JPS6382961U - - Google Patents
Info
- Publication number
- JPS6382961U JPS6382961U JP17681086U JP17681086U JPS6382961U JP S6382961 U JPS6382961 U JP S6382961U JP 17681086 U JP17681086 U JP 17681086U JP 17681086 U JP17681086 U JP 17681086U JP S6382961 U JPS6382961 U JP S6382961U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- laser
- flat plate
- support block
- laser device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 6
- 238000005219 brazing Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- 230000017525 heat dissipation Effects 0.000 description 1
Description
第１図は本考案の第１の実施例の半導体レーザ
装置の断面図、第２図は本考案の第２の実施例の
半導体レーザ装置の断面図、第３図は従来の半導
体レーザ装置の断面図である。
１……平面板、２……ロー材、３……レンズキ
ヤツプ、４……レーザ支持ブロツク、５……熱放
散片、６……レーザ素子、７……溝、８……凹部
。
FIG. 1 is a cross-sectional view of a semiconductor laser device according to a first embodiment of the present invention, FIG. 2 is a cross-sectional view of a semiconductor laser device according to a second embodiment of the present invention, and FIG. 3 is a cross-sectional view of a conventional semiconductor laser device. FIG. DESCRIPTION OF SYMBOLS 1... Flat plate, 2... Brazing material, 3... Lens cap, 4... Laser support block, 5... Heat dissipation piece, 6... Laser element, 7... Groove, 8... Recessed part.
Claims (1)
ステムの前記レーザ支持ブロツクに熱放散片を介
してレーザ素子を固着し、窓付きキヤツプによつ
て封止した半導体レーザ装置において、前記平面
板にロー材の流れ出しを防止する溝または凹部を
設けたことを特徴とする半導体レーザ装置。 In a semiconductor laser device in which a laser element is fixed to the laser support block of a stem with a laser support block soldered onto a flat plate through a heat dissipating piece and sealed with a window cap, a brazing material is attached to the flat plate. 1. A semiconductor laser device characterized in that a groove or a recess is provided to prevent the outflow of the semiconductor laser.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17681086U JPS6382961U (en) | 1986-11-17 | 1986-11-17 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17681086U JPS6382961U (en) | 1986-11-17 | 1986-11-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6382961U true JPS6382961U (en) | 1988-05-31 |
Family
ID=31117418
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17681086U Pending JPS6382961U (en) | 1986-11-17 | 1986-11-17 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6382961U (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6127337B2 (en) * | 1980-10-07 | 1986-06-25 | Ishizuka Glass |
-
1986
- 1986-11-17 JP JP17681086U patent/JPS6382961U/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6127337B2 (en) * | 1980-10-07 | 1986-06-25 | Ishizuka Glass |