JPS6411365A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS6411365A
JPS6411365A JP16667887A JP16667887A JPS6411365A JP S6411365 A JPS6411365 A JP S6411365A JP 16667887 A JP16667887 A JP 16667887A JP 16667887 A JP16667887 A JP 16667887A JP S6411365 A JPS6411365 A JP S6411365A
Authority
JP
Japan
Prior art keywords
electrodes
electrode
polysilicon
transistor
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16667887A
Other languages
Japanese (ja)
Inventor
Nobunori Konaka
Tetsushi Sakai
Takao Amasawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP16667887A priority Critical patent/JPS6411365A/en
Publication of JPS6411365A publication Critical patent/JPS6411365A/en
Pending legal-status Critical Current

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  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To reduce the resistance of a base polysilicon and to decrease the size of a transistor by selectively forming a metal film only on the surface of a polysilicon or single crystalline silicon electrode whose surface is electrically isolated by an insulating film for the insulating film. CONSTITUTION:A base polysilicon electrode 7 is formed of one mask pattern, and an emitter polysilicon film 8 and an oxide film 6 are formed by photoetching. The silicon oxide films on the electrodes 8, 7 are removed, and aluminum or aluminum alloy films 12 are, for example, selectively formed only on the electrodes 8, 7. since the films 12 are formed on the electrodes 7, 8, its sheet resistance is reduced to one divided by several tens of a conventional one, its external base resistance is decreased to perform the high speed operation of a transistor. Since metal electrodes are not necessarily formed on the electrode 7, the electrode 7 can be reduced to decrease the size in the transistor.
JP16667887A 1987-07-03 1987-07-03 Semiconductor device and manufacture thereof Pending JPS6411365A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16667887A JPS6411365A (en) 1987-07-03 1987-07-03 Semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16667887A JPS6411365A (en) 1987-07-03 1987-07-03 Semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS6411365A true JPS6411365A (en) 1989-01-13

Family

ID=15835694

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16667887A Pending JPS6411365A (en) 1987-07-03 1987-07-03 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS6411365A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01253938A (en) * 1988-04-01 1989-10-11 Mitsubishi Electric Corp Semiconductor device and manufacture thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5678121A (en) * 1979-11-29 1981-06-26 Toshiba Corp Manufacture of semiconductor device
JPS6233457A (en) * 1985-08-06 1987-02-13 Nec Corp Semiconductor integrated circuit device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5678121A (en) * 1979-11-29 1981-06-26 Toshiba Corp Manufacture of semiconductor device
JPS6233457A (en) * 1985-08-06 1987-02-13 Nec Corp Semiconductor integrated circuit device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01253938A (en) * 1988-04-01 1989-10-11 Mitsubishi Electric Corp Semiconductor device and manufacture thereof

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