JPS6390531A - Epoxy resin composition for semiconductor sealing use - Google Patents
Epoxy resin composition for semiconductor sealing useInfo
- Publication number
- JPS6390531A JPS6390531A JP61234396A JP23439686A JPS6390531A JP S6390531 A JPS6390531 A JP S6390531A JP 61234396 A JP61234396 A JP 61234396A JP 23439686 A JP23439686 A JP 23439686A JP S6390531 A JPS6390531 A JP S6390531A
- Authority
- JP
- Japan
- Prior art keywords
- epoxy resin
- epoxy
- resin
- equivalent
- resin composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000003822 epoxy resin Substances 0.000 title claims abstract description 32
- 229920000647 polyepoxide Polymers 0.000 title claims abstract description 32
- 239000000203 mixture Substances 0.000 title claims abstract description 19
- 239000004065 semiconductor Substances 0.000 title claims description 16
- 238000007789 sealing Methods 0.000 title description 2
- 229920003986 novolac Polymers 0.000 claims abstract description 20
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229920005989 resin Polymers 0.000 claims abstract description 13
- 239000011347 resin Substances 0.000 claims abstract description 13
- 239000004593 Epoxy Substances 0.000 claims abstract description 10
- XLJMAIOERFSOGZ-UHFFFAOYSA-M cyanate Chemical compound [O-]C#N XLJMAIOERFSOGZ-UHFFFAOYSA-M 0.000 claims abstract description 7
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims abstract description 6
- 239000004643 cyanate ester Substances 0.000 claims description 11
- 238000005538 encapsulation Methods 0.000 claims description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 16
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 abstract description 6
- 150000002148 esters Chemical class 0.000 abstract description 6
- 238000002156 mixing Methods 0.000 abstract description 5
- 125000003700 epoxy group Chemical group 0.000 abstract description 4
- -1 benzene 1 Chemical class 0.000 abstract description 2
- CZZYITDELCSZES-UHFFFAOYSA-N diphenylmethane Chemical compound C=1C=CC=CC=1CC1=CC=CC=C1 CZZYITDELCSZES-UHFFFAOYSA-N 0.000 abstract description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 239000003795 chemical substances by application Substances 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 3
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 229930003836 cresol Natural products 0.000 description 3
- 239000012778 molding material Substances 0.000 description 3
- 239000011342 resin composition Substances 0.000 description 3
- MQXNNWDXHFBFEB-UHFFFAOYSA-N 2,2-bis(2-hydroxyphenyl)propane Chemical compound C=1C=CC=C(O)C=1C(C)(C)C1=CC=CC=C1O MQXNNWDXHFBFEB-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 2
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000005350 fused silica glass Substances 0.000 description 2
- 230000009477 glass transition Effects 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000006082 mold release agent Substances 0.000 description 2
- 239000000049 pigment Substances 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000001721 transfer moulding Methods 0.000 description 2
- BUZMJVBOGDBMGI-UHFFFAOYSA-N 1-phenylpropylbenzene Chemical compound C=1C=CC=CC=1C(CC)C1=CC=CC=C1 BUZMJVBOGDBMGI-UHFFFAOYSA-N 0.000 description 1
- XRCKYOARSSVJJM-UHFFFAOYSA-N 2-[[4-[2-[4-(oxiran-2-ylmethyl)phenyl]propan-2-yl]phenyl]methyl]oxirane Chemical compound C=1C=C(CC2OC2)C=CC=1C(C)(C)C(C=C1)=CC=C1CC1CO1 XRCKYOARSSVJJM-UHFFFAOYSA-N 0.000 description 1
- 229930185605 Bisphenol Natural products 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 1
- BRLQWZUYTZBJKN-UHFFFAOYSA-N Epichlorohydrin Chemical compound ClCC1CO1 BRLQWZUYTZBJKN-UHFFFAOYSA-N 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 125000002723 alicyclic group Chemical group 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000004035 construction material Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000006735 epoxidation reaction Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- UFWIBTONFRDIAS-UHFFFAOYSA-N naphthalene-acid Natural products C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 1
- 239000004843 novolac epoxy resin Substances 0.000 description 1
- 125000002971 oxazolyl group Chemical group 0.000 description 1
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N phenylbenzene Natural products C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000012779 reinforcing material Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
- C08G59/62—Alcohols or phenols
- C08G59/621—Phenols
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野)
本発明は、耐熱性および耐水性、電気的特性に優れた半
導体封止用エポキシ樹脂組成物に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an epoxy resin composition for semiconductor encapsulation that has excellent heat resistance, water resistance, and electrical properties.
