KR900008189B1 - 반도체 기억장치 - Google Patents

반도체 기억장치 Download PDF

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Publication number
KR900008189B1
KR900008189B1 KR1019870010907A KR870010907A KR900008189B1 KR 900008189 B1 KR900008189 B1 KR 900008189B1 KR 1019870010907 A KR1019870010907 A KR 1019870010907A KR 870010907 A KR870010907 A KR 870010907A KR 900008189 B1 KR900008189 B1 KR 900008189B1
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KR
South Korea
Prior art keywords
column
mos transistor
channel
recording
signal
Prior art date
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Expired
Application number
KR1019870010907A
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English (en)
Korean (ko)
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KR880004489A (ko
Inventor
유키히로 사에키
도시마사 나카무라
Original Assignee
가부시키가이샤 도시바
아오이 죠이치
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Application filed by 가부시키가이샤 도시바, 아오이 죠이치 filed Critical 가부시키가이샤 도시바
Publication of KR880004489A publication Critical patent/KR880004489A/ko
Application granted granted Critical
Publication of KR900008189B1 publication Critical patent/KR900008189B1/ko
Expired legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards

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  • Read Only Memory (AREA)
KR1019870010907A 1986-09-30 1987-09-30 반도체 기억장치 Expired KR900008189B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP61231803A JPS6386196A (ja) 1986-09-30 1986-09-30 半導体記憶装置
JP231803 1986-09-30

Publications (2)

Publication Number Publication Date
KR880004489A KR880004489A (ko) 1988-06-07
KR900008189B1 true KR900008189B1 (ko) 1990-11-05

Family

ID=16929265

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870010907A Expired KR900008189B1 (ko) 1986-09-30 1987-09-30 반도체 기억장치

Country Status (2)

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JP (1) JPS6386196A (enExample)
KR (1) KR900008189B1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5229963A (en) * 1988-09-21 1993-07-20 Kabushiki Kaisha Toshiba Semiconductor nonvolatile memory device for controlling the potentials on bit lines
JP5966402B2 (ja) * 2012-02-10 2016-08-10 凸版印刷株式会社 半導体集積回路
US9007822B2 (en) * 2012-09-14 2015-04-14 Micron Technology, Inc. Complementary decoding for non-volatile memory

Also Published As

Publication number Publication date
JPS6386196A (ja) 1988-04-16
KR880004489A (ko) 1988-06-07
JPH059879B2 (enExample) 1993-02-08

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