JPS636846A - AlGaAs系基板のエツチング方法 - Google Patents
AlGaAs系基板のエツチング方法Info
- Publication number
- JPS636846A JPS636846A JP15041486A JP15041486A JPS636846A JP S636846 A JPS636846 A JP S636846A JP 15041486 A JP15041486 A JP 15041486A JP 15041486 A JP15041486 A JP 15041486A JP S636846 A JPS636846 A JP S636846A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- etchant
- algaas
- gaas
- ratio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005530 etching Methods 0.000 title claims abstract description 56
- 239000000758 substrate Substances 0.000 title claims description 16
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 20
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims abstract description 14
- 239000000203 mixture Substances 0.000 claims abstract description 12
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 claims abstract description 6
- 235000002906 tartaric acid Nutrition 0.000 claims abstract description 6
- 239000011975 tartaric acid Substances 0.000 claims abstract description 6
- 239000007864 aqueous solution Substances 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 5
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 claims 1
- 229910001868 water Inorganic materials 0.000 abstract description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 12
- 230000003247 decreasing effect Effects 0.000 abstract 5
- 230000007423 decrease Effects 0.000 description 5
- SWXQKHHHCFXQJF-UHFFFAOYSA-N azane;hydrogen peroxide Chemical compound [NH4+].[O-]O SWXQKHHHCFXQJF-UHFFFAOYSA-N 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- LRRBNLHPFPHVCW-UHFFFAOYSA-N 2,3-dihydroxybutanedioic acid;hydrogen peroxide Chemical group OO.OC(=O)C(O)C(O)C(O)=O LRRBNLHPFPHVCW-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000003643 water by type Substances 0.000 description 1
Landscapes
- Weting (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15041486A JPS636846A (ja) | 1986-06-26 | 1986-06-26 | AlGaAs系基板のエツチング方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15041486A JPS636846A (ja) | 1986-06-26 | 1986-06-26 | AlGaAs系基板のエツチング方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS636846A true JPS636846A (ja) | 1988-01-12 |
JPH0545058B2 JPH0545058B2 (enrdf_load_stackoverflow) | 1993-07-08 |
Family
ID=15496419
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15041486A Granted JPS636846A (ja) | 1986-06-26 | 1986-06-26 | AlGaAs系基板のエツチング方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS636846A (enrdf_load_stackoverflow) |
-
1986
- 1986-06-26 JP JP15041486A patent/JPS636846A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPH0545058B2 (enrdf_load_stackoverflow) | 1993-07-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4113551A (en) | Polycrystalline silicon etching with tetramethylammonium hydroxide | |
Wu et al. | Selective etching characteristics of HF for AlxGa1-xAs/GaAs | |
KR950701582A (ko) | 선택적인 식각을 사용하여 ⅲ족-ⅴ족 화합물의 반도체 장치를 제조하는 방법(method of fabricating group ⅲ-ⅴ compound semiconductor devices using selective etching) | |
EP0815585B1 (en) | Preferential etch of semiconductor substrate with respect to epitaxial layers | |
JPS636846A (ja) | AlGaAs系基板のエツチング方法 | |
JP3373717B2 (ja) | シリコンの異方性エッチング液およびシリコンの異方性エッチング方法 | |
JP4382489B2 (ja) | 半導体装置の製造方法、およびエッチング方法 | |
FR2196604A5 (enrdf_load_stackoverflow) | ||
JP3045912B2 (ja) | AlGaAs半導体層のエッチング方法 | |
JPS6329518A (ja) | GaAs系基板のエツチング方法 | |
JPH01316471A (ja) | エッチング液 | |
JPH01310543A (ja) | エッチング液 | |
US5114532A (en) | Process of etching iron-silicon-aluminum trialloys and etchant solutions used therefor | |
PL122282B1 (en) | Mask for selective etching of aiii downwards bv downwards compound | |
JPH065584A (ja) | 化合物半導体の化学的エッチング方法 | |
JPS6369288A (ja) | 半導体レ−ザ装置の製造方法 | |
JPH0554259B2 (enrdf_load_stackoverflow) | ||
JPS6214033B2 (enrdf_load_stackoverflow) | ||
JP2001044169A (ja) | 半導体のエッチング液、調製方法及びエッチング方法 | |
JPH0415616B2 (enrdf_load_stackoverflow) | ||
NL7010220A (en) | Epitaxial single crystal film | |
JPS63258023A (ja) | 半導体装置の製造方法 | |
JPH0298946A (ja) | 電界効果トランジスタの製造方法 | |
JPS59190366A (ja) | 3−v族化合物結晶用化学エツチング液 | |
JPS55128822A (en) | Method of epitaxial growth at liquid phase |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term |