近年、IC,LSIなどの半導体素子を安価に封止する
ためにセラミック封止や、金属封止に代わり、熱硬化性
樹脂成形材料を用いて樹脂封止する方法が行われるよう
になった。封止用成形材料としては低圧成形用エポキシ
樹脂樹脂が最も一般に用いられているが、最近の樹脂へ
の要求はますます厳しく、特に200℃1ooohrと
いった高温長期保管にも耐えることが求められている。In recent years, in order to inexpensively encapsulate semiconductor elements such as ICs and LSIs, resin encapsulation methods using thermosetting resin molding materials have been used instead of ceramic encapsulation and metal encapsulation. Epoxy resin for low-pressure molding is most commonly used as a molding material for sealing, but recent demands on resins have become increasingly strict, and in particular, resins are required to withstand long-term storage at high temperatures of 200°C and 100 hr. .
エポキシ樹脂Cは耐熱性のメジャーとなるガラス転移温
度がせいぜい150〜175℃であり、200’Cにお
ける長時間放置では樹脂の分解が分解ガスによるA1回
路、特にボンデングバット部の腐食をおこしている。そ
こで、高温長期保管に耐える、高耐熱性で且つ、耐水性
、電気特性に優れた半導体封止用樹脂が得られれば、樹
脂封止半導体の信頼性はさらに向上し、用途が拡大づる
。The glass transition temperature of epoxy resin C, which is a measure of heat resistance, is at most 150 to 175°C, and if left at 200°C for a long time, the resin will decompose and the decomposed gas will cause corrosion of the A1 circuit, especially the bonding butt part. There is. Therefore, if a semiconductor encapsulating resin that can withstand high-temperature long-term storage, has high heat resistance, and has excellent water resistance and electrical properties can be obtained, the reliability of resin-encapsulated semiconductors will further improve and the applications will expand.
エポキシ樹脂硬化物として一般に用いられるのはエポキ
シ樹脂としてビスフェノール型エポキシ樹脂、フェノー
ルノボラック型エポキシ樹脂などがあり、硬化剤として
、酸無水物、アミン類、フェノールノボラック類の伯、
多価シアン酸エステルが用いられる。その中で半導体封
止用としては、フェノールノボラック型エポキシ樹脂と
フェノールノボラックとの組合せが一般的である。又耐
熱性のよい硬化物を19るには、硬化剤として多価シア
ン酸エステル又は多価シアネートを用いる方法があるこ
とは公知であり、塗料、接着剤、積層材料あるいは成形
材Fl等の用途に利用できる。[特開昭50−1320
99@、特開昭54−77637 @、特開昭56−1
12923号など]しかし、この硬化物の性質は耐熱性
に優れているが、耐水性に劣り、電気的性質が良好でな
い。そこで、電気絶縁材料の分野で有用な硬化物を、1
qるための検討がなされ、特開昭56−53127号で
はジシアン酸エステルとヒドロキシ付加化合物重合体に
エポキシ樹脂を配合して成ることを特徴とする硬化性樹
脂組成物を得ている。Epoxy resins commonly used as cured epoxy resins include bisphenol type epoxy resins and phenol novolac type epoxy resins, and as curing agents, acid anhydrides, amines, phenol novolak type epoxy resins,
Polyhydric cyanate ester is used. Among them, a combination of a phenol novolac type epoxy resin and a phenol novolac is commonly used for semiconductor encapsulation. In addition, it is well known that there is a method of using polyvalent cyanate ester or polyvalent cyanate as a curing agent in order to produce a cured product with good heat resistance. available for use. [Unexamined Japanese Patent Publication No. 50-1320
99@, JP 54-77637 @, JP 56-1
No. 12923, etc.] However, although this cured product has excellent heat resistance, it has poor water resistance and poor electrical properties. Therefore, we have selected 1 cured product that is useful in the field of electrical insulating materials.
In Japanese Patent Application Laid-Open No. 56-53127, a curable resin composition was obtained which is characterized by blending an epoxy resin with a polymer of a dicyanate ester and a hydroxyl addition compound.
