JPS6364771B2 - - Google Patents

Info

Publication number
JPS6364771B2
JPS6364771B2 JP56027481A JP2748181A JPS6364771B2 JP S6364771 B2 JPS6364771 B2 JP S6364771B2 JP 56027481 A JP56027481 A JP 56027481A JP 2748181 A JP2748181 A JP 2748181A JP S6364771 B2 JPS6364771 B2 JP S6364771B2
Authority
JP
Japan
Prior art keywords
resist
layer
resist layer
forming
positive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56027481A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57141641A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP56027481A priority Critical patent/JPS57141641A/ja
Publication of JPS57141641A publication Critical patent/JPS57141641A/ja
Publication of JPS6364771B2 publication Critical patent/JPS6364771B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/075Silicon-containing compounds
    • G03F7/0757Macromolecular compounds containing Si-O, Si-C or Si-N bonds

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP56027481A 1981-02-26 1981-02-26 Formation of positive pattern Granted JPS57141641A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56027481A JPS57141641A (en) 1981-02-26 1981-02-26 Formation of positive pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56027481A JPS57141641A (en) 1981-02-26 1981-02-26 Formation of positive pattern

Publications (2)

Publication Number Publication Date
JPS57141641A JPS57141641A (en) 1982-09-02
JPS6364771B2 true JPS6364771B2 (de) 1988-12-13

Family

ID=12222308

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56027481A Granted JPS57141641A (en) 1981-02-26 1981-02-26 Formation of positive pattern

Country Status (1)

Country Link
JP (1) JPS57141641A (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5965430A (ja) * 1982-10-06 1984-04-13 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
KR900002364B1 (ko) * 1984-05-30 1990-04-12 후지쓰가부시끼가이샤 패턴 형성재의 제조방법
WO1986005284A1 (en) * 1985-03-07 1986-09-12 Hughes Aircraft Company Polysiloxane resist for ion beam and electron beam lithography

Also Published As

Publication number Publication date
JPS57141641A (en) 1982-09-02

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