JPS6361387B2 - - Google Patents
Info
- Publication number
- JPS6361387B2 JPS6361387B2 JP58102757A JP10275783A JPS6361387B2 JP S6361387 B2 JPS6361387 B2 JP S6361387B2 JP 58102757 A JP58102757 A JP 58102757A JP 10275783 A JP10275783 A JP 10275783A JP S6361387 B2 JPS6361387 B2 JP S6361387B2
- Authority
- JP
- Japan
- Prior art keywords
- target
- substrate
- electrode
- film
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 52
- 238000004544 sputter deposition Methods 0.000 claims description 16
- 239000010409 thin film Substances 0.000 claims description 13
- 150000002500 ions Chemical class 0.000 claims description 3
- 239000010408 film Substances 0.000 description 34
- 239000000203 mixture Substances 0.000 description 15
- 238000009826 distribution Methods 0.000 description 12
- 238000010586 diagram Methods 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000000470 constituent Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/225—Oblique incidence of vaporised material on substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10275783A JPS59229480A (ja) | 1983-06-10 | 1983-06-10 | スパツタリング装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10275783A JPS59229480A (ja) | 1983-06-10 | 1983-06-10 | スパツタリング装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59229480A JPS59229480A (ja) | 1984-12-22 |
JPS6361387B2 true JPS6361387B2 (ko) | 1988-11-29 |
Family
ID=14336072
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10275783A Granted JPS59229480A (ja) | 1983-06-10 | 1983-06-10 | スパツタリング装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59229480A (ko) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2607727Y2 (ja) * | 1992-01-29 | 2002-07-08 | バルツァース ウント ライボルト ドイチュラント ホールディング アクチエンゲゼルシャフト | カソードスパッタリング装置 |
JPH05287524A (ja) * | 1992-04-09 | 1993-11-02 | Anelva Corp | マグネトロンスパッタリング用ターゲット |
EP0704878A1 (en) * | 1994-09-27 | 1996-04-03 | Applied Materials, Inc. | Uniform film thickness deposition of sputtered materials |
JP5026631B2 (ja) * | 1999-06-24 | 2012-09-12 | 株式会社アルバック | スパッタリング装置 |
US6267851B1 (en) * | 1999-10-28 | 2001-07-31 | Applied Komatsu Technology, Inc. | Tilted sputtering target with shield to block contaminants |
JP5916980B2 (ja) * | 2009-09-11 | 2016-05-11 | シャープ株式会社 | 窒化物半導体発光ダイオード素子の製造方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5776185A (en) * | 1980-10-30 | 1982-05-13 | Ulvac Corp | Sputtering device |
JPS57141930A (en) * | 1981-02-27 | 1982-09-02 | Hitachi Ltd | Device for formation of thin film |
-
1983
- 1983-06-10 JP JP10275783A patent/JPS59229480A/ja active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5776185A (en) * | 1980-10-30 | 1982-05-13 | Ulvac Corp | Sputtering device |
JPS57141930A (en) * | 1981-02-27 | 1982-09-02 | Hitachi Ltd | Device for formation of thin film |
Also Published As
Publication number | Publication date |
---|---|
JPS59229480A (ja) | 1984-12-22 |
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