この組成物は耐熱性、耐熱衝撃性、電気特性、耐水性、
耐薬品性に優れ、電気工業分野では電動機、変圧器、抵
抗器硝子、ブッシング、スペーサー等の用途に、又、土
木建築材料、自動車工業材料等にも利用できる。しかし
、半導体封止用樹脂として利用すると、耐水性、電気特
性が不充分であり本発明の目的を達成させるものではな
かった。This composition has excellent heat resistance, thermal shock resistance, electrical properties, water resistance,
It has excellent chemical resistance and can be used in electric motors, transformers, resistor glass, bushings, spacers, etc. in the electrical industry, as well as civil engineering and construction materials, automobile industry materials, etc. However, when used as a resin for semiconductor encapsulation, the water resistance and electrical properties were insufficient, and the object of the present invention could not be achieved.
(発明の目的)
本発明は従来、耐熱性、耐水性の乏しかったエポキシ樹
脂の母格構造に耐熱性に優れた分子構造を導入し、耐水
性とのバランスのとれた硬化物を(qんとして研究した
結果、エポキシ樹脂と7エノールノボラツクの硬化物中
に多価シアン酸エステルとエポキシ樹脂の反応によるオ
キサゾール環を形成し、ガラス転位温度が200℃以上
の安定した耐熱性が得られるとの知見を得、更にフェノ
ールノボラックと多価シアン酸エステルの配合比により
、耐水性、電気特性の良好なる範囲を見い出した。更に
この知見に基づき、半導体封止用材料として最適な特性
が得られる組成について種々研究を進めて本発明を完成
するに至った。その目的とするところは、耐水性および
諸特性を劣化させることなく、耐熱性が著しく優れた硬
化物を与える半導体1」重用エポキシ樹脂組成物成物を
12供するにある。(Purpose of the invention) The present invention introduces a molecular structure with excellent heat resistance into the matrix structure of epoxy resin, which has conventionally had poor heat resistance and water resistance, and creates a cured product with a good balance of water resistance. As a result of research, it was found that oxazole rings are formed in the cured product of epoxy resin and 7-enol novolak by the reaction between polyhydric cyanate ester and epoxy resin, and stable heat resistance with a glass transition temperature of 200°C or higher can be obtained. Furthermore, by adjusting the blending ratio of phenol novolak and polyhydric cyanate ester, we found a good range of water resistance and electrical properties.Furthermore, based on this knowledge, we were able to obtain optimal properties as a material for semiconductor encapsulation. The present invention was completed after carrying out various researches on the composition.The aim is to create a semiconductor 1" heavy-duty epoxy resin that provides a cured product with extremely excellent heat resistance without deteriorating water resistance or other properties. The composition consists of 12 samples.
本発明は、エポキシ樹脂にフェノールノボラック樹脂及
び多価シアン酸エステルを配合してなることを特徴とす
る半導体封止用エポキシ樹脂組成物に関するものであり
、エポキシ樹脂のエポキシ基当量が1に対して、フェノ
ールノボラック樹脂の水酸基当量が0.4〜1.01多
価シアン酸エステルのシアナート当量が0.1〜0.6
になるように配合することを特徴とする半導体封止用エ
ポキシ樹脂組成物に関するものである。The present invention relates to an epoxy resin composition for semiconductor encapsulation characterized by blending an epoxy resin with a phenol novolak resin and a polyhydric cyanate ester, and in which the epoxy group equivalent of the epoxy resin is 1 to 1. , the hydroxyl equivalent of the phenol novolak resin is 0.4 to 1.01, and the cyanate equivalent of the polyhydric cyanate ester is 0.1 to 0.6
The present invention relates to an epoxy resin composition for semiconductor encapsulation, which is characterized in that it is blended so as to have the following properties.
本発明において用いられるエポキシ樹脂は、1分子中に
エポキシ基を2個以上含有する化合物である。例えば次
に挙げるものである。The epoxy resin used in the present invention is a compound containing two or more epoxy groups in one molecule. Examples include the following:
2.2.ビス(4−グリシジルフェニル)プロパン、エ
ピクロルヒドリンとビスフェノールAの縮合体等のエピ
−ビス型エポキシ樹脂類、ノボラックエポキシ樹脂類、
3−4−エポキシシクロへキシルメチル−3°、4°、
エポキシシクロヘキザンカルボキシレート等の脂環式エ
ポキシ樹脂類等類である。2.2. Epi-bis type epoxy resins such as bis(4-glycidylphenyl)propane, a condensate of epichlorohydrin and bisphenol A, novolac epoxy resins,
3-4-epoxycyclohexylmethyl-3°, 4°,
These include alicyclic epoxy resins such as epoxycyclohexane carboxylate.
