JPS6397248U - - Google Patents
Info
- Publication number
- JPS6397248U JPS6397248U JP1987175722U JP17572287U JPS6397248U JP S6397248 U JPS6397248 U JP S6397248U JP 1987175722 U JP1987175722 U JP 1987175722U JP 17572287 U JP17572287 U JP 17572287U JP S6397248 U JPS6397248 U JP S6397248U
- Authority
- JP
- Japan
- Prior art keywords
- series
- conductive layer
- silicon dioxide
- insulating layer
- terminal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003990 capacitor Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 8
- 235000012239 silicon dioxide Nutrition 0.000 claims 4
- 239000000377 silicon dioxide Substances 0.000 claims 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/94—Metal-insulator-semiconductors, e.g. MOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0805—Capacitors only
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/933,984 US4246502A (en) | 1978-08-16 | 1978-08-16 | Means for coupling incompatible signals to an integrated circuit and for deriving operating supply therefrom |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6397248U true JPS6397248U (US07534539-20090519-C00280.png) | 1988-06-23 |
Family
ID=25464753
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10395679A Pending JPS5558563A (en) | 1978-08-16 | 1979-08-15 | Integrated circuit chip assembling signal source and semiconductor strucutre used therefor |
| JP1987175722U Pending JPS6397248U (US07534539-20090519-C00280.png) | 1978-08-16 | 1987-11-16 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10395679A Pending JPS5558563A (en) | 1978-08-16 | 1979-08-15 | Integrated circuit chip assembling signal source and semiconductor strucutre used therefor |
Country Status (5)
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5811750B2 (ja) * | 1979-06-04 | 1983-03-04 | 株式会社日立製作所 | 高耐圧抵抗素子 |
| JPS57186805A (en) * | 1981-05-14 | 1982-11-17 | Citizen Watch Co Ltd | Integrated circuit for quartz oscillation |
| JPS58119670A (ja) * | 1982-01-11 | 1983-07-16 | Nissan Motor Co Ltd | 半導体装置 |
| US4527180A (en) * | 1983-01-31 | 1985-07-02 | Intel Corporation | MOS Voltage divider structure suitable for higher potential feedback regulation |
| JPS624146U (US07534539-20090519-C00280.png) * | 1986-05-15 | 1987-01-12 | ||
| US5686751A (en) * | 1996-06-28 | 1997-11-11 | Winbond Electronics Corp. | Electrostatic discharge protection circuit triggered by capacitive-coupling |
| US5825079A (en) * | 1997-01-23 | 1998-10-20 | Luminous Intent, Inc. | Semiconductor diodes having low forward conduction voltage drop and low reverse current leakage |
| US5716880A (en) * | 1997-02-20 | 1998-02-10 | Chartered Semiconductor Manufacturing Pte Ltd. | Method for forming vertical polysilicon diode compatible with CMOS/BICMOS formation |
| US6271067B1 (en) | 1998-02-27 | 2001-08-07 | Micron Technology, Inc. | Methods of forming field effect transistors and field effect transistor circuitry |
| EP0987763A1 (en) * | 1998-09-15 | 2000-03-22 | STMicroelectronics S.r.l. | Diode connected transistor and related process of fabrication |
| US6420757B1 (en) | 1999-09-14 | 2002-07-16 | Vram Technologies, Llc | Semiconductor diodes having low forward conduction voltage drop, low reverse current leakage, and high avalanche energy capability |
| US6433370B1 (en) | 2000-02-10 | 2002-08-13 | Vram Technologies, Llc | Method and apparatus for cylindrical semiconductor diodes |
| US6507063B2 (en) * | 2000-04-17 | 2003-01-14 | International Business Machines Corporation | Poly-poly/MOS capacitor having a gate encapsulating first electrode layer |
| US7151036B1 (en) * | 2002-07-29 | 2006-12-19 | Vishay-Siliconix | Precision high-frequency capacitor formed on semiconductor substrate |
