JPS639386B2 - - Google Patents

Info

Publication number
JPS639386B2
JPS639386B2 JP760979A JP760979A JPS639386B2 JP S639386 B2 JPS639386 B2 JP S639386B2 JP 760979 A JP760979 A JP 760979A JP 760979 A JP760979 A JP 760979A JP S639386 B2 JPS639386 B2 JP S639386B2
Authority
JP
Japan
Prior art keywords
region
gate
type
channel
potential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP760979A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5599772A (en
Inventor
Junichi Nishizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP760979A priority Critical patent/JPS5599772A/ja
Priority to US06/018,774 priority patent/US4364072A/en
Priority to DE2910566A priority patent/DE2910566C2/de
Publication of JPS5599772A publication Critical patent/JPS5599772A/ja
Priority to US06/386,313 priority patent/US4504847A/en
Publication of JPS639386B2 publication Critical patent/JPS639386B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7391—Gated diode structures
    • H01L29/7392—Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP760979A 1978-03-17 1979-01-24 Electrostatic induction type thyristor Granted JPS5599772A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP760979A JPS5599772A (en) 1979-01-24 1979-01-24 Electrostatic induction type thyristor
US06/018,774 US4364072A (en) 1978-03-17 1979-03-08 Static induction type semiconductor device with multiple doped layers for potential modification
DE2910566A DE2910566C2 (de) 1978-03-17 1979-03-17 Statische Induktionshalbleitervorrichtung
US06/386,313 US4504847A (en) 1978-03-17 1982-06-08 Static induction type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP760979A JPS5599772A (en) 1979-01-24 1979-01-24 Electrostatic induction type thyristor

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP5975687A Division JPS6372162A (ja) 1987-03-12 1987-03-12 静電誘導型サイリスタ
JP5975587A Division JPS6372161A (ja) 1987-03-12 1987-03-12 静電誘導型サイリスタ

Publications (2)

Publication Number Publication Date
JPS5599772A JPS5599772A (en) 1980-07-30
JPS639386B2 true JPS639386B2 (US07922777-20110412-C00004.png) 1988-02-29

Family

ID=11670541

Family Applications (1)

Application Number Title Priority Date Filing Date
JP760979A Granted JPS5599772A (en) 1978-03-17 1979-01-24 Electrostatic induction type thyristor

Country Status (1)

Country Link
JP (1) JPS5599772A (US07922777-20110412-C00004.png)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5788771A (en) * 1980-11-21 1982-06-02 Semiconductor Res Found Electrostatic induction thyristor
JPH06101566B2 (ja) * 1984-04-25 1994-12-12 株式会社日立製作所 縦型電界効果トランジスタ
JPH0795592B2 (ja) * 1987-04-14 1995-10-11 株式会社豊田中央研究所 静電誘導型半導体装置
JPH0793421B2 (ja) * 1991-01-09 1995-10-09 東洋電機製造株式会社 静電誘導形半導体素子とその製造方法
US7615802B2 (en) 2003-03-19 2009-11-10 Siced Electronics Development Gmbh & Co. Kg Semiconductor structure comprising a highly doped conductive channel region and method for producing a semiconductor structure

Also Published As

Publication number Publication date
JPS5599772A (en) 1980-07-30

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