JPS6410108B2 - - Google Patents

Info

Publication number
JPS6410108B2
JPS6410108B2 JP54019353A JP1935379A JPS6410108B2 JP S6410108 B2 JPS6410108 B2 JP S6410108B2 JP 54019353 A JP54019353 A JP 54019353A JP 1935379 A JP1935379 A JP 1935379A JP S6410108 B2 JPS6410108 B2 JP S6410108B2
Authority
JP
Japan
Prior art keywords
field effect
bistable circuit
nonvolatile
information
insulated gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54019353A
Other languages
English (en)
Japanese (ja)
Other versions
JPS55111174A (en
Inventor
Misao Higuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP1935379A priority Critical patent/JPS55111174A/ja
Publication of JPS55111174A publication Critical patent/JPS55111174A/ja
Publication of JPS6410108B2 publication Critical patent/JPS6410108B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Static Random-Access Memory (AREA)
JP1935379A 1979-02-21 1979-02-21 Nonvolatile semiconductor memory device Granted JPS55111174A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1935379A JPS55111174A (en) 1979-02-21 1979-02-21 Nonvolatile semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1935379A JPS55111174A (en) 1979-02-21 1979-02-21 Nonvolatile semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS55111174A JPS55111174A (en) 1980-08-27
JPS6410108B2 true JPS6410108B2 (enrdf_load_stackoverflow) 1989-02-21

Family

ID=11997010

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1935379A Granted JPS55111174A (en) 1979-02-21 1979-02-21 Nonvolatile semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS55111174A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2091510B (en) * 1981-01-09 1984-06-20 Plessey Co Ltd Non-volatile static ram element
US4420821A (en) * 1982-02-19 1983-12-13 International Business Machines Corporation Static RAM with non-volatile back-up storage and method of operation thereof

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5372429A (en) * 1976-12-09 1978-06-27 Toshiba Corp Non-volatile semiconductor memory unit

Also Published As

Publication number Publication date
JPS55111174A (en) 1980-08-27

Similar Documents

Publication Publication Date Title
EP0028935B1 (en) Nonvolatile semiconductor memory circuits
US5465235A (en) Non-volatile memory device with a sense amplifier capable of copying back
US5523971A (en) Non-volatile memory cell for programmable logic device
US4387444A (en) Non-volatile semiconductor memory cells
JPS6025837B2 (ja) 半導体記憶装置
JP2750337B2 (ja) メモリセル及びその読み出し方法
JPH0679440B2 (ja) 不揮発性半導体記憶装置
JPS5953637B2 (ja) 記憶回路
JPS6410108B2 (enrdf_load_stackoverflow)
JPH0581999B2 (enrdf_load_stackoverflow)
JPS6223396B2 (enrdf_load_stackoverflow)
JPS6177197A (ja) 半導体集積回路
EP0377841B1 (en) Semiconductor integrated circuit capable of preventing occurrence of erroneous operation due to noise
JPS59162694A (ja) 半導体メモリ
JPS5818718B2 (ja) 不揮発性メモリ装置
JP4907758B2 (ja) 半導体記憶装置とその制御方法
JPH023180A (ja) Ｍｏｓトランジスタおよびこれを用いた不揮発性スタティックｒａｍ
JPS6233393A (ja) 半導体不揮発性メモリ装置
JPS6233392A (ja) 半導体不揮発性メモリ装置
JPS6023435B2 (ja) 不揮発性半導体記憶装置
JP3937677B2 (ja) 不揮発性半導体記憶装置及びその書きこみ制御方法
JPH01125860A (ja) 不揮発性ランダム・アクセス半導体記憶装置
Saito et al. A 256 bit nonvolatile static random access memory with MNOS memory transistors
JPS6070594A (ja) 不揮発性ランダムアクセス半導体メモリ
GB2054303A (en) Non-volatile semiconductor memory cells