JPS55111174A - Nonvolatile semiconductor memory device - Google Patents

Nonvolatile semiconductor memory device

Info

Publication number
JPS55111174A
JPS55111174A JP1935379A JP1935379A JPS55111174A JP S55111174 A JPS55111174 A JP S55111174A JP 1935379 A JP1935379 A JP 1935379A JP 1935379 A JP1935379 A JP 1935379A JP S55111174 A JPS55111174 A JP S55111174A
Authority
JP
Japan
Prior art keywords
igfet
signal line
bistable circuit
transistors
igfets
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1935379A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6410108B2 (enrdf_load_stackoverflow
Inventor
Misao Higuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP1935379A priority Critical patent/JPS55111174A/ja
Publication of JPS55111174A publication Critical patent/JPS55111174A/ja
Publication of JPS6410108B2 publication Critical patent/JPS6410108B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B10/00Static random access memory [SRAM] devices

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Static Random-Access Memory (AREA)
JP1935379A 1979-02-21 1979-02-21 Nonvolatile semiconductor memory device Granted JPS55111174A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1935379A JPS55111174A (en) 1979-02-21 1979-02-21 Nonvolatile semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1935379A JPS55111174A (en) 1979-02-21 1979-02-21 Nonvolatile semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS55111174A true JPS55111174A (en) 1980-08-27
JPS6410108B2 JPS6410108B2 (enrdf_load_stackoverflow) 1989-02-21

Family

ID=11997010

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1935379A Granted JPS55111174A (en) 1979-02-21 1979-02-21 Nonvolatile semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS55111174A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57117183A (en) * 1981-01-09 1982-07-21 Plessey Overseas Ram element
JPS58143494A (ja) * 1982-02-19 1983-08-26 インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション メモリ・アレイ

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5372429A (en) * 1976-12-09 1978-06-27 Toshiba Corp Non-volatile semiconductor memory unit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5372429A (en) * 1976-12-09 1978-06-27 Toshiba Corp Non-volatile semiconductor memory unit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57117183A (en) * 1981-01-09 1982-07-21 Plessey Overseas Ram element
JPS58143494A (ja) * 1982-02-19 1983-08-26 インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション メモリ・アレイ

Also Published As

Publication number Publication date
JPS6410108B2 (enrdf_load_stackoverflow) 1989-02-21

Similar Documents

Publication Publication Date Title
KR890001093A (ko) 반도체 메모리장치의 충전 및 등화회로
GB2028046A (en) Memory read/write circuits
EP0381404A3 (en) Non-volatile memory
JPS63188887A (ja) 半導体メモリ
US5058062A (en) Nonvolatile semiconductor memory circuit including a reliable sense amplifier
KR880006698A (ko) 씨모오스 반도체 메모리장치의 입출력 회로
US3697775A (en) Three state output logic circuit with bistable inputs
JPS55111174A (en) Nonvolatile semiconductor memory device
KR900002324A (ko) 다분할형 메모리 어레이의 충전등화회로
JPS57143795A (en) Nonvolatile semiconductor storage device
EP0262850B1 (en) Memory cell circuit
US3800297A (en) Non-volatile associative memory
KR900010793A (ko) Cmos 프로그래밍을 지니는 ecl eprom
FR2300397A1 (fr) Montage pour le reglage de l'in
JP2579346B2 (ja) 半導体不揮発性記憶素子
JPS60111394A (ja) メモリセル
JPS56103536A (en) Mis output circuit
JPS57105890A (en) Semiconductor storage device
JPS58141497A (ja) リ−ドオンリメモリ回路
JPS60226090A (ja) スタテイツクランダムアクセスメモリ回路
SU834767A1 (ru) Элемент пам ти
FR2352449A1 (fr) Dispositif logique a trois etats en technologie mos complementaire
JPH0330238B2 (enrdf_load_stackoverflow)
JPH0658760B2 (ja) 半導体集積回路
JPS5694585A (en) Memory transistor circuit