JPS636627B2 - - Google Patents
Info
- Publication number
- JPS636627B2 JPS636627B2 JP6462385A JP6462385A JPS636627B2 JP S636627 B2 JPS636627 B2 JP S636627B2 JP 6462385 A JP6462385 A JP 6462385A JP 6462385 A JP6462385 A JP 6462385A JP S636627 B2 JPS636627 B2 JP S636627B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- heating
- phase growth
- vapor phase
- plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 120
- 238000010438 heat treatment Methods 0.000 claims description 100
- 239000010453 quartz Substances 0.000 claims description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 25
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 21
- 238000001947 vapour-phase growth Methods 0.000 claims description 20
- 229910052799 carbon Inorganic materials 0.000 claims description 19
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 239000012071 phase Substances 0.000 claims 3
- 239000007789 gas Substances 0.000 description 12
- 238000009826 distribution Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 6
- 239000012495 reaction gas Substances 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 238000010926 purge Methods 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000002470 thermal conductor Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6462385A JPS61223184A (ja) | 1985-03-28 | 1985-03-28 | 気相成長装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6462385A JPS61223184A (ja) | 1985-03-28 | 1985-03-28 | 気相成長装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61223184A JPS61223184A (ja) | 1986-10-03 |
| JPS636627B2 true JPS636627B2 (enrdf_load_stackoverflow) | 1988-02-10 |
Family
ID=13263568
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6462385A Granted JPS61223184A (ja) | 1985-03-28 | 1985-03-28 | 気相成長装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61223184A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0765179B2 (ja) * | 1987-05-15 | 1995-07-12 | 日本電信電話株式会社 | 化学的気相成長方法 |
| CN117524930B (zh) * | 2023-11-07 | 2025-05-06 | 拓荆创益(沈阳)半导体设备有限公司 | 一种半导体腔室双加热盘的温度控制系统和方法 |
-
1985
- 1985-03-28 JP JP6462385A patent/JPS61223184A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61223184A (ja) | 1986-10-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6301434B1 (en) | Apparatus and method for CVD and thermal processing of semiconductor substrates | |
| US5527393A (en) | Vapor-phase deposition apparatus and vapor-phase deposition method | |
| CN104704626B (zh) | 用于快速热处理的最小接触边缘环 | |
| TWI703639B (zh) | 用於加熱半導體基板的燈具 | |
| JP3090339B2 (ja) | 気相成長装置および方法 | |
| WO2016174859A1 (ja) | サセプタ及びエピタキシャル成長装置 | |
| JPH0758041A (ja) | サセプタ | |
| JPS62500624A (ja) | 半導体ウェ−ハ処理のためのリアクタ−装置 | |
| JP2010147350A (ja) | エピタキシャルウェーハの製造方法及び製造装置 | |
| JPH0845863A (ja) | 半導体基板の枚葉式熱処理装置 | |
| CN110797291A (zh) | 用于使预热构件自定中心的装置 | |
| TW201833381A (zh) | 用於半導體處理腔室的吸收反射體 | |
| JP3206375B2 (ja) | 単結晶薄膜の製造方法 | |
| JPS60161616A (ja) | 半導体ウエハの赤外線加熱装置 | |
| JP3383784B2 (ja) | 半導体ウェハの熱処理装置 | |
| JPS636627B2 (enrdf_load_stackoverflow) | ||
| JPH07245264A (ja) | 気相成長装置 | |
| JPS60189927A (ja) | 気相反応容器 | |
| JPH0268922A (ja) | 気相成長用サセプタ | |
| JPH03246931A (ja) | サセプタ | |
| JPS60152675A (ja) | 縦型拡散炉型気相成長装置 | |
| JPH04713A (ja) | 基板の加熱装置 | |
| JPH0736386B2 (ja) | 気相成長装置 | |
| JPS60247934A (ja) | 熱処理装置 | |
| JPH02186623A (ja) | サセプタ |