JPS6384013A - 半導体結晶層の製造方法 - Google Patents

半導体結晶層の製造方法

Info

Publication number
JPS6384013A
JPS6384013A JP61227185A JP22718586A JPS6384013A JP S6384013 A JPS6384013 A JP S6384013A JP 61227185 A JP61227185 A JP 61227185A JP 22718586 A JP22718586 A JP 22718586A JP S6384013 A JPS6384013 A JP S6384013A
Authority
JP
Japan
Prior art keywords
layer
semiconductor
crystal layer
semiconductor crystal
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61227185A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0525384B2 (enExample
Inventor
Tomoyasu Inoue
井上　知泰
Toshihiko Hamazaki
浜崎　利彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP61227185A priority Critical patent/JPS6384013A/ja
Publication of JPS6384013A publication Critical patent/JPS6384013A/ja
Publication of JPH0525384B2 publication Critical patent/JPH0525384B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Recrystallisation Techniques (AREA)
JP61227185A 1986-09-27 1986-09-27 半導体結晶層の製造方法 Granted JPS6384013A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61227185A JPS6384013A (ja) 1986-09-27 1986-09-27 半導体結晶層の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61227185A JPS6384013A (ja) 1986-09-27 1986-09-27 半導体結晶層の製造方法

Publications (2)

Publication Number Publication Date
JPS6384013A true JPS6384013A (ja) 1988-04-14
JPH0525384B2 JPH0525384B2 (enExample) 1993-04-12

Family

ID=16856820

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61227185A Granted JPS6384013A (ja) 1986-09-27 1986-09-27 半導体結晶層の製造方法

Country Status (1)

Country Link
JP (1) JPS6384013A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010166035A (ja) * 2008-12-15 2010-07-29 Semiconductor Energy Lab Co Ltd Ｓｏｉ基板の作製方法、半導体装置の作製方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5659694A (en) * 1979-10-18 1981-05-23 Agency Of Ind Science & Technol Manufacture of thin film

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5659694A (en) * 1979-10-18 1981-05-23 Agency Of Ind Science & Technol Manufacture of thin film

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010166035A (ja) * 2008-12-15 2010-07-29 Semiconductor Energy Lab Co Ltd Ｓｏｉ基板の作製方法、半導体装置の作製方法

Also Published As

Publication number Publication date
JPH0525384B2 (enExample) 1993-04-12

Similar Documents

Publication Publication Date Title
US5310446A (en) Method for producing semiconductor film
JPH0517693B2 (enExample)
JP2779033B2 (ja) 多結晶Ｓｉ薄膜の成長方法
JPH0525384B2 (enExample)
JPS61174621A (ja) 半導体薄膜結晶の製造方法
JPS6147627A (ja) 半導体装置の製造方法
JP2000091604A (ja) 多結晶半導体膜、光電変換素子及びこれらの製造法
JPS5939791A (ja) 単結晶の製造方法
JPS5983993A (ja) 単結晶半導体層の成長方法
JPS58132919A (ja) 半導体装置の製造方法
JPH0334847B2 (enExample)
JP3210410B2 (ja) 半導体装置およびその製造方法
JPH0236050B2 (enExample)
JPS63174308A (ja) 半導体薄膜結晶層の製造方法
JP2526380B2 (ja) 多層半導体基板の製造方法
JPH01264215A (ja) 半導体装置の製造方法
JPH0779082B2 (ja) 半導体単結晶層の製造方法
JPS6126598A (ja) ゲルマニウム薄膜結晶の製造方法
JPS6015916A (ja) 単結晶薄膜の製造方法
JPS5939022A (ja) 半導体単結晶薄膜の製造方法
JPS6233415A (ja) 単結晶半導体膜の製造方法
JPS5961117A (ja) 半導体装置の製造方法
JPS62208620A (ja) 半導体装置の製造方法
JPH01132114A (ja) 単結晶薄膜の形成方法
JPH0243331B2 (enExample)

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term