JPS6369794A - 気相エピタキシヤル成長装置 - Google Patents
気相エピタキシヤル成長装置Info
- Publication number
- JPS6369794A JPS6369794A JP21648886A JP21648886A JPS6369794A JP S6369794 A JPS6369794 A JP S6369794A JP 21648886 A JP21648886 A JP 21648886A JP 21648886 A JP21648886 A JP 21648886A JP S6369794 A JPS6369794 A JP S6369794A
- Authority
- JP
- Japan
- Prior art keywords
- pipe
- vapor phase
- tube
- reaction
- outer pipe
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000927 vapour-phase epitaxy Methods 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 238000006243 chemical reaction Methods 0.000 claims abstract description 14
- 239000012808 vapor phase Substances 0.000 claims description 13
- 239000013078 crystal Substances 0.000 claims description 2
- 238000005192 partition Methods 0.000 claims 1
- 238000001947 vapour-phase growth Methods 0.000 claims 1
- 239000000376 reactant Substances 0.000 abstract description 6
- 239000007795 chemical reaction product Substances 0.000 abstract description 4
- 230000008021 deposition Effects 0.000 abstract description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract description 3
- 238000012423 maintenance Methods 0.000 abstract description 3
- 229910000077 silane Inorganic materials 0.000 abstract description 3
- 239000010453 quartz Substances 0.000 abstract description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract description 2
- 229910010271 silicon carbide Inorganic materials 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 2
- 238000000151 deposition Methods 0.000 abstract 2
- 238000005406 washing Methods 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 28
- 239000010703 silicon Substances 0.000 description 28
- 229910052710 silicon Inorganic materials 0.000 description 28
- 239000007789 gas Substances 0.000 description 10
- 238000004140 cleaning Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 3
- 238000007086 side reaction Methods 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- -1 SiH2C12) Substances 0.000 description 1
- 241001655798 Taku Species 0.000 description 1
- 235000006732 Torreya nucifera Nutrition 0.000 description 1
- 244000111306 Torreya nucifera Species 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21648886A JPS6369794A (ja) | 1986-09-12 | 1986-09-12 | 気相エピタキシヤル成長装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21648886A JPS6369794A (ja) | 1986-09-12 | 1986-09-12 | 気相エピタキシヤル成長装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6369794A true JPS6369794A (ja) | 1988-03-29 |
| JPH0510318B2 JPH0510318B2 (enrdf_load_stackoverflow) | 1993-02-09 |
Family
ID=16689215
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21648886A Granted JPS6369794A (ja) | 1986-09-12 | 1986-09-12 | 気相エピタキシヤル成長装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6369794A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4991562A (en) * | 1988-09-28 | 1991-02-12 | Aisin Seiki Kabushiki Kaisha | Mechanical supercharger system |
| FR2655772A1 (fr) * | 1989-12-08 | 1991-06-14 | Thomson Composants Microondes | Dispositif antipollution pour bati vertical de depot en phase gazeuse. |
-
1986
- 1986-09-12 JP JP21648886A patent/JPS6369794A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4991562A (en) * | 1988-09-28 | 1991-02-12 | Aisin Seiki Kabushiki Kaisha | Mechanical supercharger system |
| FR2655772A1 (fr) * | 1989-12-08 | 1991-06-14 | Thomson Composants Microondes | Dispositif antipollution pour bati vertical de depot en phase gazeuse. |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0510318B2 (enrdf_load_stackoverflow) | 1993-02-09 |
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