JPS6399580A - トンネル注入制御半導体デバイス - Google Patents
トンネル注入制御半導体デバイスInfo
- Publication number
- JPS6399580A JPS6399580A JP62250183A JP25018387A JPS6399580A JP S6399580 A JPS6399580 A JP S6399580A JP 62250183 A JP62250183 A JP 62250183A JP 25018387 A JP25018387 A JP 25018387A JP S6399580 A JPS6399580 A JP S6399580A
- Authority
- JP
- Japan
- Prior art keywords
- region
- gate
- source
- tunnel
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 20
- 238000002347 injection Methods 0.000 title claims description 22
- 239000007924 injection Substances 0.000 title claims description 22
- 239000012535 impurity Substances 0.000 claims abstract description 24
- 230000000694 effects Effects 0.000 claims abstract description 9
- 238000009826 distribution Methods 0.000 abstract description 9
- 238000009413 insulation Methods 0.000 abstract 2
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 230000004888 barrier function Effects 0.000 description 9
- 230000005684 electric field Effects 0.000 description 4
- 230000006698 induction Effects 0.000 description 4
- 238000005036 potential barrier Methods 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 101150034533 ATIC gene Proteins 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Landscapes
- Bipolar Transistors (AREA)
- Non-Volatile Memory (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62250183A JPS6399580A (ja) | 1987-10-01 | 1987-10-01 | トンネル注入制御半導体デバイス |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62250183A JPS6399580A (ja) | 1987-10-01 | 1987-10-01 | トンネル注入制御半導体デバイス |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55151849A Division JPS5775464A (en) | 1980-10-28 | 1980-10-28 | Semiconductor device controlled by tunnel injection |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6399580A true JPS6399580A (ja) | 1988-04-30 |
| JPH046111B2 JPH046111B2 (enrdf_load_stackoverflow) | 1992-02-04 |
Family
ID=17204049
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62250183A Granted JPS6399580A (ja) | 1987-10-01 | 1987-10-01 | トンネル注入制御半導体デバイス |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6399580A (enrdf_load_stackoverflow) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0256972A (ja) * | 1989-05-18 | 1990-02-26 | Semiconductor Res Found | トンネル注入型走行時間効果三端子半導体装置 |
| JP2007115861A (ja) * | 2005-10-20 | 2007-05-10 | Toyota Motor Corp | へテロ接合トランジスタ |
| JP2014013893A (ja) * | 2012-06-15 | 2014-01-23 | Imec | トンネル電界効果トランジスタデバイスおよびそのデバイスの製造方法 |
| JP2014041974A (ja) * | 2012-08-23 | 2014-03-06 | Toshiba Corp | 半導体装置およびその製造方法 |
| JP2015159252A (ja) * | 2014-02-25 | 2015-09-03 | 富士通株式会社 | 半導体装置 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5343483A (en) * | 1976-10-01 | 1978-04-19 | Handotai Kenkyu Shinkokai | Semiconductor device |
| JPS5357769A (en) * | 1976-11-04 | 1978-05-25 | Mitsubishi Electric Corp | Electrostatic induction transistor |
| JPS55151849A (en) * | 1979-05-17 | 1980-11-26 | Fujitsu Ltd | Digital conference telephone system |
| JPS5775464A (en) * | 1980-10-28 | 1982-05-12 | Semiconductor Res Found | Semiconductor device controlled by tunnel injection |
| JPS6435508A (en) * | 1987-07-31 | 1989-02-06 | Fujikura Ltd | Optical fiber incidence and exit device |
-
1987
- 1987-10-01 JP JP62250183A patent/JPS6399580A/ja active Granted
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5343483A (en) * | 1976-10-01 | 1978-04-19 | Handotai Kenkyu Shinkokai | Semiconductor device |
| JPS5357769A (en) * | 1976-11-04 | 1978-05-25 | Mitsubishi Electric Corp | Electrostatic induction transistor |
| JPS55151849A (en) * | 1979-05-17 | 1980-11-26 | Fujitsu Ltd | Digital conference telephone system |
| JPS5775464A (en) * | 1980-10-28 | 1982-05-12 | Semiconductor Res Found | Semiconductor device controlled by tunnel injection |
| JPS6435508A (en) * | 1987-07-31 | 1989-02-06 | Fujikura Ltd | Optical fiber incidence and exit device |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0256972A (ja) * | 1989-05-18 | 1990-02-26 | Semiconductor Res Found | トンネル注入型走行時間効果三端子半導体装置 |
| JP2007115861A (ja) * | 2005-10-20 | 2007-05-10 | Toyota Motor Corp | へテロ接合トランジスタ |
| JP2014013893A (ja) * | 2012-06-15 | 2014-01-23 | Imec | トンネル電界効果トランジスタデバイスおよびそのデバイスの製造方法 |
| JP2014041974A (ja) * | 2012-08-23 | 2014-03-06 | Toshiba Corp | 半導体装置およびその製造方法 |
| JP2015159252A (ja) * | 2014-02-25 | 2015-09-03 | 富士通株式会社 | 半導体装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH046111B2 (enrdf_load_stackoverflow) | 1992-02-04 |
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