JPS639583B2 - - Google Patents

Info

Publication number
JPS639583B2
JPS639583B2 JP11816383A JP11816383A JPS639583B2 JP S639583 B2 JPS639583 B2 JP S639583B2 JP 11816383 A JP11816383 A JP 11816383A JP 11816383 A JP11816383 A JP 11816383A JP S639583 B2 JPS639583 B2 JP S639583B2
Authority
JP
Japan
Prior art keywords
target
targets
substrate
magnetron sputtering
plane
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP11816383A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6013066A (ja
Inventor
Takayuki Nakamura
Hidefumi Asano
Hidefumi Terada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP11816383A priority Critical patent/JPS6013066A/ja
Publication of JPS6013066A publication Critical patent/JPS6013066A/ja
Publication of JPS639583B2 publication Critical patent/JPS639583B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
JP11816383A 1983-07-01 1983-07-01 マグネトロンスパツタリング電極 Granted JPS6013066A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11816383A JPS6013066A (ja) 1983-07-01 1983-07-01 マグネトロンスパツタリング電極

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11816383A JPS6013066A (ja) 1983-07-01 1983-07-01 マグネトロンスパツタリング電極

Publications (2)

Publication Number Publication Date
JPS6013066A JPS6013066A (ja) 1985-01-23
JPS639583B2 true JPS639583B2 (enrdf_load_stackoverflow) 1988-02-29

Family

ID=14729662

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11816383A Granted JPS6013066A (ja) 1983-07-01 1983-07-01 マグネトロンスパツタリング電極

Country Status (1)

Country Link
JP (1) JPS6013066A (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61270369A (ja) * 1985-05-23 1986-11-29 Nec Corp 三極スパツタリングソ−ス
JPS62158863A (ja) * 1985-12-30 1987-07-14 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 被膜形成装置
JP4909523B2 (ja) * 2005-03-30 2012-04-04 株式会社ユーテック スパッタリング装置及びスパッタリング方法
RU2762756C1 (ru) * 2021-04-19 2021-12-22 Федеральное государственное бюджетное образовательное учреждение высшего образования "Воронежский государственный технический университет" Способ получения на подложке тонких пленок ниобата лития

Also Published As

Publication number Publication date
JPS6013066A (ja) 1985-01-23

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