JPS6410104B2 - - Google Patents
Info
- Publication number
- JPS6410104B2 JPS6410104B2 JP54046846A JP4684679A JPS6410104B2 JP S6410104 B2 JPS6410104 B2 JP S6410104B2 JP 54046846 A JP54046846 A JP 54046846A JP 4684679 A JP4684679 A JP 4684679A JP S6410104 B2 JPS6410104 B2 JP S6410104B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- conductivity type
- transistor
- diffusion layer
- source region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 14
- 230000000295 complement effect Effects 0.000 claims description 6
- 230000005669 field effect Effects 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims 2
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 description 16
- 230000010354 integration Effects 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
- H10B99/22—Subject matter not provided for in other groups of this subclass including field-effect components
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4684679A JPS55138867A (en) | 1979-04-17 | 1979-04-17 | Memory device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4684679A JPS55138867A (en) | 1979-04-17 | 1979-04-17 | Memory device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55138867A JPS55138867A (en) | 1980-10-30 |
JPS6410104B2 true JPS6410104B2 (enrdf_load_stackoverflow) | 1989-02-21 |
Family
ID=12758696
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4684679A Granted JPS55138867A (en) | 1979-04-17 | 1979-04-17 | Memory device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55138867A (enrdf_load_stackoverflow) |
-
1979
- 1979-04-17 JP JP4684679A patent/JPS55138867A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS55138867A (en) | 1980-10-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPH01102955A (ja) | Mos型半導体記憶回路装置 | |
JPS6164166A (ja) | 半導体装置 | |
US4799101A (en) | Substrate bias through polysilicon line | |
JPH0770624B2 (ja) | 半導体集積回路 | |
JPS6410104B2 (enrdf_load_stackoverflow) | ||
US5452247A (en) | Three-dimensional static random access memory device for avoiding disconnection among transistors of each memory cell | |
US5598020A (en) | Semiconductor integrated circuit device and method of manufacturing the same | |
JP3089647B2 (ja) | 半導体メモリ | |
US5241204A (en) | Semiconductor memory | |
JPS61222254A (ja) | 半導体記憶装置 | |
JPS60231356A (ja) | 相補形金属酸化膜半導体集積回路装置 | |
JPH0786436A (ja) | スタティックram | |
JPS6343901B2 (enrdf_load_stackoverflow) | ||
JP2587416B2 (ja) | 半導体集積回路装置 | |
JP2663953B2 (ja) | 半導体装置 | |
JPH02270370A (ja) | 半導体メモリ | |
JPH0482264A (ja) | 半導体メモリ | |
JPH0240951A (ja) | 半導体メモリ装置 | |
JPS62263668A (ja) | 半導体集積回路装置 | |
JPH05110035A (ja) | スタテイツクram | |
JPH0244762A (ja) | 半導体記憶装置 | |
JPH04251975A (ja) | 半導体装置 | |
JPH0750746B2 (ja) | 相補型mosスタティックram用メモリセル | |
JPH04115566A (ja) | マスタースライス半導体集積回路 | |
JPS6042622B2 (ja) | 相補型mos集積回路 |