本発明に用いられるフェノールノボラック樹脂としでは
フェノール又はクレゾールとホルムアルデヒドの縮合体
として得られる3核体以上の樹脂である。本発明に用い
る多価シアン酸エステルは一般式NC0−R−ONGで
表わされる化合物であり、前記Rは例えばベンゼン、ナ
フタレンジフェニル、ジフェニルメタン、ジフェニルケ
トン、ジフェニルプロパン等芳香族残塁である。The phenol novolac resin used in the present invention is a trinuclear or more resin obtained as a condensate of phenol or cresol and formaldehyde. The polyhydric cyanate ester used in the present invention is a compound represented by the general formula NCO-R-ONG, where R is an aromatic residue such as benzene, naphthalene diphenyl, diphenylmethane, diphenylketone, diphenylpropane, etc.
上記一般式で表わされるジシアン酸エステルの好適な例
としては、1−3−または1.4.ジシアナートベンゼ
ン、4.4°−ジシアナートジフェニルメタン、4−4
°−ジシアナートジフェニルケトンなどが挙げられる。Suitable examples of the dicyanate ester represented by the above general formula include 1-3- or 1.4-. dicyanatobenzene, 4.4°-dicyanatodiphenylmethane, 4-4
Examples include °-dicyanate diphenyl ketone.
本発明のエポキシ樹脂組成物の製造は、エポキシ樹脂の
エポキシ基当量が1に対して、フェノールノボラックの
水M基当母が0.4〜1.O1多価シアン酸エステルの
シアナート当量比が0.1〜0.6になるように配合し
、触rSおよび補強材、充填材、難燃剤、着色剤等を添
加し、熱ロールで溶融混練し、板状に冷却したのち、粉
砕粒状化して得ることが出来る。In the production of the epoxy resin composition of the present invention, the epoxy group equivalent of the epoxy resin is 1, and the water M group equivalent of the phenol novolak is 0.4 to 1. The O1 polyhydric cyanate ester is blended so that the cyanate equivalent ratio is 0.1 to 0.6, added with esters, reinforcing materials, fillers, flame retardants, colorants, etc., and melt-kneaded with hot rolls. It can be obtained by cooling it into a plate shape and then pulverizing it into granules.
本発明の樹脂組成物は150〜200°Cで加熱して硬
化し、IC,LSIなどの半導体素子をトランスファー
成形、インジェクション成形により、封止することが出
来る。The resin composition of the present invention is cured by heating at 150 to 200°C, and can be used to seal semiconductor elements such as ICs and LSIs by transfer molding or injection molding.
本発明により、1■られた樹脂封止半導体は耐熱性、耐
水性、電気特性にすぐれた特性を有するものである。本
発明の樹脂組成で、エポキシ樹脂のエポキシ化(2)1
に対しフェノールノボラックの水Mlが0.4以下で多
価シアン酸エステルをのシアナート当量が0.6以上の
配合からなるものの硬化物は、耐水性、電気特性で目標
とする特性値が1qられず、又、エポキシ当量1に対し
、水酸基が1゜0以上でシアナート光示が0.1以下の
配合からなる乙のの硬化物は、耐熱性が不充分であり、
目的とするものが17られない。The resin-sealed semiconductor produced by the present invention has excellent heat resistance, water resistance, and electrical properties. Epoxidation of epoxy resin with the resin composition of the present invention (2) 1
On the other hand, a cured product composed of a phenol novolac with a water Ml of 0.4 or less and a polyhydric cyanate ester with a cyanate equivalent of 0.6 or more has the target characteristic values of water resistance and electrical properties of 1q. Second, the cured product containing a mixture of hydroxyl groups of 1°0 or more and cyanate photoindication of 0.1 or less per 1 epoxy equivalent has insufficient heat resistance.
I can't find what I'm aiming for.
