JPS6364894B2 - - Google Patents
Info
- Publication number
- JPS6364894B2 JPS6364894B2 JP56175203A JP17520381A JPS6364894B2 JP S6364894 B2 JPS6364894 B2 JP S6364894B2 JP 56175203 A JP56175203 A JP 56175203A JP 17520381 A JP17520381 A JP 17520381A JP S6364894 B2 JPS6364894 B2 JP S6364894B2
- Authority
- JP
- Japan
- Prior art keywords
- target
- plasma
- present
- sputtering
- processing chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004544 sputter deposition Methods 0.000 claims description 16
- 239000004065 semiconductor Substances 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 239000010408 film Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/354—Introduction of auxiliary energy into the plasma
- C23C14/357—Microwaves, e.g. electron cyclotron resonance enhanced sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17520381A JPS5875839A (ja) | 1981-10-30 | 1981-10-30 | スパツタ装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17520381A JPS5875839A (ja) | 1981-10-30 | 1981-10-30 | スパツタ装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5875839A JPS5875839A (ja) | 1983-05-07 |
| JPS6364894B2 true JPS6364894B2 (ru) | 1988-12-14 |
Family
ID=15992089
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17520381A Granted JPS5875839A (ja) | 1981-10-30 | 1981-10-30 | スパツタ装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5875839A (ru) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0627323B2 (ja) * | 1983-12-26 | 1994-04-13 | 株式会社日立製作所 | スパツタリング方法及びその装置 |
| JPS61104074A (ja) * | 1984-10-26 | 1986-05-22 | Hitachi Ltd | スパッタリング方法及びその装置 |
| JPH0627324B2 (ja) * | 1984-08-31 | 1994-04-13 | 株式会社日立製作所 | プラズマ処理方法及びその装置 |
| JPS61127862A (ja) * | 1984-11-28 | 1986-06-16 | Hitachi Ltd | 薄膜形成方法及びその形成装置 |
| JPS61279674A (ja) * | 1985-06-05 | 1986-12-10 | Osaka Shinku Kiki Seisakusho:Kk | スパツタ装置 |
| JPH0621352B2 (ja) * | 1985-12-25 | 1994-03-23 | 株式会社日立製作所 | スパツタリング装置 |
| JPS62250168A (ja) * | 1986-04-23 | 1987-10-31 | Hitachi Ltd | マイクロ波プラズマ成膜装置 |
| JPS62287072A (ja) * | 1986-06-06 | 1987-12-12 | Matsushita Electric Ind Co Ltd | 薄膜形成装置 |
| ATE147890T1 (de) * | 1991-05-31 | 1997-02-15 | Deposition Sciences Inc | Sputteranlage |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS509545A (ru) * | 1973-05-31 | 1975-01-31 | ||
| JPS5132268A (ru) * | 1974-09-13 | 1976-03-18 | Hitachi Ltd | |
| JPS52126174A (en) * | 1976-04-15 | 1977-10-22 | Hitachi Ltd | Microwave discharge device |
| JPS52126175A (en) * | 1976-04-15 | 1977-10-22 | Hitachi Ltd | Etching device |
| JPS5319319A (en) * | 1976-08-09 | 1978-02-22 | Kitagawa Iron Works Co | Method of treating residual readyymixed concrete |
| JPS5344795A (en) * | 1976-10-05 | 1978-04-21 | Toshiba Corp | Fuel assembly |
| JPS54113241A (en) * | 1978-02-24 | 1979-09-04 | Hitachi Ltd | Magnetron |
-
1981
- 1981-10-30 JP JP17520381A patent/JPS5875839A/ja active Granted
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS509545A (ru) * | 1973-05-31 | 1975-01-31 | ||
| JPS5132268A (ru) * | 1974-09-13 | 1976-03-18 | Hitachi Ltd | |
| JPS52126174A (en) * | 1976-04-15 | 1977-10-22 | Hitachi Ltd | Microwave discharge device |
| JPS52126175A (en) * | 1976-04-15 | 1977-10-22 | Hitachi Ltd | Etching device |
| JPS5319319A (en) * | 1976-08-09 | 1978-02-22 | Kitagawa Iron Works Co | Method of treating residual readyymixed concrete |
| JPS5344795A (en) * | 1976-10-05 | 1978-04-21 | Toshiba Corp | Fuel assembly |
| JPS54113241A (en) * | 1978-02-24 | 1979-09-04 | Hitachi Ltd | Magnetron |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5875839A (ja) | 1983-05-07 |
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