JPS6367330B2 - - Google Patents
Info
- Publication number
- JPS6367330B2 JPS6367330B2 JP58133296A JP13329683A JPS6367330B2 JP S6367330 B2 JPS6367330 B2 JP S6367330B2 JP 58133296 A JP58133296 A JP 58133296A JP 13329683 A JP13329683 A JP 13329683A JP S6367330 B2 JPS6367330 B2 JP S6367330B2
- Authority
- JP
- Japan
- Prior art keywords
- hydrogen
- thin film
- silicon
- base material
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010409 thin film Substances 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 16
- 229910052739 hydrogen Inorganic materials 0.000 claims description 15
- 239000001257 hydrogen Substances 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 15
- 239000010703 silicon Substances 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 12
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 claims description 11
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 claims description 10
- -1 hydrogen ions Chemical class 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 8
- 238000001704 evaporation Methods 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- 230000005685 electric field effect Effects 0.000 claims description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 13
- 150000002500 ions Chemical class 0.000 description 9
- 239000007789 gas Substances 0.000 description 8
- 150000003376 silicon Chemical class 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 238000005566 electron beam evaporation Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 240000002989 Euphorbia neriifolia Species 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002003 electron diffraction Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 108091008695 photoreceptors Proteins 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052990 silicon hydride Inorganic materials 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58133296A JPS6025225A (ja) | 1983-07-20 | 1983-07-20 | 薄膜半導体の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58133296A JPS6025225A (ja) | 1983-07-20 | 1983-07-20 | 薄膜半導体の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6025225A JPS6025225A (ja) | 1985-02-08 |
| JPS6367330B2 true JPS6367330B2 (enrdf_load_html_response) | 1988-12-26 |
Family
ID=15101334
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58133296A Granted JPS6025225A (ja) | 1983-07-20 | 1983-07-20 | 薄膜半導体の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6025225A (enrdf_load_html_response) |
-
1983
- 1983-07-20 JP JP58133296A patent/JPS6025225A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6025225A (ja) | 1985-02-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4443488A (en) | Plasma ion deposition process | |
| US4927786A (en) | Process for the formation of a silicon-containing semiconductor thin film by chemically reacting active hydrogen atoms with liquefied film-forming raw material gas on the surface of a substrate | |
| JPH0794431A (ja) | アモルファス半導体用基板、該基板を有するアモルファス半導体基板、及び該アモルファス半導体基板の製造方法 | |
| US20100311229A1 (en) | Amorphous group iii-v semiconductor material and preparation thereof | |
| US4637869A (en) | Dual ion beam deposition of amorphous semiconductor films | |
| JPH0143449B2 (enrdf_load_html_response) | ||
| US4702965A (en) | Low vacuum silicon thin film solar cell and method of production | |
| JP3351679B2 (ja) | 多結晶シリコン薄膜積層体の製造方法及びシリコン薄膜太陽電池 | |
| JPS6367330B2 (enrdf_load_html_response) | ||
| US5501745A (en) | Low temperature method for making a photovoltaic material | |
| US4266984A (en) | Enhanced open circuit voltage in amorphous silicon photovoltaic devices | |
| JPH07106615A (ja) | 透明導電膜および光電変換半導体装置の製造方法 | |
| JPH079059B2 (ja) | 炭素薄膜の製造方法 | |
| JPH0131289B2 (enrdf_load_html_response) | ||
| JP3102540B2 (ja) | 低水素量非晶質シリコン半導体薄膜の形成方法 | |
| Khan et al. | Ion beam deposition of crystallographically aligned nano-crystalline silicon films | |
| JP2896247B2 (ja) | 光電変換素子 | |
| JPS61189625A (ja) | 堆積膜形成法 | |
| JPS639743B2 (enrdf_load_html_response) | ||
| Miryala | Deposition of Silicon Thin Films by Ion Beam Assisted Deposition | |
| JPH0113213B2 (enrdf_load_html_response) | ||
| JP3107424B2 (ja) | 光電変換素子 | |
| JPH026831B2 (enrdf_load_html_response) | ||
| JPS61179870A (ja) | 堆積膜形成法 | |
| JPS5837247B2 (ja) | アモルフアスシリコンの製造方法 |