(発明の効果〕
本発明は、高耐熱性で、しかも耐水性、電気特性に優れ
たエポキシ樹脂組成物を提供するものであり、本発明の
エポキシ樹脂組成物で封止されたICは、従来のものと
比べて耐熱44が極めて優れており、IC,LSIのプ
ラスチック化をさらに促進し、IC,LSIの汎用化に
寄り−する効果は非常に大きい。(Effects of the Invention) The present invention provides an epoxy resin composition that is highly heat resistant and has excellent water resistance and electrical properties. The heat resistance 44 is extremely superior to that of conventional plastics, which has a great effect on further promoting the use of plastics in ICs and LSIs and making ICs and LSIs more versatile.
以下、半導体封止用成形材料での検問例で説明する。実
施例及び比較例で用いた原料は次の通りである。又配合
における部は全て重合部である。The following will explain an example of an inspection using a molding material for semiconductor encapsulation. The raw materials used in the Examples and Comparative Examples are as follows. Also, all parts in the formulation are polymerized parts.
実施例1
エポキシクレゾールノボラック(エポキシ当量195)
19部とフェノールノボラック(水酸基当量104)
7部、2.2ビス(ヒドロキシフェニル)プロパン
(シアナート化ffi 139) 4部、トリエヂル
アミン0.2部及び溶融シリカ65部、エポキシシラン
処理剤0.3部、臭化エポキシ2部、三酸化アンチモン
2部、及び離型剤、顔料を混合し加熱ロールを90°C
にて加熱′11練し、冷却後粉砕して粉末材料とした。Example 1 Epoxy cresol novolac (epoxy equivalent weight 195)
19 parts and phenol novolac (hydroxyl equivalent: 104)
7 parts, 2.2 parts of bis(hydroxyphenyl)propane (cyanated ffi 139), 0.2 parts of triedylamine and 65 parts of fused silica, 0.3 parts of epoxy silane treatment agent, 2 parts of epoxy bromide, antimony trioxide Mix 2 parts, mold release agent, and pigment and heat roll to 90°C.
The mixture was heated and kneaded for 11 minutes, cooled, and then ground to obtain a powder material.
実施例2
エポキシクレゾールノボラック18.5部とフェノール
ノボラック5.0部、2.2.ビス(ヒドロキシフェニ
ル)プロパン6.5部、トリエチルアミン0.2部及び
溶融シリカ65部、エポキシシラン処理剤0.3部、臭
化エポキシ2部、三酸化7ンチモン2部、及び離型剤、
顔料を混合し、実施例1と同様にして、粉末材料をjq
た。Example 2 18.5 parts of epoxy cresol novolak and 5.0 parts of phenol novolac, 2.2. 6.5 parts of bis(hydroxyphenyl)propane, 0.2 parts of triethylamine and 65 parts of fused silica, 0.3 parts of epoxy silane treatment agent, 2 parts of brominated epoxy, 2 parts of 7thimony trioxide, and a mold release agent,
Mix the pigments and add the powder material to jq as in Example 1.
Ta.
比較例3〜6
第1表に示す組成配合量にて、実施例1と同様に処理し
て、粉末材料を得た。Comparative Examples 3 to 6 Powder materials were obtained by processing in the same manner as in Example 1 using the compositions and amounts shown in Table 1.
実施例1〜2及び比較例3〜6で得た粉末材料をトラン
スファー成形法により、物性値及びアルミ模擬素子を封
止したテスト用ICによる耐熱性試験結果を第1表に併
記した。The powder materials obtained in Examples 1 to 2 and Comparative Examples 3 to 6 were subjected to transfer molding, and the physical properties and heat resistance test results using test ICs in which aluminum simulating elements were sealed are also listed in Table 1.
本発明によるエポキシ樹脂とフェノールノボラックと多
価シアン酸エステルをの配合量を用いた場合、他の配合
量に比べて極めて優れた耐熱性と、耐水性、電気特性と
のバランスのとれた半導体特性を示すことか判った。When using the blended amounts of the epoxy resin, phenol novolak, and polycyanate ester according to the present invention, semiconductor properties with a well-balanced balance of heat resistance, water resistance, and electrical properties are achieved compared to other blended amounts. I found out that it shows.
