JPS6384964U - - Google Patents

Info

Publication number

JPS6384964U

JPS6384964U JP17895486U JP17895486U JPS6384964U JP S6384964 U JPS6384964 U JP S6384964U JP 17895486 U JP17895486 U JP 17895486U JP 17895486 U JP17895486 U JP 17895486U JP S6384964 U JPS6384964 U JP S6384964U

Authority

JP

Japan

Prior art keywords

semiconductor device

gate electrode

read

boundary

mos transistors

Prior art date

1986-11-20

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Pending

Links

• Espacenet
• Global Dossier
• Discuss

• 239000004065 semiconductor Substances 0.000 claims description 5
• 238000009792 diffusion process Methods 0.000 claims description 2
• 238000010586 diagram Methods 0.000 description 3
• XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
• 229910052782 aluminium Inorganic materials 0.000 description 1
• 239000011229 interlayer Substances 0.000 description 1
• 239000010410 layer Substances 0.000 description 1
• 238000004519 manufacturing process Methods 0.000 description 1
• 239000000758 substrate Substances 0.000 description 1