JPS6364905B2 - - Google Patents
Info
- Publication number
- JPS6364905B2 JPS6364905B2 JP56207845A JP20784581A JPS6364905B2 JP S6364905 B2 JPS6364905 B2 JP S6364905B2 JP 56207845 A JP56207845 A JP 56207845A JP 20784581 A JP20784581 A JP 20784581A JP S6364905 B2 JPS6364905 B2 JP S6364905B2
- Authority
- JP
- Japan
- Prior art keywords
- guard ring
- corner
- field plate
- width
- conductive layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/111—Field plates
- H10D64/112—Field plates comprising multiple field plate segments
Landscapes
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56207845A JPS58108771A (ja) | 1981-12-22 | 1981-12-22 | 半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56207845A JPS58108771A (ja) | 1981-12-22 | 1981-12-22 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58108771A JPS58108771A (ja) | 1983-06-28 |
| JPS6364905B2 true JPS6364905B2 (enrdf_load_stackoverflow) | 1988-12-14 |
Family
ID=16546474
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56207845A Granted JPS58108771A (ja) | 1981-12-22 | 1981-12-22 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58108771A (enrdf_load_stackoverflow) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60111462A (ja) * | 1983-11-21 | 1985-06-17 | Mitsubishi Electric Corp | プレ−ナ形半導体装置 |
| JPS62298171A (ja) * | 1986-06-17 | 1987-12-25 | Sanyo Electric Co Ltd | 半導体装置 |
| US5731606A (en) * | 1995-05-31 | 1998-03-24 | Shrivastava; Ritu | Reliable edge cell array design |
| CN101345254A (zh) | 2007-07-12 | 2009-01-14 | 富士电机电子技术株式会社 | 半导体器件 |
| JP6146097B2 (ja) * | 2013-04-04 | 2017-06-14 | 三菱電機株式会社 | 半導体装置 |
| JP6179468B2 (ja) * | 2014-06-23 | 2017-08-16 | トヨタ自動車株式会社 | 半導体装置 |
| CN112635566A (zh) * | 2020-12-28 | 2021-04-09 | 捷捷微电(无锡)科技有限公司 | 一种mosfet器件的终端结构 |
-
1981
- 1981-12-22 JP JP56207845A patent/JPS58108771A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58108771A (ja) | 1983-06-28 |
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