Claims (1)
酸エステルからなる組成物であって、エポキシ樹脂のエ
ポキシ当量が1に対してフェノールノボラック樹脂の水
酸基当量が0.4〜1.0、多価シアン酸エステルのシ
アナート当量が0.1〜0.6になるように配合するこ
とを特徴とする半導体封止用エポキシ樹脂組成物。A composition consisting of an epoxy resin, a phenol novolak resin, and a polyhydric cyanate ester, wherein the epoxy resin has an epoxy equivalent of 1 and the phenol novolac resin has a hydroxyl equivalent of 0.4 to 1.0, and the polyhydric cyanate ester An epoxy resin composition for semiconductor encapsulation, characterized in that it is blended so that the cyanate equivalent of is 0.1 to 0.6.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61234396A JPH0615603B2 (en) | 1986-10-03 | 1986-10-03 | Epoxy resin composition for semiconductor encapsulation |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61234396A JPH0615603B2 (en) | 1986-10-03 | 1986-10-03 | Epoxy resin composition for semiconductor encapsulation |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6390531A true JPS6390531A (en) | 1988-04-21 |
JPH0615603B2 JPH0615603B2 (en) | 1994-03-02 |
Family
ID=16970341
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP61234396A Expired - Fee Related JPH0615603B2 (en) | 1986-10-03 | 1986-10-03 | Epoxy resin composition for semiconductor encapsulation |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0615603B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0916688A1 (en) * | 1997-11-11 | 1999-05-19 | Sumitomo Chemical Company, Limited | Polyfunctional cyanate resin composition and resin-encapsulated type semiconductor device |
US6437057B1 (en) * | 1999-02-10 | 2002-08-20 | Lonza Ag | Novolak cyanate blends |
WO2009157147A1 (en) * | 2008-06-27 | 2009-12-30 | 株式会社Adeka | One-liquid type cyanate epoxy composite resin composition |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6413915B2 (en) | 2015-05-11 | 2018-10-31 | 信越化学工業株式会社 | Semiconductor sealing resin composition and semiconductor device provided with cured product thereof |
JP6493287B2 (en) | 2015-05-20 | 2019-04-03 | 信越化学工業株式会社 | Liquid resin composition |
US11028269B2 (en) | 2017-05-19 | 2021-06-08 | Shin-Etsu Chemical Co., Ltd | Silicone-modified epoxy resin composition and semiconductor device |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5050667A (en) * | 1973-09-08 | 1975-05-07 | ||
JPS50132099A (en) * | 1974-04-08 | 1975-10-18 | ||
JPS56106949A (en) * | 1980-01-29 | 1981-08-25 | Mitsubishi Gas Chem Co Inc | Curable resin composition |
JPH0352770A (en) * | 1989-07-19 | 1991-03-06 | Babcock Hitachi Kk | Hot wire type arc welding equipment |
-
1986
- 1986-10-03 JP JP61234396A patent/JPH0615603B2/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5050667A (en) * | 1973-09-08 | 1975-05-07 | ||
JPS50132099A (en) * | 1974-04-08 | 1975-10-18 | ||
JPS56106949A (en) * | 1980-01-29 | 1981-08-25 | Mitsubishi Gas Chem Co Inc | Curable resin composition |
JPH0352770A (en) * | 1989-07-19 | 1991-03-06 | Babcock Hitachi Kk | Hot wire type arc welding equipment |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0916688A1 (en) * | 1997-11-11 | 1999-05-19 | Sumitomo Chemical Company, Limited | Polyfunctional cyanate resin composition and resin-encapsulated type semiconductor device |
US6437057B1 (en) * | 1999-02-10 | 2002-08-20 | Lonza Ag | Novolak cyanate blends |
WO2009157147A1 (en) * | 2008-06-27 | 2009-12-30 | 株式会社Adeka | One-liquid type cyanate epoxy composite resin composition |
JP2010006991A (en) * | 2008-06-27 | 2010-01-14 | Adeka Corp | One-component cyanate-epoxy composite resin composition |
US8911586B2 (en) | 2008-06-27 | 2014-12-16 | Adeka Corporation | One liquid type cyanate-epoxy composite resin composition |
TWI465477B (en) * | 2008-06-27 | 2014-12-21 | Adeka Corp | A liquid cyanate ester - epoxy composite resin composition |
Also Published As
Publication number | Publication date |
---|---|
JPH0615603B2 (en) | 1994-03-02 |
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