JPS6156628B2 - - Google Patents
Info
- Publication number
- JPS6156628B2 JPS6156628B2 JP13757980A JP13757980A JPS6156628B2 JP S6156628 B2 JPS6156628 B2 JP S6156628B2 JP 13757980 A JP13757980 A JP 13757980A JP 13757980 A JP13757980 A JP 13757980A JP S6156628 B2 JPS6156628 B2 JP S6156628B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode plate
- gate electrode
- gate
- gto
- cathode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
- H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/60—Gate-turn-off devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Thyristors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13757980A JPS5762562A (en) | 1980-10-03 | 1980-10-03 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13757980A JPS5762562A (en) | 1980-10-03 | 1980-10-03 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5762562A JPS5762562A (en) | 1982-04-15 |
JPS6156628B2 true JPS6156628B2 (enrdf_load_stackoverflow) | 1986-12-03 |
Family
ID=15202014
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13757980A Granted JPS5762562A (en) | 1980-10-03 | 1980-10-03 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5762562A (enrdf_load_stackoverflow) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5986260A (ja) * | 1982-11-10 | 1984-05-18 | Hitachi Ltd | ゲ−トタ−ンオフサイリスタ |
JPS604260A (ja) * | 1983-06-22 | 1985-01-10 | Hitachi Ltd | 半導体装置 |
JPS60150670A (ja) * | 1984-01-17 | 1985-08-08 | Mitsubishi Electric Corp | 半導体装置 |
JPS60194565A (ja) * | 1984-03-15 | 1985-10-03 | Mitsubishi Electric Corp | 半導体装置 |
JPS61189668A (ja) * | 1985-02-19 | 1986-08-23 | Mitsubishi Electric Corp | 半導体装置 |
JPS61208873A (ja) * | 1985-03-13 | 1986-09-17 | Res Dev Corp Of Japan | 圧接構造型両面ゲ−ト静電誘導サイリスタ |
JPS61212065A (ja) * | 1985-03-18 | 1986-09-20 | Hitachi Ltd | 半導体スイツチング装置 |
JPH0719784B2 (ja) * | 1985-10-02 | 1995-03-06 | 株式会社日立製作所 | 平形半導体装置 |
JPH0666463B2 (ja) * | 1986-08-18 | 1994-08-24 | 三菱電機株式会社 | ゲ−トタ−ンオフサイリスタ装置 |
JP4947702B2 (ja) * | 2006-10-10 | 2012-06-06 | 日本インター株式会社 | 圧接型大電力用サイリスタモジュール |
-
1980
- 1980-10-03 JP JP13757980A patent/JPS5762562A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5762562A (en) | 1982-04-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS6358376B2 (enrdf_load_stackoverflow) | ||
US4127863A (en) | Gate turn-off type thyristor with separate semiconductor resistive wafer providing emitter ballast | |
US4786959A (en) | Gate turn-off thyristor | |
US4161740A (en) | High frequency power transistor having reduced interconnection inductance and thermal resistance | |
US4626888A (en) | Gate turn-off thyristor | |
JPS6156628B2 (enrdf_load_stackoverflow) | ||
US3622845A (en) | Scr with amplified emitter gate | |
EP0064231B1 (en) | Compression-type semiconductor device | |
US5021855A (en) | Gate turn-off thyristor | |
US5198882A (en) | Crimp-type power semiconductor device | |
JP3714954B2 (ja) | 高電圧ブレークオーバダイオード | |
JPS6353702B2 (enrdf_load_stackoverflow) | ||
US4884126A (en) | Semiconductor device having parallel-connected, self turn-off type semiconductor elements | |
JPS6154262B2 (enrdf_load_stackoverflow) | ||
US3325706A (en) | Power transistor | |
JPH061831B2 (ja) | ゲ−トタ−ンオフサイリスタ | |
US4009059A (en) | Reverse conducting thyristor and process for producing the same | |
JPH0220849Y2 (enrdf_load_stackoverflow) | ||
JPS6364907B2 (enrdf_load_stackoverflow) | ||
US3739242A (en) | Triac | |
EP0145033B1 (en) | Semiconductor device having an interdigital electrode configuration and its manufacture | |
US4380114A (en) | Method of making a semiconductor switching device | |
JPH0666411B2 (ja) | 平形半導体装置 | |
US3659334A (en) | High power high frequency device | |
US3694708A (en) | Contact arrangement for emitter zone of semiconductor device |