| US6538300B1 (en) * | 2000-09-14 | 2003-03-25 | Vishay Intertechnology, Inc. | Precision high-frequency capacitor formed on semiconductor substrate |
| US6580150B1 (en) | 2000-11-13 | 2003-06-17 | Vram Technologies, Llc | Vertical junction field effect semiconductor diodes |
| US6633063B2 (en) * | 2001-05-04 | 2003-10-14 | Semiconductor Components Industries Llc | Low voltage transient voltage suppressor and method of making |
| US6537921B2 (en) | 2001-05-23 | 2003-03-25 | Vram Technologies, Llc | Vertical metal oxide silicon field effect semiconductor diodes |
| CA2461844C (en) | 2001-09-27 | 2011-04-05 | Pioneer Hi-Bred International, Inc. | Phytate polynucleotides and methods of use |
| US6958275B2 (en) * | 2003-03-11 | 2005-10-25 | Integrated Discrete Devices, Llc | MOSFET power transistors and methods |
| CA2634493C (en) * | 2005-12-23 | 2015-05-19 | Francois Gosselin | Capacitor based transformer |
| US20110080760A1 (en) * | 2009-10-02 | 2011-04-07 | Chao-Cheng Lu | Rectifier driving circuit |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51150987A (en) * | 1975-06-10 | 1976-12-24 | Ibm | Cc2c switching capacitor ladder circuit |
| JPS52144278A (en) * | 1976-05-27 | 1977-12-01 | Toshiba Corp | Circuit for protecting input with respect to mos integrated circuit |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3644850A (en) * | 1969-06-11 | 1972-02-22 | Ibm | Integrated circuit band pass filter |
| US3789246A (en) * | 1972-02-14 | 1974-01-29 | Rca Corp | Insulated dual gate field-effect transistor signal translator having means for reducing its sensitivity to supply voltage variations |
| US4163242A (en) * | 1972-11-13 | 1979-07-31 | Siemens Aktiengesellschaft | MOS storage integrated circuit using individual FET elements |
| US3836992A (en) * | 1973-03-16 | 1974-09-17 | Ibm | Electrically erasable floating gate fet memory cell |
| US3979734A (en) * | 1975-06-16 | 1976-09-07 | International Business Machines Corporation | Multiple element charge storage memory cell |
| NL7609587A (nl) * | 1975-09-08 | 1977-03-10 | Ncr Co | Elektrisch afstembare mnos-capaciteit. |
| FR2365858A1 (fr) * | 1976-09-24 | 1978-04-21 | Thomson Csf | Memoire non volatile de longue duree pour signaux rapides |
| FR2365859A1 (fr) * | 1976-09-24 | 1978-04-21 | Thomson Csf | Memoire non volatile pour signaux rapides |
| US4112509A (en) * | 1976-12-27 | 1978-09-05 | Texas Instruments Incorporated | Electrically alterable floating gate semiconductor memory device |
| US4151021A (en) * | 1977-01-26 | 1979-04-24 | Texas Instruments Incorporated | Method of making a high density floating gate electrically programmable ROM |
-
1978
- 1978-08-16 US US05/933,984 patent/US4246502A/en not_active Expired - Lifetime
-
1979
- 1979-03-02 CA CA322,645A patent/CA1123523A/en not_active Expired
- 1979-07-24 DE DE19792929921 patent/DE2929921A1/de not_active Ceased
- 1979-08-09 GB GB7927802A patent/GB2028585B/en not_active Expired
- 1979-08-15 JP JP10395679A patent/JPS5558563A/ja active Pending
-
1987
- 1987-11-16 JP JP1987175722U patent/JPS6397248U/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51150987A (en) * | 1975-06-10 | 1976-12-24 | Ibm | Cc2c switching capacitor ladder circuit |
| JPS52144278A (en) * | 1976-05-27 | 1977-12-01 | Toshiba Corp | Circuit for protecting input with respect to mos integrated circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| DE2929921A1 (de) | 1980-02-28 |
| JPS5558563A (en) | 1980-05-01 |
| GB2028585A (en) | 1980-03-05 |
| US4246502A (en) | 1981-01-20 |
| CA1123523A (en) | 1982-05-11 |
| GB2028585B (en) | 1983-02-16 |
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