900687A JP16900687A JPS6412579A JP S6412579 A JPS6412579 A JP S6412579A JP 16900687 A JP16900687 A JP 16900687A JP 16900687 A JP16900687 A JP 16900687A JP S6412579 A JPS6412579 A JP S6412579A
- Authority
- JP
- Japan
- Prior art keywords
- layers
- type
- regions
- ions
- implanted
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16900687A JPS6412579A (en) | 1987-07-07 | 1987-07-07 | Schottky junction field-effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16900687A JPS6412579A (en) | 1987-07-07 | 1987-07-07 | Schottky junction field-effect transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6412579A true JPS6412579A (en) | 1989-01-17 |
Family
ID=15878594
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16900687A Pending JPS6412579A (en) | 1987-07-07 | 1987-07-07 | Schottky junction field-effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6412579A (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5376812A (en) * | 1989-04-12 | 1994-12-27 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device |
US5672890A (en) * | 1994-09-14 | 1997-09-30 | Sumitomo Electric Industries | Field effect transistor with lightly doped drain regions |
-
1987
- 1987-07-07 JP JP16900687A patent/JPS6412579A/ja active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5376812A (en) * | 1989-04-12 | 1994-12-27 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device |
US5672890A (en) * | 1994-09-14 | 1997-09-30 | Sumitomo Electric Industries | Field effect transistor with lightly doped drain regions |
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