JPS6386196A - 半導体記憶装置 - Google Patents
半導体記憶装置Info
- Publication number
- JPS6386196A JPS6386196A JP61231803A JP23180386A JPS6386196A JP S6386196 A JPS6386196 A JP S6386196A JP 61231803 A JP61231803 A JP 61231803A JP 23180386 A JP23180386 A JP 23180386A JP S6386196 A JPS6386196 A JP S6386196A
- Authority
- JP
- Japan
- Prior art keywords
- column
- mos transistor
- write
- read
- memory cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
Landscapes
- Read Only Memory (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61231803A JPS6386196A (ja) | 1986-09-30 | 1986-09-30 | 半導体記憶装置 |
| US07/094,706 US5050124A (en) | 1986-09-30 | 1987-09-09 | Semiconductor memory having load transistor circuit |
| EP87113251A EP0263318B1 (en) | 1986-09-30 | 1987-09-10 | Semiconductor memory |
| DE8787113251T DE3784298T2 (de) | 1986-09-30 | 1987-09-10 | Halbleiterspeicher. |
| KR1019870010907A KR900008189B1 (ko) | 1986-09-30 | 1987-09-30 | 반도체 기억장치 |
| US07/447,391 US4954991A (en) | 1986-09-30 | 1989-12-07 | Semiconductor memory with p-channel load transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61231803A JPS6386196A (ja) | 1986-09-30 | 1986-09-30 | 半導体記憶装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6386196A true JPS6386196A (ja) | 1988-04-16 |
| JPH059879B2 JPH059879B2 (enExample) | 1993-02-08 |
Family
ID=16929265
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61231803A Granted JPS6386196A (ja) | 1986-09-30 | 1986-09-30 | 半導体記憶装置 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPS6386196A (enExample) |
| KR (1) | KR900008189B1 (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5229963A (en) * | 1988-09-21 | 1993-07-20 | Kabushiki Kaisha Toshiba | Semiconductor nonvolatile memory device for controlling the potentials on bit lines |
| JP2013164886A (ja) * | 2012-02-10 | 2013-08-22 | Toppan Printing Co Ltd | 半導体集積回路 |
| JP2015533008A (ja) * | 2012-09-14 | 2015-11-16 | マイクロン テクノロジー, インク. | 不揮発性メモリのための相補型デコーディング |
-
1986
- 1986-09-30 JP JP61231803A patent/JPS6386196A/ja active Granted
-
1987
- 1987-09-30 KR KR1019870010907A patent/KR900008189B1/ko not_active Expired
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5229963A (en) * | 1988-09-21 | 1993-07-20 | Kabushiki Kaisha Toshiba | Semiconductor nonvolatile memory device for controlling the potentials on bit lines |
| JP2013164886A (ja) * | 2012-02-10 | 2013-08-22 | Toppan Printing Co Ltd | 半導体集積回路 |
| JP2015533008A (ja) * | 2012-09-14 | 2015-11-16 | マイクロン テクノロジー, インク. | 不揮発性メモリのための相補型デコーディング |
Also Published As
| Publication number | Publication date |
|---|---|
| KR880004489A (ko) | 1988-06-07 |
| JPH059879B2 (enExample) | 1993-02-08 |
| KR900008189B1 (ko) | 1990-11-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |