JPH0545058B2 - - Google Patents
Info
- Publication number
- JPH0545058B2 JPH0545058B2 JP15041486A JP15041486A JPH0545058B2 JP H0545058 B2 JPH0545058 B2 JP H0545058B2 JP 15041486 A JP15041486 A JP 15041486A JP 15041486 A JP15041486 A JP 15041486A JP H0545058 B2 JPH0545058 B2 JP H0545058B2
- Authority
- JP
- Japan
- Prior art keywords
- etching
- layer
- gaas
- algaas
- etchant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000005530 etching Methods 0.000 claims description 52
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 29
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 17
- 239000000203 mixture Substances 0.000 claims description 9
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 5
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 claims description 5
- 235000002906 tartaric acid Nutrition 0.000 claims description 5
- 239000011975 tartaric acid Substances 0.000 claims description 5
- 239000007864 aqueous solution Substances 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- 230000007423 decrease Effects 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- SWXQKHHHCFXQJF-UHFFFAOYSA-N azane;hydrogen peroxide Chemical class [NH4+].[O-]O SWXQKHHHCFXQJF-UHFFFAOYSA-N 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- LRRBNLHPFPHVCW-UHFFFAOYSA-N 2,3-dihydroxybutanedioic acid;hydrogen peroxide Chemical group OO.OC(=O)C(O)C(O)C(O)=O LRRBNLHPFPHVCW-UHFFFAOYSA-N 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Landscapes
- Weting (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15041486A JPS636846A (ja) | 1986-06-26 | 1986-06-26 | ＡｌＧａＡｓ系基板のエツチング方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15041486A JPS636846A (ja) | 1986-06-26 | 1986-06-26 | ＡｌＧａＡｓ系基板のエツチング方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS636846A JPS636846A (ja) | 1988-01-12 |
| JPH0545058B2 true JPH0545058B2 (enrdf_load_stackoverflow) | 1993-07-08 |
Family
ID=15496419
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15041486A Granted JPS636846A (ja) | 1986-06-26 | 1986-06-26 | ＡｌＧａＡｓ系基板のエツチング方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS636846A (enrdf_load_stackoverflow) |
-
1986
- 1986-06-26 JP JP15041486A patent/JPS636846A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS636846A (ja) | 1988-01-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4113551A (en) | Polycrystalline silicon etching with tetramethylammonium hydroxide | |
| Wu et al. | Selective etching characteristics of HF for AlxGa1-xAs/GaAs | |
| GB1398019A (en) | Process for preparing semiconductor | |
| EP0815585B1 (en) | Preferential etch of semiconductor substrate with respect to epitaxial layers | |
| JPH07503583A (ja) | 選択的エッチングを用いた３−ｖ族化合物半導体デバイスの製造方法 | |
| JPH0545058B2 (enrdf_load_stackoverflow) | ||
| US3272748A (en) | Etching of silicon and germanium | |
| EP0209194B1 (en) | Method of manufacturing a semiconductor device, in which a layer of gallium arsenide is etched in a basic solution of hydrogen peroxide | |
| KR970008397A (ko) | 식각용액 및 이를 이용한 반도체 장치의 식각방법 | |
| JPS5855323A (ja) | シリコン及びシリコン酸化膜の腐食液 | |
| JP4382489B2 (ja) | 半導体装置の製造方法、およびエッチング方法 | |
| JPS6366414B2 (enrdf_load_stackoverflow) | ||
| JPS6223191A (ja) | リツジ型半導体レ−ザ装置の製造方法 | |
| JPH01310543A (ja) | エッチング液 | |
| JPS6329518A (ja) | ＧａＡｓ系基板のエツチング方法 | |
| JP3389658B2 (ja) | エピタキシャル結晶積層構造の選択エッチング方法および膜厚測定方法 | |
| JP4501127B2 (ja) | 化合物半導体層の評価用サンプル作製方法 | |
| JPH0137360B2 (enrdf_load_stackoverflow) | ||
| JPS62207887A (ja) | 砒化インジウムアルミニウムのエツチング液 | |
| JPH01316471A (ja) | エッチング液 | |
| JPS5816074A (ja) | 金または金合金膜のエツチング方法 | |
| KR100196523B1 (ko) | 반도체 소자 제조방법 | |
| JPH065584A (ja) | 化合物半導体の化学的エッチング方法 | |
| JPH02155232A (ja) | エッチング方法 | |
| JPH0415616B2 (enrdf_load_stackoverflow) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |