JPH0352535B2 - - Google Patents
Info
- Publication number
- JPH0352535B2 JPH0352535B2 JP4736183A JP4736183A JPH0352535B2 JP H0352535 B2 JPH0352535 B2 JP H0352535B2 JP 4736183 A JP4736183 A JP 4736183A JP 4736183 A JP4736183 A JP 4736183A JP H0352535 B2 JPH0352535 B2 JP H0352535B2
- Authority
- JP
- Japan
- Prior art keywords
- target
- magnetic field
- magnet
- sputtering
- center
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
- H01J37/3458—Electromagnets in particular for cathodic sputtering apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
- H01J37/3408—Planar magnetron sputtering
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electromagnetism (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4736183A JPS59173265A (ja) | 1983-03-22 | 1983-03-22 | スパツタ装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4736183A JPS59173265A (ja) | 1983-03-22 | 1983-03-22 | スパツタ装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59173265A JPS59173265A (ja) | 1984-10-01 |
JPH0352535B2 true JPH0352535B2 (enrdf_load_stackoverflow) | 1991-08-12 |
Family
ID=12772973
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4736183A Granted JPS59173265A (ja) | 1983-03-22 | 1983-03-22 | スパツタ装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59173265A (enrdf_load_stackoverflow) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6260866A (ja) * | 1985-08-02 | 1987-03-17 | Fujitsu Ltd | マグネトロンスパツタ装置 |
GB8909747D0 (en) * | 1989-04-27 | 1989-06-14 | Ionic Coatings Limited | Sputtering apparatus |
US5417833A (en) * | 1993-04-14 | 1995-05-23 | Varian Associates, Inc. | Sputtering apparatus having a rotating magnet array and fixed electromagnets |
GB9606920D0 (en) * | 1996-04-02 | 1996-06-05 | Applied Vision Ltd | Magnet array for magnetrons |
JP4371569B2 (ja) * | 2000-12-25 | 2009-11-25 | 信越化学工業株式会社 | マグネトロンスパッタ装置とそれを用いたフォトマスクブランクの製造方法 |
CN104862653B (zh) * | 2015-05-20 | 2017-07-07 | 魏永强 | 电弧离子镀和高功率脉冲磁控溅射复合的沉积方法 |
CN105803411A (zh) * | 2016-05-11 | 2016-07-27 | 魏永强 | 电弧离子镀和孪生靶双极性高功率脉冲磁控溅射复合方法 |
CN109989039A (zh) * | 2017-12-30 | 2019-07-09 | 魏永强 | 一种组合磁场、组合管和多孔挡板复合的真空沉积方法 |
-
1983
- 1983-03-22 JP JP4736183A patent/JPS59173265A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS59173265A (ja) | 1984-10-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
AU746645C (en) | Method and apparatus for deposition of biaxially textured coatings | |
US5795451A (en) | Sputtering apparatus with a rotating magnet array | |
US4179351A (en) | Cylindrical magnetron sputtering source | |
TWM592875U (zh) | Pvd濺射沉積腔室中的傾斜磁控管 | |
JP2970317B2 (ja) | スパッタリング装置及びスパッタリング方法 | |
JPH0352535B2 (enrdf_load_stackoverflow) | ||
JPH11158625A (ja) | マグネトロンスパッタ成膜装置 | |
JPS61221363A (ja) | スパツタ装置 | |
RU2242821C2 (ru) | Магнетронная распылительная система | |
JP3056222B2 (ja) | スパッタ装置およびスパッタ方法 | |
CN217052380U (zh) | 一种沉积均匀的磁控管 | |
JPS6176673A (ja) | スパツタリング方法 | |
JP2001271163A (ja) | 磁気中性線放電スパッタ装置 | |
CN201336198Y (zh) | 磁路机构及具有该磁路机构的磁控溅射阴极 | |
KR100963413B1 (ko) | 마그네트론 스퍼터링 장치 | |
TW200523394A (en) | Plasma-assisted sputter deposition system | |
JPS63307272A (ja) | イオンビ−ムスパツタ装置 | |
JPS63247366A (ja) | マグネトロンスパツタ装置 | |
JPS5996266A (ja) | スパツタ装置 | |
JPH0641736A (ja) | スパッタリング電極 | |
JPH01240648A (ja) | 多元系薄膜製造装置 | |
JPS62263966A (ja) | マグネトロンスパツタ方法 | |
JPS61207574A (ja) | スパツタ装置 | |
JPH0885871A (ja) | スパッタ法およびスパッタ装置 | |
JPS63293162A (ja) | プラズマ処理装置 |