JPS6411365A - Semiconductor device and manufacture thereof - Google Patents
Semiconductor device and manufacture thereofInfo
- Publication number
- JPS6411365A JPS6411365A JP16667887A JP16667887A JPS6411365A JP S6411365 A JPS6411365 A JP S6411365A JP 16667887 A JP16667887 A JP 16667887A JP 16667887 A JP16667887 A JP 16667887A JP S6411365 A JPS6411365 A JP S6411365A
- Authority
- JP
- Japan
- Prior art keywords
- electrodes
- electrode
- polysilicon
- transistor
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To reduce the resistance of a base polysilicon and to decrease the size of a transistor by selectively forming a metal film only on the surface of a polysilicon or single crystalline silicon electrode whose surface is electrically isolated by an insulating film for the insulating film. CONSTITUTION:A base polysilicon electrode 7 is formed of one mask pattern, and an emitter polysilicon film 8 and an oxide film 6 are formed by photoetching. The silicon oxide films on the electrodes 8, 7 are removed, and aluminum or aluminum alloy films 12 are, for example, selectively formed only on the electrodes 8, 7. since the films 12 are formed on the electrodes 7, 8, its sheet resistance is reduced to one divided by several tens of a conventional one, its external base resistance is decreased to perform the high speed operation of a transistor. Since metal electrodes are not necessarily formed on the electrode 7, the electrode 7 can be reduced to decrease the size in the transistor.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16667887A JPS6411365A (en) | 1987-07-03 | 1987-07-03 | Semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16667887A JPS6411365A (en) | 1987-07-03 | 1987-07-03 | Semiconductor device and manufacture thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6411365A true JPS6411365A (en) | 1989-01-13 |
Family
ID=15835694
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16667887A Pending JPS6411365A (en) | 1987-07-03 | 1987-07-03 | Semiconductor device and manufacture thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6411365A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01253938A (en) * | 1988-04-01 | 1989-10-11 | Mitsubishi Electric Corp | Semiconductor device and manufacture thereof |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5678121A (en) * | 1979-11-29 | 1981-06-26 | Toshiba Corp | Manufacture of semiconductor device |
JPS6233457A (en) * | 1985-08-06 | 1987-02-13 | Nec Corp | Semiconductor integrated circuit device |
-
1987
- 1987-07-03 JP JP16667887A patent/JPS6411365A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5678121A (en) * | 1979-11-29 | 1981-06-26 | Toshiba Corp | Manufacture of semiconductor device |
JPS6233457A (en) * | 1985-08-06 | 1987-02-13 | Nec Corp | Semiconductor integrated circuit device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01253938A (en) * | 1988-04-01 | 1989-10-11 | Mitsubishi Electric Corp | Semiconductor device and manufacture thereof |
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