JPS637025B2 - - Google Patents
Info
- Publication number
- JPS637025B2 JPS637025B2 JP53150117A JP15011778A JPS637025B2 JP S637025 B2 JPS637025 B2 JP S637025B2 JP 53150117 A JP53150117 A JP 53150117A JP 15011778 A JP15011778 A JP 15011778A JP S637025 B2 JPS637025 B2 JP S637025B2
- Authority
- JP
- Japan
- Prior art keywords
- heat treatment
- wafers
- wafer
- oxygen
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 36
- 239000001301 oxygen Substances 0.000 claims description 36
- 229910052760 oxygen Inorganic materials 0.000 claims description 36
- 238000010438 heat treatment Methods 0.000 claims description 31
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 18
- 229910052710 silicon Inorganic materials 0.000 claims description 18
- 239000010703 silicon Substances 0.000 claims description 18
- 239000013078 crystal Substances 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 235000012431 wafers Nutrition 0.000 description 46
- 239000012298 atmosphere Substances 0.000 description 11
- 230000007547 defect Effects 0.000 description 9
- 239000000463 material Substances 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
Landscapes
- Bipolar Transistors (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15011778A JPS5577170A (en) | 1978-12-06 | 1978-12-06 | Silicon mono-crystal wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15011778A JPS5577170A (en) | 1978-12-06 | 1978-12-06 | Silicon mono-crystal wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5577170A JPS5577170A (en) | 1980-06-10 |
| JPS637025B2 true JPS637025B2 (enrdf_load_stackoverflow) | 1988-02-15 |
Family
ID=15489851
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15011778A Granted JPS5577170A (en) | 1978-12-06 | 1978-12-06 | Silicon mono-crystal wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5577170A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2097695B (en) * | 1981-03-24 | 1984-08-22 | Mitsubishi Monsanto Chem | Method for producing a single crystal |
| JPS5856344A (ja) * | 1981-09-29 | 1983-04-04 | Fujitsu Ltd | 半導体装置の製造方法 |
-
1978
- 1978-12-06 JP JP15011778A patent/JPS5577170A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5577170A (en) | 1980-06-10 |