JPS6367954U - - Google Patents
Info
- Publication number
- JPS6367954U JPS6367954U JP16277786U JP16277786U JPS6367954U JP S6367954 U JPS6367954 U JP S6367954U JP 16277786 U JP16277786 U JP 16277786U JP 16277786 U JP16277786 U JP 16277786U JP S6367954 U JPS6367954 U JP S6367954U
- Authority
- JP
- Japan
- Prior art keywords
- silicon diaphragm
- pedestal
- electrode
- bonded
- pressure sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical group C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Description
第１図は、本考案による半導体圧力センサーの
断面図であり、第２図は従来の半導体圧力センサ
ーの断面図である。第３図は、従来の半導体圧力
センサーの実装構造断面図であり、第４図は、本
考案による半導体圧力センサーの実装構造断面図
である。
１……遮光性物質層、２……台座、３……圧力
基準室、４……シリコンダイヤフラム、５……拡
散抵抗、６……電極、１０……保護カバー開口部
、１１……ゲル状物質、１２……保護カバー、１
３……接着層、１４……外枠、１５……入出力端
子、１６……パターン部、１７……導体パターン
、１８……ハンダ付部、１９……テープ基板。
FIG. 1 is a sectional view of a semiconductor pressure sensor according to the present invention, and FIG. 2 is a sectional view of a conventional semiconductor pressure sensor. FIG. 3 is a sectional view of the mounting structure of a conventional semiconductor pressure sensor, and FIG. 4 is a sectional view of the mounting structure of a semiconductor pressure sensor according to the present invention. DESCRIPTION OF SYMBOLS 1... Light-shielding material layer, 2... Pedestal, 3... Pressure reference chamber, 4... Silicon diaphragm, 5... Diffusion resistance, 6... Electrode, 10... Protective cover opening, 11... Gel-like Substance, 12... Protective cover, 1
3... Adhesive layer, 14... Outer frame, 15... Input/output terminal, 16... Pattern section, 17... Conductor pattern, 18... Soldering section, 19... Tape board.
Claims (1)
ンダイヤフラム中に形成された拡散抵坑と、前記
拡散抵抗上に形成された電極と、上記シリコンダ
イヤフラムの前記電極形成面とは反対の面上に接
合した台座から構成される半導体圧力センサーに
おいて、上記台座の上記シリコンダイヤフラム接
合面とは反対の面上に形成された遮光性物質層を
有することを特徴とする半導体圧力センサー。 Consisting of at least a silicon diaphragm, a diffused resistor formed in the silicon diaphragm, an electrode formed on the diffused resistor, and a pedestal bonded to a surface of the silicon diaphragm opposite to the surface on which the electrode is formed. 1. A semiconductor pressure sensor comprising: a light-shielding material layer formed on a surface of the pedestal opposite to the surface to which the silicon diaphragm is bonded.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16277786U JPS6367954U (en) | 1986-10-23 | 1986-10-23 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16277786U JPS6367954U (en) | 1986-10-23 | 1986-10-23 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6367954U true JPS6367954U (en) | 1988-05-07 |
Family
ID=31090365
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16277786U Pending JPS6367954U (en) | 1986-10-23 | 1986-10-23 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6367954U (en) |
-
1986
- 1986-10-23 JP JP16277786U patent/JPS6367954U/ja active Pending
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