JPS61223184A - 気相成長装置 - Google Patents

気相成長装置

Info

Publication number
JPS61223184A
JPS61223184A JP6462385A JP6462385A JPS61223184A JP S61223184 A JPS61223184 A JP S61223184A JP 6462385 A JP6462385 A JP 6462385A JP 6462385 A JP6462385 A JP 6462385A JP S61223184 A JPS61223184 A JP S61223184A
Authority
JP
Japan
Prior art keywords
substrate
heating
vapor phase
phase growth
substrates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6462385A
Other languages
English (en)
Japanese (ja)
Other versions
JPS636627B2 (enrdf_load_stackoverflow
Inventor
Kichizo Komiyama
吉三 小宮山
Taisan Goto
後藤　泰山
Hiroshi Iga
伊賀　寛
Takehiko Kobayashi
毅彦 小林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shibaura Machine Co Ltd
Original Assignee
Toshiba Machine Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Machine Co Ltd filed Critical Toshiba Machine Co Ltd
Priority to JP6462385A priority Critical patent/JPS61223184A/ja
Publication of JPS61223184A publication Critical patent/JPS61223184A/ja
Publication of JPS636627B2 publication Critical patent/JPS636627B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Chemical Vapour Deposition (AREA)
JP6462385A 1985-03-28 1985-03-28 気相成長装置 Granted JPS61223184A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6462385A JPS61223184A (ja) 1985-03-28 1985-03-28 気相成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6462385A JPS61223184A (ja) 1985-03-28 1985-03-28 気相成長装置

Publications (2)

Publication Number Publication Date
JPS61223184A true JPS61223184A (ja) 1986-10-03
JPS636627B2 JPS636627B2 (enrdf_load_stackoverflow) 1988-02-10

Family

ID=13263568

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6462385A Granted JPS61223184A (ja) 1985-03-28 1985-03-28 気相成長装置

Country Status (1)

Country Link
JP (1) JPS61223184A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63282274A (ja) * 1987-05-15 1988-11-18 Nippon Telegr & Teleph Corp <Ntt> 化学的気相成長装置およびその使用方法
CN117524930A (zh) * 2023-11-07 2024-02-06 拓荆创益(沈阳)半导体设备有限公司 一种半导体腔室双加热盘的温度控制系统和方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63282274A (ja) * 1987-05-15 1988-11-18 Nippon Telegr & Teleph Corp <Ntt> 化学的気相成長装置およびその使用方法
CN117524930A (zh) * 2023-11-07 2024-02-06 拓荆创益(沈阳)半导体设备有限公司 一种半导体腔室双加热盘的温度控制系统和方法

Also Published As

Publication number Publication date
JPS636627B2 (enrdf_load_stackoverflow) 1988-02-10

Similar Documents

Publication Publication Date Title
US6301434B1 (en) Apparatus and method for CVD and thermal processing of semiconductor substrates
US6818864B2 (en) LED heat lamp arrays for CVD heating
TWI512884B (zh) 改良的邊緣環的周緣
JP6424726B2 (ja) サセプタ及びエピタキシャル成長装置
JPS6312128A (ja) バレル型気相成長装置
JP3090339B2 (ja) 気相成長装置および方法
US20190110336A1 (en) Lamp infrared radiation profile control by lamp filament design and positioning
JP2010147350A (ja) エピタキシャルウェーハの製造方法及び製造装置
JPH0845863A (ja) 半導体基板の枚葉式熱処理装置
JP4599816B2 (ja) シリコンエピタキシャルウェーハの製造方法
JP3206375B2 (ja) 単結晶薄膜の製造方法
JPS61223184A (ja) 気相成長装置
JPH0864544A (ja) 気相成長方法
JP4003899B2 (ja) 回転式気相薄膜成長装置
JPH07245264A (ja) 気相成長装置
JPH0722342A (ja) 気相成長装置
JP3056781B2 (ja) 気相成長装置
JPH0338029A (ja) 気相成長装置
US6091889A (en) Rapid thermal processor for heating a substrate
JPS5932123A (ja) 気相成長法
JPS60152675A (ja) 縦型拡散炉型気相成長装置
JPH0736386B2 (ja) 気相成長装置
JPH02186623A (ja) サセプタ
JPS61215291A (ja) 気相成長装置
JPS60247934A (ja) 熱処理装置