JPS6389228U - - Google Patents
Info
- Publication number
- JPS6389228U JPS6389228U JP18443086U JP18443086U JPS6389228U JP S6389228 U JPS6389228 U JP S6389228U JP 18443086 U JP18443086 U JP 18443086U JP 18443086 U JP18443086 U JP 18443086U JP S6389228 U JPS6389228 U JP S6389228U
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- epitaxial growth
- molecular beam
- beam epitaxial
- spacer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims description 27
- 125000006850 spacer group Chemical group 0.000 claims description 6
- 238000010586 diagram Methods 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- 239000000956 alloy Substances 0.000 claims 1
- 229910045601 alloy Inorganic materials 0.000 claims 1
- 230000008018 melting Effects 0.000 claims 1
- 238000002844 melting Methods 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 239000011733 molybdenum Substances 0.000 claims 1
- 229910052594 sapphire Inorganic materials 0.000 claims 1
- 239000010980 sapphire Substances 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
Landscapes
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18443086U JPH034024Y2 (enExample) | 1986-11-29 | 1986-11-29 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18443086U JPH034024Y2 (enExample) | 1986-11-29 | 1986-11-29 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6389228U true JPS6389228U (enExample) | 1988-06-10 |
| JPH034024Y2 JPH034024Y2 (enExample) | 1991-02-01 |
Family
ID=31132095
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18443086U Expired JPH034024Y2 (enExample) | 1986-11-29 | 1986-11-29 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH034024Y2 (enExample) |
-
1986
- 1986-11-29 JP JP18443086U patent/JPH034024Y2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPH034024Y2 (enExample) | 1991-02-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS62172713A (ja) | 半導体装置の製造方法 | |
| FR2711842A1 (fr) | Dispositif semiconducteur composé à hétérojonction, notamment un transistor à effet de champ, et son procédé de production. | |
| JPS6389228U (enExample) | ||
| GB2269268A (en) | Semiconductor-slice cleaving | |
| JP2009081285A (ja) | 基板およびその製造方法 | |
| JPS5893222A (ja) | 半導体単結晶膜の製造方法 | |
| JPH0983072A (ja) | 半導体表面処理用治具 | |
| JP3826581B2 (ja) | 半導体基板および半導体基板の製造方法 | |
| JPH0669326A (ja) | ウェハホルダー | |
| JP3740269B2 (ja) | 半導体発光装置の製造方法 | |
| JPH11289107A (ja) | 角形エピタキシャルウェハ | |
| JPH0652712B2 (ja) | 半導体装置 | |
| JPS63150911A (ja) | 半導体装置の製造方法 | |
| JPH09186276A (ja) | ダイヤモンドヒートシンクおよびその製造方法 | |
| JPS6430287A (en) | Semiconductor laser device and manufacture thereof | |
| JPS59480B2 (ja) | 化合物半導体の気相成長法 | |
| JPS5832561Y2 (ja) | 軽量強化耕うん爪 | |
| JPS6193616A (ja) | 分子線エピタキシヤル結晶成長装置 | |
| RU98121491A (ru) | Полевой эмиссионный катод и способ его изготовления | |
| JPS62179112A (ja) | Ｓｏｉ構造形成方法 | |
| JPH0136978B2 (enExample) | ||
| JPH0562901A (ja) | 膜厚測定用基板保持装置 | |
| JP2004039947A (ja) | 半導体レーザ及びその製造方法 | |
| JPH0377654B2 (enExample) | ||
| JPH05109875A (ja) | 分子線結晶成長用基板ホルダおよび分子線結晶成長法 |