JPS6412084B2 - - Google Patents
Info
- Publication number
- JPS6412084B2 JPS6412084B2 JP1721381A JP1721381A JPS6412084B2 JP S6412084 B2 JPS6412084 B2 JP S6412084B2 JP 1721381 A JP1721381 A JP 1721381A JP 1721381 A JP1721381 A JP 1721381A JP S6412084 B2 JPS6412084 B2 JP S6412084B2
- Authority
- JP
- Japan
- Prior art keywords
- mol
- component
- oxide
- composition
- less
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000203 mixture Substances 0.000 claims description 52
- 239000004065 semiconductor Substances 0.000 claims description 49
- 229910052573 porcelain Inorganic materials 0.000 claims description 30
- 239000000919 ceramic Substances 0.000 claims description 18
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 16
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 claims description 13
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 11
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 claims description 10
- 239000010949 copper Substances 0.000 claims description 7
- PLDDOISOJJCEMH-UHFFFAOYSA-N neodymium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Nd+3].[Nd+3] PLDDOISOJJCEMH-UHFFFAOYSA-N 0.000 claims description 7
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims description 6
- ODINCKMPIJJUCX-UHFFFAOYSA-N Calcium oxide Chemical compound [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 claims description 5
- 229910000416 bismuth oxide Inorganic materials 0.000 claims description 4
- LBJNMUFDOHXDFG-UHFFFAOYSA-N copper;hydrate Chemical compound O.[Cu].[Cu] LBJNMUFDOHXDFG-UHFFFAOYSA-N 0.000 claims description 4
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 claims description 4
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims description 4
- XUCJHNOBJLKZNU-UHFFFAOYSA-M dilithium;hydroxide Chemical compound [Li+].[Li+].[OH-] XUCJHNOBJLKZNU-UHFFFAOYSA-M 0.000 claims description 3
- UFQXGXDIJMBKTC-UHFFFAOYSA-N oxostrontium Chemical compound [Sr]=O UFQXGXDIJMBKTC-UHFFFAOYSA-N 0.000 claims 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 claims 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
- 239000004615 ingredient Substances 0.000 claims 1
- 239000003795 chemical substances by application Substances 0.000 description 25
- 229910010413 TiO 2 Inorganic materials 0.000 description 16
- 230000000694 effects Effects 0.000 description 14
- 239000003990 capacitor Substances 0.000 description 13
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 12
- 239000002245 particle Substances 0.000 description 11
- 239000000843 powder Substances 0.000 description 11
- 229910017493 Nd 2 O 3 Inorganic materials 0.000 description 10
- 239000011575 calcium Substances 0.000 description 10
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 9
- 229910002367 SrTiO Inorganic materials 0.000 description 9
- 230000007423 decrease Effects 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 6
- 238000010304 firing Methods 0.000 description 5
- 239000003153 chemical reaction reagent Substances 0.000 description 4
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 229910018068 Li 2 O Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 3
- 239000003985 ceramic capacitor Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 description 2
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000005324 grain boundary diffusion Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 239000006104 solid solution Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 239000001293 FEMA 3089 Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- VAWSWDPVUFTPQO-UHFFFAOYSA-N calcium strontium Chemical compound [Ca].[Sr] VAWSWDPVUFTPQO-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 229910003440 dysprosium oxide Inorganic materials 0.000 description 1
- NLQFUUYNQFMIJW-UHFFFAOYSA-N dysprosium(iii) oxide Chemical compound O=[Dy]O[Dy]=O NLQFUUYNQFMIJW-UHFFFAOYSA-N 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- KTUFCUMIWABKDW-UHFFFAOYSA-N oxo(oxolanthaniooxy)lanthanum Chemical compound O=[La]O[La]=O KTUFCUMIWABKDW-UHFFFAOYSA-N 0.000 description 1
- 239000011297 pine tar Substances 0.000 description 1
- 229940068124 pine tar Drugs 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
Landscapes
- Inorganic Insulating Materials (AREA)
- Ceramic Capacitors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1721381A JPS57132316A (en) | 1981-02-06 | 1981-02-06 | Grain boundary dielectric layer type semiconductor porcelain composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1721381A JPS57132316A (en) | 1981-02-06 | 1981-02-06 | Grain boundary dielectric layer type semiconductor porcelain composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57132316A JPS57132316A (en) | 1982-08-16 |
| JPS6412084B2 true JPS6412084B2 (fr) | 1989-02-28 |
Family
ID=11937660
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1721381A Granted JPS57132316A (en) | 1981-02-06 | 1981-02-06 | Grain boundary dielectric layer type semiconductor porcelain composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57132316A (fr) |
-
1981
- 1981-02-06 JP JP1721381A patent/JPS57132316A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57132316A (en) | 1982-08-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS634339B2 (fr) | ||
| US4861736A (en) | Semiconductive ceramic composition | |
| GB2096128A (en) | Intergranular insulation type dielectric body | |
| EP0128956B1 (fr) | Dielectrique en ceramique de faible cuisson pour condensateurs de compensation de temperature | |
| JP2645815B2 (ja) | 粒界絶縁型半導体磁器 | |
| JPS5820133B2 (ja) | 半導体磁器コンデンサ用磁器およびその製造方法 | |
| JPS6412084B2 (fr) | ||
| JPH0676627A (ja) | 誘電体磁器組成物 | |
| JP2934387B2 (ja) | 半導体磁器の製造方法 | |
| JPH01236514A (ja) | 誘電体磁器材料 | |
| EP0047815B1 (fr) | Compositions céramiques diélectriques présentant des couches isolantes aux joints de grains | |
| JP2689439B2 (ja) | 粒界絶縁型半導体磁器素体 | |
| JPS6351992B2 (fr) | ||
| JPH0785459B2 (ja) | 粒界絶縁型半導体磁器コンデンサ | |
| JPH0361287B2 (fr) | ||
| JPS63289706A (ja) | セラミック形成組成物及びこれを用いた半導体磁器基体と誘電体磁器基体並びにコンデンサー | |
| JP2666262B2 (ja) | ＴｉＯ２を主たる成分とする誘電体セラミクスに用いられる焼結助剤 | |
| JP2666263B2 (ja) | ＴｉＯ２を主たる成分とする誘電体セラミクスに用いられる焼結助剤 | |
| JP2531548B2 (ja) | 温度補償用磁器組成物 | |
| JPH0551127B2 (fr) | ||
| JPH0571538B2 (fr) | ||
| JPS6150371B2 (fr) | ||
| JPH0828128B2 (ja) | 誘電体磁器組成物 | |
| JPS637013B2 (fr) | ||
| JPS6328491B2 (fr) |