JPS6361771B2 - - Google Patents

Info

Publication number
JPS6361771B2
JPS6361771B2 JP58163048A JP16304883A JPS6361771B2 JP S6361771 B2 JPS6361771 B2 JP S6361771B2 JP 58163048 A JP58163048 A JP 58163048A JP 16304883 A JP16304883 A JP 16304883A JP S6361771 B2 JPS6361771 B2 JP S6361771B2
Authority
JP
Japan
Prior art keywords
sio
chlorine
gas
insulating film
fluorine
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58163048A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59218735A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP58163048A priority Critical patent/JPS59218735A/ja
Publication of JPS59218735A publication Critical patent/JPS59218735A/ja
Publication of JPS6361771B2 publication Critical patent/JPS6361771B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials

Landscapes

  • Formation Of Insulating Films (AREA)
JP58163048A 1983-09-05 1983-09-05 絶縁膜および絶縁膜−半導体界面の製造方法 Granted JPS59218735A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58163048A JPS59218735A (ja) 1983-09-05 1983-09-05 絶縁膜および絶縁膜−半導体界面の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58163048A JPS59218735A (ja) 1983-09-05 1983-09-05 絶縁膜および絶縁膜−半導体界面の製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP13892379A Division JPS5662328A (en) 1979-10-26 1979-10-26 Manufacturing of insulation membrane and insulation membrane-semiconductor interface

Publications (2)

Publication Number Publication Date
JPS59218735A JPS59218735A (ja) 1984-12-10
JPS6361771B2 true JPS6361771B2 (online.php) 1988-11-30

Family

ID=15766184

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58163048A Granted JPS59218735A (ja) 1983-09-05 1983-09-05 絶縁膜および絶縁膜−半導体界面の製造方法

Country Status (1)

Country Link
JP (1) JPS59218735A (online.php)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6352941B1 (en) * 1998-08-26 2002-03-05 Texas Instruments Incorporated Controllable oxidation technique for high quality ultrathin gate oxide formation

Also Published As

Publication number Publication date
JPS59218735A (ja) 1984-12-10

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