JPS6364771B2 - - Google Patents

Info

Publication number
JPS6364771B2
JPS6364771B2 JP56027481A JP2748181A JPS6364771B2 JP S6364771 B2 JPS6364771 B2 JP S6364771B2 JP 56027481 A JP56027481 A JP 56027481A JP 2748181 A JP2748181 A JP 2748181A JP S6364771 B2 JPS6364771 B2 JP S6364771B2
Authority
JP
Japan
Prior art keywords
resist
layer
resist layer
forming
positive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56027481A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57141641A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP56027481A priority Critical patent/JPS57141641A/ja
Publication of JPS57141641A publication Critical patent/JPS57141641A/ja
Publication of JPS6364771B2 publication Critical patent/JPS6364771B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP56027481A 1981-02-26 1981-02-26 Formation of positive pattern Granted JPS57141641A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56027481A JPS57141641A (en) 1981-02-26 1981-02-26 Formation of positive pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56027481A JPS57141641A (en) 1981-02-26 1981-02-26 Formation of positive pattern

Publications (2)

Publication Number Publication Date
JPS57141641A JPS57141641A (en) 1982-09-02
JPS6364771B2 true JPS6364771B2 (enExample) 1988-12-13

Family

ID=12222308

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56027481A Granted JPS57141641A (en) 1981-02-26 1981-02-26 Formation of positive pattern

Country Status (1)

Country Link
JP (1) JPS57141641A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5965430A (ja) * 1982-10-06 1984-04-13 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPS62502071A (ja) * 1985-03-07 1987-08-13 ヒュ−ズ・エアクラフト・カンパニ− イオンビ−ムと電子ビ−ムリソグラフイのためのポリシロキサンレジスト

Also Published As

Publication number Publication date
JPS57141641A (en) 1982-09-02

Similar Documents

Publication Publication Date Title
US4808511A (en) Vapor phase photoresist silylation process
JP4336310B2 (ja) ハードマスク層としてのシリコン含有反射防止層及びその形成方法
MacDonald et al. Advances in the design of organic resist materials
US4405708A (en) Method of applying a resist pattern on a substrate, and resist material mixture
US4481279A (en) Dry-developing resist composition
WO2003050613A2 (en) Method and apparatus for modification of chemically amplified photoresist by electron beam exposure
JP2003195521A (ja) フォトレジストパターンの形成方法及び半導体素子
JPS60115222A (ja) 微細パタ−ン形成方法
WO1985005470A1 (en) Bilevel resist
US5856071A (en) Resist material including si-containing resist having acid removable group combined with photo-acid generator
JP2707785B2 (ja) レジスト組成物およびパターン形成方法
US5079131A (en) Method of forming positive images through organometallic treatment of negative acid hardening cross-linked photoresist formulations
US4701342A (en) Negative resist with oxygen plasma resistance
JP2901044B2 (ja) 三層レジスト法によるパターン形成方法
JPS60254035A (ja) パタ−ン形成方法
JPS63292128A (ja) シリル化ポリ（ビニル）フェノールフォトレジスト
JPS58207041A (ja) 放射線感応性高分子レジスト
JPH08193167A (ja) 感光性樹脂組成物
JPS6364772B2 (enExample)
JPS6098431A (ja) パタン形成材料及びパタン形成方法
JPS60260946A (ja) パタ−ン形成用材料及びパタ−ン形成方法
JPS61289345A (ja) リソグラフイ用レジスト
EP0334906B1 (en) Silicon-containing negative resist material, and process for its use in patterning substrates
JPH05265210A (ja) レジスト組成物及びそれを用いるパターン形成方法
JPS59121042A (ja) ネガ型レジスト組成物